IXGX72N60A3H1

Preliminary Technical Information IXGK72N60A3H1 IXGX72N60A3H1* GenX3TM 600V IGBT w/Diode *Obsolete Part Number Ultra-Low Vsat PT IGBTs for up to 5kHz Switching VCES IC110 VCE(sat) tfi(typ) = = £ = 600V 72A 1.35V 250ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 75 A IC110 TC = 110C 72 A IF110 TC = 110C ICM TC = 25C, 1ms SSOA VGE = 15V, TVJ = 125C, RG = 3 (RBSOA) Clamped Inductive Load PC TC = 25C 68 A 400 A ICM = 150 A VCE  VCES 540 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 1.13 / 10 20..120 / 4.5..27 Nm/lb.in N/lb C TJ Md FC Mounting Torque (TO-264) Mounting Force (PLUS247) TL Maximum Lead Temperature for Soldering 300 TSOLD 1.6mm (0.062 in.) from Case for 10s 260C Weight TO-264 PLUS247 10 6 g g G C E PLUS247 (IXGX) G VGE(th) IC = 250A, VCE = VGE 3.0 5.0 V A mA 100 nA VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC = 60A, VGE = 15V, Note 1 TJ = 125C 1.35     Tab E = Emitter Tab = Collector Optimized for Low Conduction Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Packages Advantages V          © 2013 IXYS CORPORATION, All Rights Reserved E High Power Density Low Gate Drive Requirement Applications 300 5 ICES C Features  Characteristic Values Min. Typ. Max. G G = Gate C = Collector  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Tab Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS100144A(8/13) IXGK72N60A3H1 IXGX72N60A3H1 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 48 TO-264 Outline 75 S 6600 360 80 pF pF pF 230 nC Qgc 40 80 nC nC td(on) 31 ns 34 1.4 ns mJ 320 ns 250 ns 3.5 mJ 29 34 2.6 510 375 6.5 ns ns mJ ns ns mJ 0.15 0.23 C/W C/W Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge tri Eon td(off) tfi IC = 60A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25C IC = 50A, VGE = 15V VCE = 480V, RG = 3 Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 125C IC = 50A, VGE = 15V VCE = 480V, RG = 3 RthJC RthCS Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions Characteristic Values Min. Typ. Max. VF IF = 60A, VGE = 0V, Note 1 IRM IF = 60A, VGE = 0V, trr IF = 60A, -di/dt = 200A/μs, VR = 300V TJ = 150°C 1.6 1.4 TJ = 100°C 8.3 A 140 ns RthJC Note 2.3 1.8 V V 0.3 °C/W 1: Pulse test, t  300s, duty cycle, d 2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK72N60A3H1 IXGX72N60A3H1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 120 VGE = 15V 13V 11V 240 9V 80 I C - Amperes I C - Amperes 100 VGE = 15V 13V 11V 300 60 7V 40 180 9V 120 7V 60 20 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 1 2 3 4 7 8 100 125 150 7.0 7.5 8.0 1.4 120 VGE = 15V 13V 11V 9V VGE = 15V 1.3 VCE(sat) - Normalized 100 I C - Amperes 6 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 80 60 7V 40 20 I C = 120A 1.2 1.1 I C = 60A 1.0 0.9 0.8 5V I C = 30A 0.7 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 1.8 -25 0 VCE - Volts 25 50 75 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 3.2 180 TJ = 25ºC 2.8 160 140 I C - Amperes I C = 120A 60A 30A 2.4 VCE - Volts 5 VCE - Volts VCE - Volts 2.0 1.6 TJ = 125ºC 25ºC - 40ºC 120 100 80 60 40 1.2 20 0.8 0 5 7 9 11 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 IXGK72N60A3H1 IXGX72N60A3H1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 TJ = - 40ºC 120 VCE = 300V 14 80 I C = 60A I G = 10mA 12 25ºC VGE - Volts g f s - Siemens 100 125ºC 60 10 8 6 40 4 20 2 0 0 0 20 