IXGX72N60B3H1

GenX3TM 600V IGBT w/ Diode IXGK72N60B3H1 IXGX72N60B3H1 VCES IC110 VCE(sat) tfi(typ) Medium Speed Low Vsat PT IGBTs 5-40 kHz Switching = = £ = 600V 72A 1.8V 92ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C ( Chip Capability) 178 A ILRMS Terminal Current Limit 160 A IC110 TC = 110C ICM TC = 25C, 1ms SSOA VGE = 15V, TVJ = 125C, RG = 3 (RBSOA) Clamped Inductive Load PC TC = 25C 72 A 450 A ICM = 240 A @ VCE  VCES 540 W G C E PLUS247 (IXGX) G -55 ... +150 C 150 C Tstg -55 ... +150 C Features 300 260 °C °C  1.13/10 Nm/lb.in  20..120 /4.5..27 N/lb  10 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247)  Characteristic Values Min. Typ. Max. VGE(th) IC 3.0 ICES VCE = VCES, VGE = 0V = 250A, VCE = VGE 5.0 300 A 5 mA TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC IC = 60A, VGE = 15V, Note 1 = 120A V 100 1.50 1.75 1.80 nA V V E Tab E = Emitter Tab = Collector Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode High Power Density Low Gate Drive Requirement Applications         © 2016 IXYS CORPORATION, All Rights Reserved C Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) G G = Gate C = Collector TJM TJ Tab Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99869C(01/16) IXGK72N60B3H1 IXGX72N60B3H1 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Cies Coes Cres Characteristic Values Min. Typ. Max. td(on) tri Eon td(off) tfi IC = 50A, VCE = 10V, Note 1 45 76 A B S Q S R VCE = 25V, VGE = 0V, f = 1MHz 6800 575 80 pF pF pF 225 nC 40 82 nC nC IC = 60A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 480V, RG = 3 Note 2 Eoff td(on) tri Eon td(off) tfi Eoff D E Qg(on) Qge Qgc TO-264 Outline Inductive load, TJ = 125°C IC = 50A, VGE = 15V VCE = 480V, RG = 3 Note 2 RthJC RthCS 31 ns 33 1.4 ns mJ 152 240 92 150 ns 1.0 2.0 mJ Q1 D R1 1 2 3 C L1 L O J M C A M b b1 e PINS: 1 - Gate 2,4 - Collector 3 - Emitter c b2 A1 BACK SIDE A OP O O K M D B M 4 ns 29 34 2.7 228 142 2.2 ns ns mJ ns ns mJ 0.15 0.23 C/W C/W PLUS247TM Outline A A2 E Q R Reverse Diode (FRED) D2 D1 D 4 1 Symbol Test Conditions (TJ = 25C, Unless Oherwise Specified) VF IRM trr IF = 60A, VGE = 0V, Note 1 IF = 60A, VGE = 0V, -diF/dt = 200A/sVR = 300V Characteristic Values Min. Typ. Max. 3 E1 L V V TJ = 150C 1.40 TJ = 100C 8.3 A 140 ns A1 C b b2 b4 e PINS: 1 - Gate 2 - Collector 3 - Emitter 0.30 C/W RthJC Notes: 2.45 1.80 2 L1 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK72N60B3H1 IXGX72N60B3H1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 120 VGE = 15V 13V 11V 100 250 9V 80 60 I C - Amperes I C - Amperes VGE = 15V 13V 11V 300 7V 40 9V 200 150 100 20 7V 50 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 2.4 1 2 3 5 6 7 8 100 125 150 7.0 7.5 8.0 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 1.3 120 VGE = 15V 13V 11V 9V VGE = 15V 1.2 VCE(sat) - Normalized 100 I C - Amperes 4 VCE - Volts VCE - Volts 80 7V 60 40 I C = 120A 1.1 I C = 60A 1.0 0.9 I C = 30A 0.8 20 5V 0.7 0 0.0 0.5 1.0 1.5 2.0 -50 2.5 -25 0 25 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 75 Fig. 6. Input Admittance 180 4.5 TJ = 25ºC 4.0 160 I C = 120A 60A 30A 140 I C - Amperes 3.5 VCE - Volts 50 TJ - Degrees Centigrade VCE - Volts 3.0 2.5 120 100 80 TJ = 125ºC 25ºC - 40ºC 60 2.0 40 1.5 20 1.0 0 5 6 7 8 9 10 11 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 IXGK72N60B3H1 IXGX72N60B3H1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 TJ = - 40ºC 120 VCE = 300V 14 I G = 10mA 12 25ºC 80 V GE - Volts g f s - Siemens 100 I C = 