IXGX72N60C3H1

IXGX72N60C3H1* GenX3TM 600V IGBT with Diode VCES IC110 VCE(sat) tfi(typ) *Obsolete Part Number High-Speed PT IGBT for 40-100kHz Switching = = ≤£ = 600V 72A 2.5V 55ns PLUS247 Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 VGEM Transient ±30 IC25 TC = 25°C (Limited by Leads) IC110 TC = 110°C (Chip Capability) ICM TC = 25°C, 1ms IA EAS TC = 25°C TC = 25°C SSOA VGE = 15V, TVJ = 125°C, RG = 2Ω (RBSOA) Clamped Inductive Load PC TC = 25°C TJM Tstg V A A 360 A 50 500 A mJ ICM = 150 A ol 72 VCE ≤ VCES 540 W z z z z 150 °C z -55 ... +150 °C 20..120 / 4.5..27 N/lb. Maximum Lead Temperature for Soldering 300 °C TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C 6 g O TL PLUS247 Advantages z z z Characteristic Values Min. Typ. Max. VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V z z 5.5 V 250 3 μA mA ±100 nA 2.50 V z z TJ = 125°C VCE = 0V, VGE = ±20V VCE(sat) IC = 50A, VGE = 15V, Note 1 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved Optimized for Low Switching Losses Square RBSOA Avalanche Rated Anti-Parallel Ultra Fast Diode International Standard Package High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IGES C = Collector Tab = Collector Features °C Mounting Force Tab ES G = Gate E = Emitter -55 ... +150 MF Weight CD et 75 G G V bs TJ Maximum Ratings e Symbol 2.10 1.65 z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100011A(11/09) IXGX72N60C3H1 gfs Characteristic Values Min. Typ. Max. IC = 50A, VCE = 10V, Note 1 33 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc td(on) tri Eon td(off) tfi IC = 50A, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°°C IC = 50A, VGE = 15V S 4780 330 117 pF pF pF 174 33 72 nC nC nC 27 ns 37 1.03 ns mJ 77 130 ns 55 110 ns 0.95 mJ 0.48 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 ns ns mJ ns ns mJ et 26 36 1.48 120 124 0.93 Terminals: Inductive Load, TJ = 25°°C IC = 50A, VGE = 15V VCE = 480V, RG = 2Ω, Note 2 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 ol td(on) tri Eon td(off) tfi Eoff 55 VCE = 480V, RG = 2Ω, Note 2 Eoff PLUS247TM (IXGX) Outline e Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) RthJC RthCS 0.23 °C/W °C/W bs 0.15 Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IRM trr RthJC Notes: IF = 60A, VGE = 0V, Note 1 TJ = 150°C O VF Characteristic Values Min. Typ. Max. TJ = 100°C IF = 60A, VGE = 0V, -diF/dt = 200A/μs, VR = 300V 1.6 1.4 2.0 1.8 V V 8.3 A 140 ns 0.3 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGX72N60C3H1 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 100 350 VGE = 15V 13V 11V 90 80 11V 9V 250 IC - Amperes 70 IC - Amperes VGE = 15V 13V 300 60 50 7V 40 30 200 9V 150 100 20 7V 50 10 5V 5V 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 VCE - Volts 4 8 10 12 14 et Fig. 4. Dependence of VCE(sat) on JunctionTemperature 1.3 100 VGE = 15V 13V 11V 90 80 VGE = 15V 1.2 1.1 ol VCE(sat) - Normalized 9V 70 60 50 7V 40 bs 30 20 5V 10 0 0.0 0.4 0.8 1.2 1.6 2.0 0.9 O 4.5 C C = 50A I C = 25A 0.6 0.5 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Input Admittance 100 TJ = 25ºC 90 80 TJ = 125ºC 25ºC - 40ºC 70 = 100A 50A 25A IC - Amperes I I 0.7 2.4 4.0 3.5 = 100A C 0.8 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 5.0 I 1.0 VCE - Volts VCE - Volts 6 VCE - Volts Fig. 3. Output Characteristics @ T J = 125ºC IC - Amperes 2 e 0.0 0 3.0 60 50 40 30 2.5 20 2.0 10 1.5 0 6 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 8.0 IXGX72N60C3H1 