IXGT32N120A3

IXGH32N120A3 IXGT32N120A3 GenX3TM 1200V IGBTs VCES = 1200V IC110 = 32A VCE(sat) ≤ 2.35V Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 75 32 230 A A A IA EAS TC = 25°C TC = 25°C 20 120 A mJ SSOA VGE = 15V, TJ = 125°C, RG = 20Ω ICM = 150 A (RBSOA) Clamped Inductive Load PC TC = 25°C VCE ≤ 0.8 • VCES TJ TJM Tstg 300 W -55 ... +150 150 -55 ... +150 °C °C °C TL 1.6mm (0.063in) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-247 TO-268 6.0 4.0 g g G E C (Tab) TO-247 (IXGH) G BVCES IC = 250μA, VGE = 0V 1200 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V z z V 50 μA 1 mA IGES VCE = 0V, VGE = ±20V ±100 nA VCE(sat) IC IC 2.35 = IC110, VGE = 15V, Note 1 = 400A, VGE = 30V, Note 1 © 2011 IXYS CORPORATION, All rights Reserved 11 Optimized for Low Conduction Losses International Standard Packages Advantages z z TJ = 125°C C = Collector Tab = Collector High Power Density Low Gate Drive Requirement Applications V 5.0 C (Tab) Features z Characteristic Values Min. Typ. Max. E G = Gate E = Emitter z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) C V V z z z z z z z z Power Inverters Capacitor Discharge UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS99608C(03/11) IXGH32N120A3 IXGT32N120A3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 50A, VCE = 10V, Note 1 14 IC(on) Cies Coes Cres 20 S VCE = 10V, VGE = 15V, Note 1 94 A VCE = 25V, VGE = 0V, f = 1MHz 2150 130 14 pF pF pF 89 nC 15 nC 34 nC 39 200 140 1240 ns ns ns ns 0.21 0.42 °C/W °C/W Qg IC = 50A, VGE = 15V, VCE = 0.5 • VCES Qge Qgc td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C VGE = 20V, VCE = 0.8 • VCES, IC = 100A RG = 10Ω (External) RthJC RthCK Note TO-247 1. TO-247 AD Outline Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 1 2 3 Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Terminals: 1 - Gate 3 - Emitter 2, 4 - Collector IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH32N120A3 IXGT32N120A3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 200 250 VGE = 30V 25V 20V 180 160 200 175 15V IC - Amperes IC - Amperes 140 120 100 80 10V 15V 150 125 100 60 75 40 50 20 25 0 10V 0 0 1 2 3 4 5 6 0 5 10 VCE - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 20 6 VGE = 30V 25V 20V 160 VGE = 15V 5 VCE(sat) - Normalized 180 140 15V 120 100 80 10V 60 40 I = 192A 3 I C = 96A I C = 32A 2 1 0 C 4 20 0 0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 125 150 10 11 TJ - Degrees Centigrade VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 10 9 TJ = - 40ºC 25ºC 125ºC 90 TJ = 25ºC 80 8 C 70 = 150A IC - Amperes I 7 VCE - Volts 15 VCE - Volts 200 IC - Amperes VGE = 30V 25V 20V 225 6 5 100A 4 60 50 40 30 50A 3 20 2 10 1 0 6 8 10 12 14 16 18 20 22 VGE - Volts © 2011 IXYS CORPORATION, All rights Reserved 24 26 28 30 3 4 5 6 7 VGE - Volts 8 9 IXGH32N120A3 IXGT32N120A3 Fig. 8. Dependence of BVCES & V(th)GE on Junction Temperature Fig. 7. Transconductance 24 1.6 1.18 1.5 1.15 20 g f s - Siemens 16 TJ = - 40ºC 25ºC 125ºC 12 8 V(th)GE 1.12 BVCES 1.3 1.09 1.2 1.06 1.1 1.03 