IXGT2N250

Advance Technical Information High Voltage IGBTs for Capacitor Discharge Applications IXGH2N250 IXGT2N250 VCES = 2500V IC110 = 2A VCE(sat) ≤ 3.1V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 5.5 2.0 13.5 A A A SSOA VGE = 15V, TVJ = 125°C, RG = 50Ω ICM = 6 A (RBSOA) Clamped Inductive Load VCE ≤ 2000 V PC TC = 25°C 32 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 4 g g TJ TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 G V C C (TAB) E TO-268 (IXGT) G E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z z Optimized for Low Conduction and Switching Losses International Standard Packages Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 2500 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = IC110, VGE = 15V, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved z V TJ = 125°C TJ = 125°C z 2.6 3.1 5.5 V 10 100 μA μA ±100 nA 3.1 V V High Power Density Low Gate Drive Requirement Applications z z z Switched-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Capacitor Discharge Circuits DS100162(06/09) IXGH2N250 IXGT2N250 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = IC110, VCE = 10V, Note 1 0.7 Cies Coes Cres TO-247 (IXGH) Outline 1.2 S VCE = 25V, VGE = 0V, f = 1MHz 144 8.7 3.2 pF pF pF Qg Qge Qgc IC = IC110, VGE = 15V, VCE = 1000V 10.5 6.4 1.0 nC nC nC td(on) tr Resistive Switching times, TJ = 25°C 22 74 ns ns 70 100 ns ns 26 89 ns ns 74 204 ns ns 0.21 3.9 °C/W °C/W td(off) tf td(on) tr td(off) tf RthJC RthCK IC = IC110, VGE = 15V VCE = 1800V, RG = 50Ω Resistive Switching times, TJ = 125°C IC = IC110, VGE = 15V VCE = 1800V, RG = 50Ω (TO-247) 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. TO-268 (IXGT) Outline ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH2N250 IXGT2N250 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 4.0 28 VGE = 25V 20V 15V 3.5 VGE = 25V 24 20 2.5 IC - Amperes IC - Amperes 3.0 10V 2.0 1.5 20V 16 15V 12 8 1.0 4 0.5 10V 5V 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 VCE - Volts 18 20 VGE = 15V VCE(sat) - Normalized IC - Amperes 16 1.8 3.0 10V 2.5 2.0 1.5 1.0 0.5 I 1.6 C = 4A 1.4 1.2 I C = 2A I C = 1A 1.0 0.8 5V 0.0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 VCE - Volts 25 50 75 100 125 150 11 12 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 8 6.0 TJ = 25ºC 5.5 7 5.0 TJ = - 40ºC 25ºC 125ºC 6 I C = 4A IC - Amperes 4.5 VCE - Volts 14 2.0 VGE = 25V 20V 15V 3.5 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 4.0 10 VCE - Volts 4.0 3.5 3.0 5 4 3 2A 2 2.5 1 2.0 1A 1.5 0 6 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 13 14 15 3 4 5 6 7 8 9 10 VGE - Volts IXYS REF: G_2N250(2P)6-17-09 IXGH2N250 IXGT2N250 Fig. 7. Transconductance Fig. 8. Gate Charge 16 2.0 1.8 VCE = 1000V 14 I C = 2A 1.2 I G = 1mA 12 TJ = - 40ºC 25ºC 125ºC 1.4 VGE - Volts g f s - Siemens 1.6 1.0 0.8 10 8 6 0.6 4 0.4 2 0.2 0.0 0 0 1 2 3 4 5 6 7 8 0 1 2 3 IC - Amperes 5 6 7 8 9 10 11 QG - NanoCoulombs Fig. 10. Capacitance Fig. 9. Reverse-Bias Safe Operating Area 1,000 4.5 f = 1 MHz 4.0 Capacitance - PicoFarads 3.5 IC - Amperes 4 3.0 2.5 2.0 1.5 1.0 TJ = 150ºC 0.5 RG = 50Ω dV / dt < 10V / ns 0.0 250 Cies 100 Coes 10 Cres 1 500 750 1000 1250 1500 1750 2000 2250 2500 0 5 10 15 20 25 30 35 40 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 10.00 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.1 1 IXGH2N250 IXGT2N250 Fig. 13. Resistive Turn-on Rise Time vs. Collector Current Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature 200 200 RG = 50Ω 180 VGE = 15V 160 VCE = 1800V 140 I C t r - Nanoseconds t r - Nanoseconds 160 RG = 50Ω 180 VGE = 15V = 4A 120 100 80 I 60 C = 2A VCE = 1800V 140 TJ = 125ºC 120 100 80 TJ = 25ºC 60 40 40 20 20 25 35 45 55 65 75 85 95 105 115 1.0 125 1.5 2.0 2.5 TJ - Degrees Centigrade 58 240 TJ = 125ºC, VGE = 15V 50 220 VCE = 1800V 46 42 I C = 4A, 2A 180 38 160 34 140 30 120 26 100 22 80 18 60 100 125 350 90 54 t d(on) - - - - 150 175 200 225 250 275 tf 300 t f - Nanoseconds tr 75 t d(off) - - - - VCE = 1800V 250 80 I C = 2A 200 75 150 70 100 65 I C = 4A 50 0 14 300 25 35 45 55 tf t d(off) - - - - 95 105 115 55 125 80 TJ = 125ºC TJ = 25ºC 70 10 60 2.5 3.0 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 3.5 4.0 220 450 tf 400 TJ = 125ºC, VGE = 15V 200 t d(off) - - - - 180 VCE = 1800V 350 160 I 300 C = 2A 140 250 120 200 100 I C = 4A 150 80 100 60 50 40 0 50 75 100 125 150 175 200 225 250 275 t d(off) - Nanoseconds 1,000 t d(off) - Nanoseconds VCE = 1800V t f - Nanoseconds RG = 50Ω, VGE = 15V t f - Nanoseconds 85 500 90 2.0 75 Fig. 17. Resistive Turn-off Switching Times vs. Gate Resistance 10,000 1.5 65 60 TJ - Degrees Centigrade Fig. 16. Resistive Turn-off Switching Times vs. Collector Current 1.0 85 RG = 50Ω, VGE = 15V RG - Ohms 100 4.0 t d(off) - Nanoseconds 260 t d(on) - Nanoseconds t r - Nanoseconds 280 50 3.5 Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance 200 3.0 IC - Amperes 20 300 RG - Ohms IXYS REF: G_2N250(2P)6-17-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.