Fig. 8. Gate Charge Fig. 7. Transconductance 16 90 TJ = - 40ºC 80 70 60 VGE - Volts 125ºC 50 I C = 50A I G = 10mA 12 25ºC g f s - Siemens VCE = 300V 14 40 30 10 8 6 4 20 2 10 0 0 10 20 30 40 50 60 70 80 90 0 100 20 40 60 80 100 e 0 120 140 160 180 QG - NanoCoulombs et IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 160 10,000 140 120 1,000 IC - Amperes ol Capacitance - PicoFarads Cies Coes 100 f = 1 MHz 10 0 5 10 bs Cres 15 20 25 30 35 40 100 80 60 40 TJ = 125ºC , RG = 2Ω dv / dt < 10V / ns 20 0 100 200 300 Z (th)JC - ºC / W 1.00 O VCE - Volts 400 500 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGX72N60C3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 5.0 Eoff 4.5 Eon - --- 5.5 TJ = 125ºC , VGE = 15V 4.0 5.6 Eoff 2.4 VCE = 480V I C 4.0 = 100A 2.5 3.5 2.0 3.0 1.5 2.5 I C = 50A 1.0 Eoff - MilliJoules 3.0 4.0 1.6 3.2 1.2 2.4 TJ = 125ºC, 25ºC 0.8 1.6 0.4 0.8 2.0 0.5 1.5 0.0 0.0 1.0 3 4 5 6 7 8 9 10 11 12 13 14 20 15 RG - Ohms 4.8 RG = 2Ω , VGE = 15V 3.2 I C = 100A 1.5 2.4 bs 1.6 I C = 50A 0.5 0.0 35 Eon - MilliJoules 2.0 25 180 tf 45 55 65 75 170 TJ = 125ºC, VGE = 15V 85 95 105 115 0.8 0.0 125 O 140 VCE = 480V 140 C 120 100 110 80 100 60 90 TJ = 25ºC 40 80 20 20 30 40 50 60 70 80 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 90 70 100 = 100A 250 130 200 I 120 C = 50A 150 110 100 100 50 90 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 125 tf td(off) - - - - 115 RG = 2Ω , VGE = 15V VCE = 480V 120 105 100 95 I C = 100A I C = 50A 80 60 85 75 40 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 65 125 t d(off) - Nanoseconds TJ = 125ºC 350 300 I 140 130 120 400 150 140 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 2Ω , VGE = 15V 450 160 150 t f - Nanoseconds tf 500 160 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 160 0.0 100 VCE = 480V TJ - Degrees Centigrade 180 90 td(off) - - - - ol 4.0 1.0 80 et ---- t f - Nanoseconds VCE = 480V 70 t d(off) - Nanoseconds 2.5 60 190 5.6 Eon 50 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 3.5 Eoff 40 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 3.0 30 e 2 E off - MilliJoules 4.8 VCE = 480V 2.0 4.5 ---- Eon - MilliJoules 3.5 Eon RG = 2Ω , VGE = 15V 5.0 E on - MilliJoules E off - MilliJoules 2.8 6.0 IXGX72N60C3H1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 160 60 C 50 = 100A 100 45 80 40 60 35 I 30 C = 50A 20 25 3 4 5 6 7 8 9 10 11 12 13 14 32 70 30 TJ = 25ºC, 125ºC 60 28 50 26 40 24 30 22 20 20 10 15 20 30 40 50 60 70 80 90 18 100 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 120 et RG - Ohms 35 110 tr 100 RG = 2Ω , VGE = 15V td(on) - - - - 34 33 VCE = 480V 80 32 ol 90 31 I C = 100A 70 30 60 29 28 40 bs 50 t d(on) - Nanoseconds t r - Nanoseconds 34 VCE = 480V 80 e 2 36 td(on) - - - - RG = 2Ω , VGE = 15V t d(on) - Nanoseconds I 40 tr 90 VCE = 480V 120 38 100 55 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V t r - Nanoseconds tr 140 110 27 30 I 20 25 35 45 C 26 = 50A 55 65 75 85 95 105 115 25 125 O TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_72N60C3(8D)11-25-09-C IXGX72N60C3H1 Fig. 22 Fig. 23 Fig. 24 Fig. 25 O Z(th)JC - [ ºC / W ] 1.00 bs ol et e Fig. 21 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 s] Pulse Width [[ms] Fig. 26 Maximum transient thermal impedance junction to case (for diode) © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: G_72N60C3(8D)11-25-09-C e et ol bs O Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.