IXGX400N30A3

IXGK400N30A3 IXGX400N30A3* GenX3TM 300V IGBTs VCES = 300V IC25 = 400A VCE(sat) ≤ 1.15V *Obsolete Part Number Ultra-Low Vsat PT IGBTs for up to 10kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ILRMS ICM TC = 25°C (Chip Capability) TC = 110°C Terminal Current Limit TC = 25°C, 1ms 400 200 160 1200 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load ICM = 400 @ 0.8 • VCES A PC TC = 25°C 1000 W TJ TJM -55 ... +150 150 °C °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 10 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque ( IXGK ) Mounting Force ( IXGX ) Weight TO-264 PLUS247 G G BVCES IC = 1mA, VGE = 0V 300 VGE(th) IC = 4mA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V V 5.0 50 μA 2 mA TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC IC = 100A, VGE = 15V, Note 1 = 400A V ±400 nA 1.15 1.70 V V Tab E Tab E = Emitter Tab = Collector Features z z z Optimized for Low Conduction Losses High Avalanche Capability International Standard Packages Advantages High Power Density Low Gate Drive Requirement Applications z z z z z z z z z © 2009 IXYS CORPORATION, All Rights Reserved C G = Gate C = Collector z Characteristic Values Min. Typ. Max. E E PLUS247TM (IXGX) z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) C Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS99584B(12/09) IXGK400N30A3 IXGX400N30A3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 100 IC = 60A, VCE = 10V, Note 1 170 S 19 nF 1350 pF 190 pF Cies Coes VCE = 25V, VGE = 0V, f = 1 MHz Cres Qg(on) Qge IC = 100A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tr td(off) tf td(on) tr td(off) tf TO-264 (IXGK) Outline Resistive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 240V, RG = 1Ω Resistive load, TJ = 125°C IC = 100A, VGE = 15V VCE = 240V, RG = 1Ω 560 nC 83 nC 185 nC 45 ns 45 ns 210 ns 107 ns 47 ns 53 ns 240 ns 315 ns 0.125 °C/W RthJC RthCK 0.15 °C/W PLUS247TM (IXGX) Outline Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK400N30A3 IXGX400N30A3 Fig. 2. Output Characteristics @ T J = 125ºC Fig. 1. Output Characteristics @ T J = 25ºC 300 350 VGE = 15V 11V 9V 300 250 IC - Amperes 250 IC - Amperes VGE = 15V 11V 9V 7V 200 150 200 7V 150 100 100 5V 50 50 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.0 2.4 0.2 0.4 0.6 VCE - Volts 1.0 1.2 1.4 1.8 14 15 3.2 TJ = 25ºC VGE = 15V 2.8 1.2 I C = 300A I 2.4 1.1 1.0 I C VCE - Volts VCE(sat) - Normalized 1.6 Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 3. Dependence of VCE(sat) on Junction Temperature 1.3 0.8 VCE - Volts = 200A C = 300A 200A 100A 2.0 1.6 0.9 1.2 0.8 I C = 100A 0.8 0.7 -50 -25 0 25 50 75 100 125 5 150 6 7 8 9 10 11 12 13 VGE - Volts TJ - Degrees Centigrade Fig. 5. Input Admittance Fig. 6. Transconductance 280 350 240 300 TJ = - 40ºC 250 TJ = 125ºC 25ºC - 40ºC 160 g f s - Siemens IC - Amperes 200 120 25ºC 200 125ºC 150 80 100 40 50 0 0 4.0 4.4 4.8 5.2 5.6 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 6.0 6.4 6.8 0 40 80 120 160 IC - Amperes 200 240 280 IXGK400N30A3 IXGX400N30A3 Fig. 8. Capacitance Fig. 7. Gate Charge 16 100,000 f = 1 MHz VCE = 150V 14 I G = 10mA 12 VGE - Volts Capacitance - PicoFarads I C = 100A 10 8 6 4 Cies 10,000 Coes 1,000 Cres 2 100 0 0 100 200 300 400 500 0 600 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 10. Maximum Transient Thermal Impedance Fig. 9. Reverse-Bias Safe Operating Area 1.000 450 400 300 Z(th)JC - ºC / W IC - Amperes 350 250 200 150 0.100 0.010 TJ = 125ºC 100 RG = 1Ω dv / dt < 10V / ns 50 0 25 75 125 175 225 275 325 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXGK400N30A3 IXGX400N30A3 Fig. 11. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 12. Resistive Turn-on Rise Time vs. Collector Current 56 56 RG = 1Ω , VGE = 15V I VCE = 240V 54 = 300A, 200A, 100A C TJ = 125ºC t r - Nanoseconds t r - Nanoseconds 54 52 50 48 52 RG = 1Ω , VGE = 15V VCE = 240V 50 48 TJ = 25ºC 46 46 44 100 44 25 35 45 55 65 75 85 95 105 115 125 120 140 160 180 Fig. 13. Resistive Turn-on Switching Times vs. Gate Resistance td(on) - - - - 64 80 60 70 56 60 52 50 48 40 44 30 2 3 4 5 6 7 8 9 300 220 I C = 300A, 200A, 100A 200 200 100 190 25 10 35 45 td(off) - - - - 900 VCE = 240V 800 300 700 = 100A 600 500 I C = 200A, 300A 240 400 220 300 200 200 180 100 3 4 5 6 RG - Ohms 95 105 115 180 125 7 © 2009 IXYS CORPORATION, All Rights Reserved 8 240 1000 9 10 tf 300 td(off) - - - - 230 RG = 1Ω, VGE = 15V VCE = 240V t f - Nanoseconds t f - Nanoseconds TJ = 125ºC, VGE = 15V 2 85 250 220 TJ = 125ºC 200 210 150 200 TJ = 25ºC 100 50 100 t d ( o f f ) - Nanoseconds tf 340 1 75 350 t d ( o f f ) - Nanoseconds 360 260 65 Fig. 16. Resistive Turn-off Switching Times vs. Collector Current 1100 C 55 TJ - Degrees Centigrade 380 I 210 150 Fig. 15. Resistive Turn-off Switching Times vs. Gate Resistance 280 230 250 RG - Ohms 320 300 240 VCE = 240V 50 40 1 280 t d ( o f f ) - Nanoseconds 68 td(off) - - - - RG = 1Ω, VGE = 15V 72 I C = 200A, 100A 90 tf 350 VCE = 240V 100 260 250 76 t f - Nanoseconds 110 TJ = 125ºC, VGE = 15V 240 400 t d ( o n ) - Nanoseconds t r - Nanoseconds 80 tr 220 Fig. 14. Resistive Turn-off Switching Times vs. Junction Temperature 130 120 200 IC - Amperes TJ - Degrees Centigrade 190 120 140 160 180 200 220 240 260 280 180 300 IC - Amperes IXYS REF: G_400N30A3(96)11-18-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.