IXGT6N170A

High Voltage IGBT IXGT6N170 IXGH6N170 VCES = IC90 = VCE(sat)  tfi(typ) = 1700V 6A 4.0V 290ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1M 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 12 A IC90 TC = 90°C 6 A ICM TC = 25°C, 1ms 24 A SSOA VGE = 15V, TVJ = 125°C, RG = 33 ICM = 12 A (RBSOA) Clamped Inductive Load PC TC = 25°C G @ 0.8 • VCES 75 W - 55 ... +150 C TJM 150 C Tstg - 55 ... +150 C 300 260 °C °C 1.13/10 Nm/lb.in. 4 6 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 E C (Tab) TO-247 (IXGH) G Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1700 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = IC90, VGE = 15V, Note 1 5.0 TJ = 125°C TJ = 125°C © 2015 IXYS CORPORATION, All Rights Reserved 3.0 4.0 E G = Gate E = Emitter   International Standard Packages High VoltagePackage High Power Density Low Gate Drive Requirement V Applications V  μA μA ±100 nA 4.0 V C = Collector Tab = Collector Advantages  10 100 C (Tab) Features  Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) C      Capacitor Discharge & Pulse Circuits Uninterruptible Power Supplies (UPS) Motor Drives DC Servo & Robot Drives DC Choppers Switched-Mode & Resonant-Mode Power Supplies DS98989C(9/15) IXGH6N170 IXGT6N170 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 6A, VCE = 10V, Note 1 3.0 IC(ON) VGE = 15V, VCE = 10V 4.5 S 28 A VCE = 25V, VGE = 0V, f = 1MHz 330 23 6 pF pF pF IC = 6A, VGE = 15V, VCE = 0.5 • VCES 20.0 3.6 8.0 nC nC nC 40 ns Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-268 Outline Inductive load, TJ = 25°C 36 IC = 6A, VGE = 15V 250 VCE = 0.8 • VCES, RG = 33 Note 2 Inductive load, TJ = 125°C IC = 6A, VGE = 15V VCE = 0.8 • VCES, RG = 33 Note 2 TO-247 Terminals: 1 - Gate 3 - Emitter ns 500 ns 290 500 ns 1.5 2.5 mJ 45 40 0.5 300 300 2.0 ns ns mJ ns ns mJ 0.21 1.65 °C/W °C/W TO-247 Outline 1 Notes: 2,4 - Collector 2 P 3 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH6N170 IXGT6N170 Fig. 1. Output Characteristics @ TJ = 25ºC 12 VGE = 15V VGE = 15V 13V 11V 10 25 8 6 7V 4 13V 20 9V I C - Amperes I C - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC 30 11V 15 9V 10 7V 2 5 0 0 0 1 2 3 4 5 6 0 2 4 6 8 VCE - Volts Fig. 3. Output Characteristics @ TJ = 125ºC 12 1.8 14 16 18 VGE = 15V I C = 12A VCE(sat) - Normalized 1.6 8 I C - Amperes 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.0 VGE = 15V 13V 11V 10 10 VCE - Volts 9V 6 7V 4 1.4 1.2 I C = 6A 1.0 0.8 2 I C = 3A 0.6 0.4 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 VCE - Volts Fig. 5. Input Admittance 75 100 125 150 Fig. 6. Transconductance 5 10 TJ = - 40ºC TJ = - 40ºC 25ºC 125ºC 9 8 4 25ºC g f s - Siemens 7 I C - Amperes 50 TJ - Degrees Centigrade 6 5 4 3 125ºC 2 3 1 2 1 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts © 2015 IXYS CORPORATION, All Rights Reserved 7.5 8.0 8.5 0 1 2 3 4 5 6 I C - Amperes 7 8 9 10 IXGH6N170 IXGT6N170 Fig. 7. Gate Charge f = 1 MHz VCE = 850V 14 Capacitance - PicoFarads I C = 6A I G = 10mA 12 V GE - Volts Fig. 8. Capacitance 1,000 16 10 8 6 4 Cies 100 Coes 10 Cres 2 1 0 0 2 4 6 8 10 12 14 16 18 0 20 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 10. Maximum Transient Thermal Impedance Fig. 9. Reverse-Bias Safe Operating Area 10 12 Z(th)JC - ºC / W I C - Amperes 10 8 6 4 1 0.1 TJ = 125ºC RG = 33Ω dv / dt < 10V / ns 2 0 200 400 600 800 1000 1200 1400 1600 1800 0.01 0.00001 0.0001 0.001 VCE - Volts 0.01 0.1 1 10 Pulse Width - Seconds Fig. 11. Cauer Thermal Network i 1 2 3 Ri (°C/W) 0.11615 0.29930 0.26377 Ci (J/°C) 0.0019257 0.0016574 0.0262960 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_6N170 (2N) 9-23-15-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.