40 60 80 100 120 140 160 180 200 0 40 80 I C - Amperes 160 200 240 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 160 100,000 f = 1 MHz 140 Cies 10,000 120 I C - Amperes Capacitance - PicoFarads 120 QG - NanoCoulombs 1,000 Coes 100 Cres 100 80 60 40 TJ = 125ºC 20 RG = 3Ω dv / dt < 10V / ns 0 10 0 5 10 15 20 25 30 35 40 100 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions. 1 10 IXGK72N60A3H1 IXGX72N60A3H1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 9 18 16 8 16 Eoff 7 14 VCE = 480V I C = 100A Eon - 6 --- TJ = 125ºC , VGE = 15V 10 5 VCE = 480V 8 4 I C = 50A Eon 6.00 5.25 TJ = 125ºC 12 4.50 10 3.75 8 3.00 TJ = 25ºC 3 4 2 4 1.50 1 2 0.75 0 0 I C = 25A 0 0 5 10 15 20 25 30 35 6 20 30 40 50 RG - Ohms 18 ---- VCE = 480V 14 10 4 8 3 I C = 50A 6 2 4 2 2 I C = 25A 0 35 45 55 65 75 85 95 105 115 900 I C = 50A 800 369 1 363 0 125 360 700 500 400 5 10 15 530 360 TJ = 125ºC 450 RG = 3Ω, VGE = 15V VCE = 480V 410 280 370 260 330 TJ = 25ºC 220 50 60 70 25 30 35 80 I C - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 90 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 580 540 500 I C = 25A, 50A, 100A 340 460 320 420 300 380 280 340 tfi 260 290 240 250 100 220 td(off) - - - - RG = 3Ω, VGE = 15V 260 VCE = 480V 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 300 115 220 125 t d(off) - Nanoseconds 490 td(off) - - - - t d(off) - Nanoseconds 340 t f i - Nanoseconds 380 40 20 RG - Ohms 570 30 600 I C = 25A 0 380 20 1000 I C = 100A 372 400 240 1200 375 610 300 1300 1100 378 400 320 1400 td(off) - - - - 381 366 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi 0.00 100 VCE = 480V TJ - Degrees Centigrade 360 90 t d(off) - Nanoseconds 5 E on - MilliJoules I C = 100A 25 80 TJ = 125ºC, VGE = 15V 384 5 12 tfi 387 6 RG = 3ΩVGE = 15V t f i - Nanoseconds 16 Eon 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 390 7 Eoff 60 2.25 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff - MilliJoules ---- RG = 3ΩVGE = 15V 6 2 t f i - Nanoseconds 6.75 E on - MilliJoules Eoff Eon - MilliJoules 12 Eoff - MilliJoules 18 14 E off - MilliJoules Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXGK72N60A3H1 IXGX72N60A3H1 td(on) - tri 110 120 --- 110 TJ = 125ºC , VGE = 15V 100 VCE = 480V 80 70 70 60 I C = 50A 50 I C = 25A 50 30 29 20 28 27 10 10 0 25 30 35 20 RG - Ohms 30 40 50 60 70 80 90 26 100 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 100 90 35 34 80 33 I C = 100A 70 td(on) - tri --- RG = 3, VGE = 15V 60 32 31 VCE = 480V 50 30 40 29 I C = 50A 30 t d(on) - Nanoseconds t r i - Nanoseconds 30 20 20 32 40 20 15 TJ = 125ºC 31 30 10 33 50 30 5 34 VCE = 480V 60 40 0 TJ = 25ºC RG = 3Ω, VGE = 15V 70 40 10 td(on) - - - - t d(on) - Nanoseconds 80 t d(on) - Nanoseconds 90 I C = 100A 35 tri 80 100 90 60 90 t r i - Nanoseconds 120 t r i - Nanoseconds Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 28 I C = 25A 20 27 10 25 35 45 55 65 75 85 95 105 115 26 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions. IXYS REF: G_72N60A3(76)4-23-09-C IXGK72N60A3H1 IXGX72N60A3H1 Fig. 21 Fig. 22 Fig. 24 Fig. 25 Fig. 23 Z(th)JC - [ ºC / W ] 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 s] Pulse Width [[ms] Fig. 26 Maximum transient thermal impedance junction to case (for diode) © 2013 IXYS CORPORATION, All Rights Reserved 1 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.