1.0 1.00 0.9 0.97 0.8 0.94 BVCES - Normalized V(th)GE - Normalized 1.4 4 0 0.7 0 10 20 30 40 50 60 70 80 90 100 -50 -25 0 25 IC - Amperes 75 100 0.91 150 125 TJ - Degrees Centigrade Fig. 9. Single-Pulsed Avalanche Energy vs. Junction Temperature Fig. 10. Resistive Turn-on Rise Time vs. Gate Voltage 140 1300 I 120 C RG = 10Ω, IC = 100A = 20A VCE = 960V 1100 VGE = 15V t r - Nanoseconds Eas - MilliJoules 50 100 80 60 900 700 500 TJ = 125ºC 40 300 20 100 TJ = 25ºC 25 35 45 55 65 75 85 95 105 115 125 8 10 12 14 16 18 20 22 24 26 28 30 VGE - Volts TJ - Degrees Centigrade Fig. 12. Capacitance Fig. 11. Gate Charge 16 10,000 14 VCE = 600V 12 I G = 10mA f = 1 MHz Capacitance - PicoFarads VGE - Volts I C = 50A 10 8 6 4 Cies 1,000 Coes 100 Cres 2 10 0 0 10 20 30 40 50 60 70 80 90 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 5 10 15 20 VCE - Volts 25 30 35 40 IXGH32N120A3 IXGT32N120A3 Fig. 13. Resistive Turn-on Switching Times vs. Gate Resistance Fig. 14. Resistive Turn-on Rise Time vs. Junction Temperature 420 td(on) - - - - TJ = 125ºC, VGE = 20V 380 340 64 320 61 VCE = 960V t r - Nanoseconds 58 340 55 I C = 150A I C = 100A 320 52 300 49 280 46 260 I C = 50A 240 220 10 14 18 22 26 30 34 38 42 46 t d(on) - Nanoseconds 360 RG = 10Ω, VGE = 20V VCE = 960V I 300 t r - Nanoseconds tr 400 67 I C = 100A 260 240 220 200 40 180 37 160 I 25 35 45 55 RG - Ohms 75 85 95 105 115 125 Fig. 16. Resistive Turn-off Switching Times vs. Gate Resistance 320 RG = 10Ω, VGE = 20V VCE = 960V 1980 500 1970 450 I 1960 t f - Nanoseconds TJ = 125ºC 260 240 220 200 TJ = 25ºC 180 C = 50A, 100A, 150A 400 1950 350 1940 300 1930 250 I C = 100A 1920 1910 tf 1900 TJ = 125ºC, VGE = 20V 200 t d(off) - Nanoseconds 280 t r - Nanoseconds 65 = 50A C TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Rise Time vs. Collector Current 300 = 150A 280 43 50 C 150 td(off) - - - - 100 VCE = 960V 160 1890 60 65 70 75 80 85 90 95 100 105 110 115 120 50 10 15 20 25 30 IC - Amperes td(off) - - - - RG = 10Ω, VGE = 20V 1800 2000 190 1900 170 160 I C = 150A, 100A, 50A 140 130 1300 1200 120 1200 110 125 1100 75 85 95 TJ - Degrees Centigrade © 2011 IXYS CORPORATION, All rights Reserved 105 115 160 1400 1300 65 170 VCE = 960V 150 140 55 180 1500 1400 45 td(off) - - - - RG = 10Ω, VGE = 20V 1600 150 35 tf 1700 1500 1100 190 TJ = 125ºC 130 TJ = 25ºC 120 50 60 70 80 90 100 110 IC - Amperes 120 130 140 110 150 t d(off) - Nanoseconds 1700 25 50 200 1800 t d(off) - Nanoseconds t f - Nanoseconds 200 180 VCE = 960V 1600 45 Fig. 18. Resistive Turn-off Switching Times vs. Collector Current t f - Nanoseconds 2000 tf 40 RG - Ohms Fig. 17. Resistive Turn-off Switching Times vs. Junction Temperature 1900 35 IXGH32N120A3 IXGT32N120A3 Fig. 19. Reverse-Bias Safe Operating Area 160 140 IC - Amperes 120 100 80 60 40 TJ = 125ºC 20 RG = 20Ω dv / dt < 10V / ns 0 200 300 400 500 600 700 800 900 1000 1100 1200 VCE - Volts Fig. 20. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXG_32N120A3(4A)03-04-11-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.