IXKH35N60C5

IXKH 35N60C5 COOLMOS® * Power MOSFET ID25 = 35 A VDSS = 600 V RDS(on) max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C EAS EAR single pulse repetitive dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions ID = 11 A; TC = 25°C 600 V ± 20 V 35 25 A A 800 1.2 mJ mJ 50 V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 90 100 3 3.5 V 5 µA µA 100 nA RDSon VGS = 10 V; ID = 18 A VGS(th) VDS = VGS; ID = 1.2 mA IDSS VDS = 600 V; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 18 A 60 14 20 td(on) tr td(off) tf VGS = 10 V; VDS = 400 V ID = 18 A; RG = 3.3 Ω 10 5 60 5 2.5 TVJ = 25°C TVJ = 125°C 50 2800 130 RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved mΩ • fast COOLMOS® * power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter *COOLMOS® is a trademark of Infineon Technologies AG. pF pF 80 nC nC nC ns ns ns ns 0.35 K/W 20090209c 1-4 IXKH 35N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. IS VGS = 0 V VSD IF = 18 A; VGS = 0 V 0.9 trr QRM IRM IF = 18 A; -diF/dt = 100 A/µs; VR = 400 V 450 12 70 max. 18 A 1.2 V ns µC A Component Symbol Conditions TVJ Tstg operating Md mounting torque Symbol Conditions Maximum Ratings with heatsink compound 0.8 ... 1.2 Nm typ. max. 0.25 K/W 6 g Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved °C °C Characteristic Values min. RthCH -55...+150 -55...+150 20090209c 2-4 IXKH 35N60C5 TO-247 AD Outline Symbol A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 ØP1 Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.291 120 400 Millimeters min max 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 50 10 V TJ = 25°C VGS = 20 V 105 7V 8V TJ = 150°C 8V 10 V VGS = 20 V 6V 5.5 V 40 90 300 7V 200 30 60 I D [A ] I D [A ] Ptot [ W] 75 6V 5V 20 45 5.5 V 4.5 V 30 100 10 5V 15 4.5 V 0 0 0 40 80 120 TC [°C] Fig. 1 Power dissipation 160 0 0 5 10 V [V] Fig. 2 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved DS 15 20 0 5 10 V DS 15 20 [V] Fig. 3 Typ. output characteristics 20090209c 3-4 IXKH 35N60C5 160 0.3 0.5 TJV = 150°C ID = 18 A VGS = 10 V 0.25 5.5 V 0.4 VDS > 2·RDS(on) max · ID 25 °C 120 6.5 V 0.2 5V [Ω] VDS = 20 V DS (on) 0.15 0.2 80 98 % R R DS (on) [Ω] 7V 0.3 I D [A ] 6V TJ =150 °C typ 0.1 40 0.1 0.05 0 0 0 0 10 20 30 40 -60 50 -20 20 60 140 0 180 Fig. 4 Typ. drain-source on-state resistance characteristics of IGBT 2 12 25 °C, 98% 10 10 4 VDS = 120 V Ciss 8 1 20 V 10 3 10 2 10 1 C [pF ] 6 V GS I F [A ] [V ] 40 0V 0 10 VGS = 0 V f = 1 MHz 10 1 8 5 ID = 18 A pulsed TJ =150 °C 6 [V] GS Fig. 6 Typ. transfer characteristics Fig. 5 Drain-source on-state resistance 150 °C, 98% 10 4 V 25 °C 10 2 T j [°C] I D [A] 10 100 Coss 4 2 Crss 10 -1 10 0 0 0.5 1 V SD 1.5 2 0 10 20 30 Q [V] Fig. 7 Forward characteristic of reverse diode Fig. 8 1000 gate 40 50 0 50 100 [nC] V Typ. gate charge DS 150 200 [V] Fig. 9 Typ. capacitances 700 10 ID = 11 A 0 60 0 ID = 0.25 mA 0.5 750 660 620 V 250 -1 0.2 Z thJ C [ K /W ] [V ] B R (DS S ) 500 E AS [m J ] 10 0.1 D = tp/T 0.05 0.02 10 -2 10 -3 0.01 single pulse 580 0 540 20 60 100 140 T j [°C] Fig. 10 Avalanche energy 180 -60 -20 20 60 140 180 T j [°C] Fig. 11 Drain-source breakdown voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 100 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p [s] Fig. 12 Max. transient thermal impedance 20090209c 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.