IXI859S1T/R

IXYS IXI858 / IXI859 Gate Driver with VReg and Charge Pump Regulator Features: General Description • Logic Level Gate Drive Compatible The IXI858 and IXI859 combine a power MOSFET driver, linear voltage regulator, and charge pump regulator for power supply generation in a single SOIC-8 package. The IXI858 features a 5.0V linear voltage regulator, and the IXI859 a 3.3V linear voltage regulator. These three power functions combined on the IXI858/859 target micro-controller based off-line applications. • 60mA Source / 120mA Sink Minimum Gate Drive • 5.0V or 3.3V Voltage Regulator • Charge Pump Regulator Stabilizes VCC Power Supply at 13V • UVLO Protection The IXI858 and IXI859 are designed to operate over a temperature range of -25°C to +125°C, and are available in an 8 lead SOIC package. Applications: • µController based off-line applications • Power Supply and Power Management ORDERING INFORMATION Part No. Description IXI858S1 5.0V Version IXI858S1T/R IXI859S1 3.3V Version IXI859S1T/R • Lighting Control Functional Block Diagram VCC SOIC-8 Lead Configuration VCAP 1 Vclamp Vreg UVLO 8 VSUP 7 2 + VOUT GND - 13V 4 IN Pack Quantity 100 (Tube) 2500 (Tape & Reel) 100 (Tube) 2500 (Tape & Reel) ChrgPReg 75k 6 VCC 1 8 VCAP VOUT 2 7 VSUP N/C 3 6 GND IN 4 5 GATE 8 - Lead SOIC GATE 5 Copyright © IXYS CORPORATION 2005 1 4/29/05 IXYS IXI858 / IXI859 SOIC-8 Pin Description Pin No. Pin Symbol I/O 1 VCC Supply 2 3 4 5 6 VOUT N/C IN GATE GND Output Input Output Ground 7 VSUP I/O 8 VCAP I/O Description Power input connects to a rectified high voltage source through a current limiting series resistor and filter capacitor to ground. Regulated 13 volt output when the charge pump is active. Linear Regulator Output (IXI858 = 5.0V, IXI859 = 3.3V) No Connect Gate Driver Input Gate Driver Output. Drives external power MOSFET. Ground Return Charge Pump Switch Input. Enables / disables the charge pump output. Requires a low ESR capacitor. Charge Pump Switch Output. Rectified charge pump output. Requires a low ESR capacitor. Absolute Maximum Ratings Symbol VCC VOUT VIN ISUP IPEAK PD TJ TSTG Parameter DC Supply Voltage Logic System Supply Voltage Gate Input Voltage Continuous current into VSUP pin Peak Current into VSUP Power Dissipation Maximum Junction Temperature Storage Temperature Min -0.4 -0.4 -0.4 -200 -1 -65 Max +20.0 +6.0 +6.0 +200 +1 500 +150 +150 Units V V V mA A mW o C o C Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this data sheet is not implied. Exposure of the device to the absolute maximum ratings for an extended period may degrade the device and affect its reliability. ESD Warning ESD (electrostatic discharge) sensitive device. Although the IXI858 / IXI859 feature proprietary ESD protection circuitry, permanent damage may be sustained if subjected to high energy electrostatic discharges. Proper ESD precautions are recommended to avoid performance degradation or loss of functionality. www.ixys.com 2 4/29/05 IXYS IXI858 / IXI859 Operating Range Symbol VCC ISUP IPEAK Parameter Supply Voltage Continuous Current in VSUP Pin Peak Current in VSUP Pin (tP