60A 125ºC 60 10 8 6 40 4 20 2 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 I C - Amperes 100 120 140 160 180 200 220 240 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 280 10,000 Cies 240 200 1,000 I C - Amperes Capacitance - PicoFarads 80 Coes 100 160 120 80 TJ = 125ºC Cres RG = 3Ω dv / dt < 10V / ns 40 f = 1 MHz 0 10 0 5 10 15 20 25 30 35 100 40 200 300 400 500 600 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance for IGBT Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGK72N60B3H1 IXGX72N60B3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 8 9 7 8 I C =100A 7 4 Eon 5 TJ = 125ºC , VGE = 15V I C = 50A VCE = 480V 3 2 4 1 5 10 15 20 25 30 35 40 45 50 4 4 3 3 TJ = 25ºC 1 20 55 30 40 50 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 240 6 6 220 4 Eon 3 RG = 3ΩVGE = 15V I C = 50A 2 Eon - MilliJoules E off - MilliJoules 5 4 VCE = 480V 2 1 0 35 45 55 65 75 85 95 105 115 1300 I C = 25A, 50A, 100A 1000 I C = 100A 180 850 160 700 I C = 50A 140 550 400 100 0 5 10 15 t f i - Nanoseconds 55 245 220 180 175 110 160 TJ = 25ºC 70 70 50 200 130 60 100 45 235 205 50 40 260 190 40 35 220 150 30 30 80 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 90 230 I C = 25A, 50A, 100A 160 215 140 200 120 185 100 145 80 130 100 60 tri 170 td(off) RG = 3Ω, VGE = 15V 155 VCE = 480V 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 140 125 t d(off) - Nanoseconds RG = 3Ω, VGE = 15V VCE = 480V 20 25 250 t d(off) - Nanoseconds td(off) 90 20 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature t f i - Nanoseconds TJ = 125ºC 170 250 TJ = 125ºC, VGE = 15V VCE = 480V 80 0 125 td(off) RG - Ohms 230 tfi tf i I C = 25A Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 190 1150 200 TJ - Degrees Centigrade 210 0 100 90 120 1 I C = 25A 25 80 t d(off) - Nanoseconds I C = 100A t f i - Nanoseconds 7 Eoff 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 7 3 60 I C - Amperes RG - Ohms 5 2 0 1 0 5 TJ = 125ºC 1 2 0 VCE = 480V 2 3 I C = 25A 6 E on - MilliJoules 6 Eoff Eon RG = 3ΩVGE = 15V 5 Eon - MilliJoules 5 7 Eoff 6 E off - MilliJoules 6 E off - MilliJoules 7 IXGK72N60B3H1 IXGX72N60B3H1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri 150 TJ = 125ºC, VGE = 15V VCE = 480V 125 80 110 70 95 90 80 70 65 I C = 50A 50 td(on) 33 RG = 3Ω, VGE = 15V VCE = 480V 32 TJ = 25ºC, 125ºC 60 31 50 25ºC < TJ < 125ºC 30 40 29 30 28 35 20 27 20 10 50 30 34 tri t d(on) - Nanoseconds I C = 100A 110 90 t d(on) - Nanoseconds 130 t r i - Nanoseconds 140 td(on) t r i - Nanoseconds 170 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current I C = 25A 10 0 5 10 15 20 25 30 35 40 45 50 55 20 RG - Ohms 30 40 50 60 70 80 90 26 100 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 100 35 90 34 33 I C = 100A tri 70 td(on) 32 RG = 3Ω, VGE = 15V 60 31 VCE = 480V 50 30 I C = 50A 40 29 30 28 20 t d(on) - Nanoseconds t r i - Nanoseconds 80 27 I C = 25A 10 26 0 25 35 45 55 65 75 85 95 105 115 25 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_72N60B3(76) 6-26-08-C IXGK72N60B3H1 IXGX72N60B3H1 Fig. 21 Fig. 22 Fig. 24 Fig. 25 Fig. 23 Z(th)JC ºC/ W /W Z(th)JC - -[ [ºC ] ] 1.00 1 0.1 0.10 0.01 0.01 0.0001 0.0001 0.001 0.001 0.01 0.01 0.1 Pulse Width [s] 0.1 s] Pulse Width [[ms] Fig. 26 Maximum Transient Thermal Impedance Junction to Case (for Diode) Fig. 26 Maximum transient thermal impedance junction to case (for diode) © 2016 IXYS CORPORATION, All Rights Reserved 1 1 10 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.