IXGX75N250

Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = 2500V IC110 = 75A VCE(sat) ≤ 2.7V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ILRMS TC = 25°C ( Chip Capability ) TC = 110°C TC = 25°C (Lead RMS Limit) 170 75 160 A A A ICM TC = 25°C, VGE = 20V, 1ms 530 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load ICM = 200 @ 0.8 • VCES A PC TC = 25°C 780 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 10 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque ( IXGK ) Mounting Force ( IXGX ) Weight TO-264 PLUS247 G C E Tab PLUS247TM (IXGX) G C G = Gate C = Collector Tab E E = Emitter Tab = Collector Features Very High Peak Current Capability Low Saturation Voltage MOS Gate Turn-On Rugged NPT Structure Molding Epoxies meet UL 94V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 1mA, VCE = 0V 2500 VGE(th) IC = 4mA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V TJ = 125°C V 5.0 V 50 μA 5 mA IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 75A, VGE = 15V, Note 1 2.7 V IC = 150A 3.6 V © 2010 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density Applications Capacitor Discharge Pulser Circuits ±200 nA DS99826B(07/10) IXGK75N250 IXGX75N250 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 35 IC = 60A, VCE = 10V, Note 1 Cies Coes 58 pF 345 pF 110 pF Qg tr td(off) tf 410 nC 63 nC 175 nC IC = 75A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) Resistive Switching Times IC = 150A, VGE = 15V VCE = 1250V, RG = 1Ω 55 ns 225 ns 270 ns 455 ns RthJC 0.16 °C/W RthCK Note S 9000 VCE = 25V, VGE = 0V, f = 1MHz Cres Qge TO-264 AA ( IXGK) Outline 0.15 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. *Additional provision for lead-to-lead voltage isolation are required at VCE >1200V. Terminals: Back Side Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 1 = Gate 2,4 = Collector 3 = Emitter Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM (IXGX) Outline PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 Dim. 6,404,065 B1 6,534,343 6,583,505 1 - Gate 2 - Collector 3 - Emitter Millimeter Min. Max. Inches Min. Max. A A1 A2 4.83 2.29 1.91 5.21 2.54 2.16 .190 .090 .075 .205 .100 .085 b b1 b2 1.14 1.91 2.92 1.40 2.13 3.12 .045 .075 .115 .055 .084 .123 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Terminals: 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK75N250 IXGX75N250 Fig. 2. Output Characteristics @ T J = 125ºC Fig. 1. Output Characteristics @ T J = 25ºC 300 VGE = 25V 20V 300 15V VGE = 25V 20V 15V 250 15V 200 10V 200 IC - Amperes IC - Amperes 250 150 10V 150 100 100 50 50 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 VCE - Volts Fig. 3. Dependence of VCE(sat) on Junction Temperature 3.5 4 4.5 5 5.5 6 8 TJ = 25ºC VGE = 15V 7 I 1.8 C = 300A 6 1.6 VCE - Volts VCE(sat) - Normalized 3 Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 2.2 2.0 2.5 VCE - Volts 1.4 I C = 150A 1.2 5 I C = 300A 4 150A 1.0 3 0.8 I C = 75A 2 0.6 75A 1 0.4 -50 -25 0 25 50 75 100 125 6 150 8 10 TJ - Degrees Centigrade 12 14 16 18 20 22 24 26 VGE - Volts Fig. 6. Transconductance Fig. 5. Input Admittance 250 120 TJ = - 40ºC 100 g f s - Siemens IC - Amperes 200 150 100 TJ = 125ºC 25ºC - 40ºC 50 25ºC 80 125ºC 60 40 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts © 2010 IXYS CORPORATION, All Rights Reserved 7.5 8.0 8.5 9.0 0 50 100 IC - Amperes 150 200 250 IXGK75N250 IXGX75N250 Fig. 7. Gate Charge Fig. 8. Capacitance 100,000 16 I C = 75A Capacitance - PicoFarads I G = 10 mA 12 VGE - Volts f = 1MHz VCE = 1000V 14 10 8 6 4 10,000 Cies 1,000 Coes 100 Cres 2 0 10 0 50 100 150 200 250 300 350 400 450 0 5 10 15 QG - NanoCoulombs 20 25 30 35 40 VCE - Volts Fig. 10. Maximum Transient Thermal Impedance Fig. 9. Reverse-Bias Safe Operating Area 225 1.000 200 150 Z(th)JC - ºC / W IC - Amperes 175 125 100 75 50 TJ = 125ºC 25 RG = 1Ω dv / dt < 10V / ns 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXGK75N250 IXGX75N250 Fig. 12. Resistive Turn-on Rise Time vs. Collector Current Fig. 11. Resistive Turn-on Rise Time vs. Junction Temperature 600 700 VCE = 1250V 500 VCE = 1250V I 500 C TJ = 125ºC = 300A t r - Nanoseconds t r - Nanoseconds RG = 1Ω , VGE = 15V RG = 1Ω , VGE = 15V 600 400 300 I 200 C = 150A 400 300 TJ = 25ºC 200 100 100 0 0 25 35 45 55 65 75 85 95 105 115 75 125 100 125 150 175 TJ - Degrees Centigrade Fig. 13. Resistive Turn-on Switching Times vs. Gate Resistance 80 800 td(on) - - - - 75 500 60 I C = 150A 55 t f - Nanoseconds 65 I C = 300A t d(on) - Nanoseconds t r - Nanoseconds 70 600 700 600 VCE = 1250V 200 40 0 5 6 7 8 9 300 I C = 150A 300 100 4 I C = 300A 200 10 150 100 25 35 45 55 2000 tf 1600 RG = 1Ω, VGE = 15V td(off) - - - - 480 380 440 360 400 1200 320 1000 280 800 240 t f - Nanoseconds 360 TJ = 125ºC, 25ºC 200 400 160 200 120 0 125 150 175 85 95 105 115 50 125 200 225 IC - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 250 275 80 300 750 tf td(off) - - - - 675 TJ = 125ºC, VGE = 15V 340 600 VCE = 1250V 320 525 I 300 C = 150A, 300A 450 280 375 260 300 240 225 220 150 200 t d(off) - Nanoseconds t d(off) - Nanoseconds VCE = 1250V 1400 t f - Nanoseconds 1800 100 75 Fig. 16. Resistive Turn-off Switching Times vs. Gate Resistance Fig. 15. Resistive Turn-off Switching Times vs. Collector Current 75 65 TJ - Degrees Centigrade RG - Ohms 600 350 250 45 3 400 400 200 100 td(off) - - - - RG = 1Ω, VGE = 15V 500 50 2 300 450 tf 300 1 275 t d(off ) - Nanoseconds VCE = 1250V 400 250 800 TJ = 125ºC, VGE = 15V 700 225 Fig. 14. Resistive Turn-off Switching Times vs. Junction Temperature 900 tr 200 IC - Amperes 75 1 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: IXG_75N250(9P)87-10-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.