IXKH24N60C5

IXKH 24N60C5 IXKP 24N60C5 CoolMOS™ 1) Power MOSFET ID25 = 24 A VDSS = 600 V RDS(on) max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D Preliminary data TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C EAS EAR single pulse repetitive dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions ID = 7.9 A; TC = 25°C 600 V ± 20 V 24 16 A A 522 0.79 mJ mJ 50 V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 150 165 3 3.5 V 1 µA µA RDSon VGS = 10 V; ID = 12 A VGS(th) VDS = VGS; ID = 0.79 mA IDSS VDS = 600 V; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 12 A 40 9 13 td(on) tr td(off) tf VGS = 10 V; VDS = 400 V ID = 12 A; RG = 3.3 Ω 12 5 50 5 2.5 TVJ = 25°C TVJ = 125°C 10 100 2000 100 RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved mΩ nA • fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter 1) CoolMOS™ is a trademark of Infineon Technologies AG. pF pF 52 nC nC nC ns ns ns ns 0.5 K/W 20080523c 1-4 IXKH 24N60C5 IXKP 24N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. IS VGS = 0 V VSD IF = 12 A; VGS = 0 V 0.9 trr QRM IRM IF = 12 A; -diF/dt = 100 A/µs; VR = 400 V 390 7.5 38 max. 12 A 1.2 V ns µC A Component Symbol Conditions TVJ Tstg operating Md mounting torque Symbol Conditions Maximum Ratings TO-247 TO-220 with heatsink compound Weight TO-247 TO-220 0.8 ... 1.2 0.4 ... 0.6 Nm Nm TO-247 TO-220 typ. max. 0.25 0.50 K/W K/W 6 2 g g IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved °C °C Characteristic Values min. RthCH -55...+150 -55...+150 20080523c 2-4 IXKH 24N60C5 IXKP 24N60C5 TO-247 AD Outline Symbol A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 ØP1 TO-220 AB Outline Millimeter Min. Max. Inches Min. Max. A B 12.70 13.97 14.73 16.00 0.500 0.550 0.580 0.630 C D 9.91 3.54 10.66 4.08 0.390 0.420 0.139 0.161 E F 5.85 2.54 6.85 3.18 0.230 0.270 0.100 0.125 G H 1.15 2.79 1.65 5.84 0.045 0.065 0.110 0.230 J K 0.64 2.54 1.01 BSC 0.025 0.040 0.100 BSC M N 4.32 1.14 4.82 1.39 0.170 0.190 0.045 0.055 Q R 0.35 2.29 0.56 2.79 0.014 0.022 0.090 0.110 F N B E D A H G J Q K R L Millimeters min max 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Dim. M C Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.291 40 80 300 10V TJ = 125°C 1 2V TJ = 25°C VGS = 20 V 20 V 8V 1 2V 250 30 60 6V VGS = 10 V 8V 200 150 40 I D [A ] Ptot [ W] I D [A ] 5.5 V 6V 20 5V 100 5.5 V 4.5 V 10 20 5V 50 4.5 V 0 0 0 40 80 120 TC [°C] Fig. 1 Power dissipation 160 0 0 5 10 V [V] Fig. 2 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved DS 15 20 0 5 10 V DS 15 20 [V] Fig. 3 Typ. output characteristics 20080523c 3-4 IXKH 24N60C5 IXKP 24N60C5 0.5 1.2 TJV = 150°C 100 VDS > 2·RDS(on) max · ID ID = 12 A VGS = 10 V 6.5 V 1 5.5 V 0.4 80 0.3 60 25 °C 10 V 5V D S (o n ) R 0.6 R DS (on) [Ω] 7V [Ω] VDS = I D [A ] 6V 0.8 98% 0.2 40 typ TJ = 150 °C 0.4 0.1 20 0.2 0 0 0 10 20 30 40 0 -60 50 -20 20 60 140 180 0 2 4 T j [°C] I D [A] Fig. 4 Typ. drain-source on-state resistance characteristics of IGBT 10 100 Fig. 5 Drain-source on-state resistance 2 6 V GS 8 10 [V] Fig. 6 Typ. transfer characteristics 10 10 5 10 4 ID = 12 A pulsed 25 °C, 98% VGS = 0 V f = 1 MHz 9 8 150 °C, 98% VDS = 120 1 20V V 25 °C 10 Ciss 7 TJ =150 °C 1 40 0V 4 10 10 3 10 2 10 1 C [pF ] 5 V GS I F [A ] [V ] 6 Coss 0 3 2 Crss 1 10 -1 10 0 0 0.5 1 V SD 1.5 2 0 10 20 [V] Q Fig. 7 Forward characteristic of reverse diode Fig. 8 600 gate 30 0 100 200 [nC] 300 V Typ. gate charge DS 400 500 [V] Fig. 9 Typ. capacitances 10 700 ID = 7.9 A 0 40 0 ID = 0.75 mA 500 0.5 660 Z th J C [ K /W ] V B R (D S S ) [V ] 300 E AS [m J ] 400 620 0.2 10 D = tp/T -1 0.1 0.05 200 0.02 580 0.01 100 single pulse 0 10 540 20 60 100 140 T j [°C] 180 -60 -20 20 60 100 140 180 T j [°C] Fig. 10 Avalanche energy Fig. 11 Drain-source breakdown voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p [s] Fig. 12 Max. transient thermal impedance 20080523c 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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