IXGT6N170AHV

Advance Technical Information IXGT6N170AHV High Voltage IGBT VCES IC25 VCE(sat) tfi(typ) = = ≤ = 1700V 6A 7.0V 32ns TO-268 G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 6 A IC110 TC = 110°C 3 A ICM TC = 25°C, 1ms 14 A SSOA VGE = 15V, TVJ = 125°C, RG = 33Ω ICM = 12 A (RBSOA) Clamped Inductive Load tsc (SCSOA) VGE = 15V, VCE = 1200V, TJ = 125°C RG = 33Ω, Non Repetitive 10 μs PC TC = 25°C 75 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 4 g 0.8 • VCES TJ TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1700 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 3A, VGE = 15V, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved C (Tab) V TJ = 125°C TJ = 125°C 5.4 5.0 V 10 500 μA μA ±100 nA 7.0 V V G = Gate E = Emiiter C = Collector Tab = Collector Features High Blocking Voltage High Voltage Package Advantages High Power Density Easy to Mount Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines DS100476(01/13) IXGT6N170AHV Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. IC = 6A, VCE = 20V, Note 1 2.0 3.5 S VCE = 25V, VGE = 0V, f = 1MHz 390 20 7 pF pF pF IC = 6A, VGE = 15V, VCE = 0.5 • VCES 18.5 2.8 8.2 nC nC nC 46 40 0.59 220 32 0.18 ns ns mJ ns ns mJ Inductive load, TJ = 25°C IC = 6A, VGE = 15V VCE = 0.5 • VCES, RG = 33Ω Note 2 48 43 0.62 230 41 0.25 Inductive load, TJ = 125°C IC = 6A, VGE = 15V VCE = 0.5 • VCES, RG = 33Ω Note 2 RthJC Notes: TO-268 (VHV) Outline 400 0.36 PIN: 1 - Gate 2 - Emitter 3 - Collector ns ns mJ ns ns mJ 1.65 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGT6N170AHV Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 24 12 VGE = 15V 13V 11V 10 VGE = 15V 20 13V 16 IC - Amperes IC - Amperes 8 9V 6 4 7V 11V 12 9V 8 7V 4 2 5V 0 0 0 2 4 6 8 10 12 0 5 10 15 25 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 12 2.0 VGE = 15V 13V 11V 10 VGE = 15V 1.8 I C = 12A I C = 6A I C = 3A VCE(sat) - Normalized 1.6 8 IC - Amperes 20 VCE - Volts VCE - Volts 9V 6 4 7V 1.4 1.2 1.0 0.8 2 0.6 5V 0 0.4 0 2 4 6 8 10 12 -50 14 -25 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 12 18 TJ = 25ºC 16 10 14 8 I 12 C IC - Amperes VCE - Volts 0 = 12A 10 6 4 8 TJ = 125ºC 25ºC - 40ºC 6A 2 6 3A 4 0 6 8 10 12 14 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 16 18 20 3.5 4.5 5.5 6.5 VGE - Volts 7.5 8.5 9.5 IXGT6N170AHV Fig. 8. Gate Charge Fig. 7. Transconductance 5 16 TJ = - 40ºC VCE = 850V 14 I C = 6A 3 25ºC 12 125ºC 10 VGE - Volts g f s - Siemens 4 2 I G = 1mA 8 6 4 1 2 0 0 0 2 4 6 8 10 0 12 2 4 6 IC - Amperes 8 10 12 14 16 18 20 QG - NanoCoulombs Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Capacitance 1,000 12 Capacitance - PicoFarads IC - Amperes 10 8 6 4 TJ = 125ºC 2 0 200 Cies 100 Coes 10 Cres RG = 33Ω dv / dt < 10V / ns f = 1 MHz 1 400 600 800 1000 1200 1400 1600 1800 0 5 10 VCE - Volts 15 20 25 30 35 40 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Fig. 12. Forward-Bias Safe Operating Area 10 100 VCE(sat) Limit 1 ID - Amperes Z(th)JC - ºC / W 10 0.1 25µs 1 100µs 1ms 0.1 TJ = 150ºC TC = 25ºC Single Pulse 0.01 0.00001 10ms 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 10000 IXGT6N170AHV Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance Eon - Eoff 0.7 --- TJ = 125ºC , VGE = 15V VCE = 850V 0.6 0.6 2.5 0.5 C = 12A 0.5 2.0 0.4 1.5 0.3 I C = 6A 0.2 0.1 30 40 50 60 70 80 90 100 110 3.5 Eoff Eon ---- 3.0 RG = 33Ω , VGE = 15V VCE = 850V 0.4 2.5 2.0 TJ = 125ºC, 25ºC 0.3 1.5 1.0 0.2 1.0 0.5 0.1 0.5 0.0 120 0 0.0 6 RG - Ohms Eon - MilliJoules I 3.0 Eon - MilliJoules Eo f f - MilliJoules 0.7 3.5 E o f f - MilliJoules 0.8 Fig. 14. Inductive Switching Energy Loss vs. Collector Current 7 8 9 10 11 12 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 2.00 0.7 Eoff Eon 0.6 VCE = 850V ---- 1.75 RG = 33Ω , VGE = 15V 0.5 I C 1.50 1.25 = 12A 0.4 1.00 0.3 Eon - MilliJoules Eo f f - MilliJoules 0.8 0.75 I C = 6A 0.2 0.50 0.1 25 35 45 55 65 75 85 95 105 115 0.25 125 TJ - Degrees Centigrade © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: G_6N170A(2N) 08-12-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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