IXGX32N170H1

Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE(sat) tfi(typ) Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; RGE = 1 MΩ VGES Continuous VGEM Transient IC25 TC = 25°C IC90 TC = 90°C ICM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 PC TC = 25°C 350 W -55 ... +150 °C 150 °C -55 ... +150 °C 22...130/5...30 N/lb TJM Tstg V 1700 V ±20 V ±30 V 75 A 32 A 200 A ICM = 90 @ 0.8 VCES BS Mounting force with chip Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s O Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC © 2003 IXYS All rights reserved °C 6 C G = Gate, E = Emitter, (TAB) E C = Collector, TAB = Collector g Features z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 1mA, VGE = 0 V = 250 µA, VCE = VGE = IC90, VGE = 15 V G A µs 300 Weight Symbol PLUS247 (IXGX) LE 1700 O TJ FC Maximum Ratings TE Symbol = 1700 V = 75 A = 3.3 V = 290 ns 1700 3.0 Note 1 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 2.5 3.0 5.0 V V 500 8 µA mA ±100 nA 3.3 V V DS99071(07/03) IXGX Test Conditions gfs IC = IC25; VCE = 10 V Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 25 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 33 S 3500 pF 250 pF 40 pF 155 nC 30 nC Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 51 Qgc td(on) Inductive load, TJ = 25°°C tri IC = IC90, VGE = 15 V td(off) RG = 2.7 Ω, VCE = 0.8 VCES Note 3 tfi 45 38 270 250 Eoff td(on) Inductive load, TJ = 125°°C tri IC = IC90, VGE = 15 V Eon td(off) RG = 2.7 Ω, VCE = 0.8 VCES Note 3 Eoff BS RthJC RthCK Reverse Diode (FRED) (Note 4) Symbol VF Test Conditions ns 500 ns 25 mJ 42 ns 6.0 360 mJ ns 560 ns 22 mJ 0.15 0.35 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. O IF = 50A, VGE = 0 V, -diF/dt = 800 A/µs VR = 600 V 2.7 50 150 RthJC Notes: 1. ns 500 ns IF = 70A, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IRM t rr ns 48 O tfi nC LE 15 PLUS247 Outline (IXGX) TE Symbol 32N170H1 V A ns 0.4 K/W Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. 4. See DH60-18A and IXGH32N170A datasheets for additional characteristics IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.