IXKH47N60C

IXKH 47N60C CoolMOS™ 1) Power MOSFET VDSS = 600 V ID25 = 47 A RDS(on) max = 70 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C EAS EAR single pulse ID = 10 A; TC = 25°C repetitive ID = 20 A; TC = 25°C dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions 600 V ± 20 V 47 30 A A 1800 tbd mJ mJ tbd V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 60 70 RDSon VGS = 10 V; ID = ID100 c VGS(th) VDS = VGS; ID = 2 mA IDSS VDS = VDSS; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz tbd tbd Qg Qgs Qgd VGS = 0 to 10 V; VDS = 350 V; ID = 40 A 255 30 110 td(on) tr td(off) tf VGS = 10 V; VDS = 380 V ID = 47 A; RG = 4.7 Ω 20 27 111 10 2 TVJ = 25°C TVJ = 150°C RthJC c tab S S mΩ 4 V 25 250 µA µA ±100 nA • 3rd generation Superjunction power MOSFET - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating 1) CoolMOS™ is a trademark of Infineon Technologies AG. pF pF 650 nC nC nC ns ns ns ns 0.3 K/W Pulse test, t < 300 µs, duty cycle d < 2% IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080523a 1-4 IXKH 47N60C Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IS VGS = 0 V A VSD IF = 40 A; VGS = 0 V V trr QRM IRM IF = 40 A; -diF/dt = 100 A/µs; VR = 640 V ns µC A Component Symbol Conditions TVJ Tstg operating Md mounting torque Symbol Conditions Maximum Ratings °C °C 1.13 Nm Characteristic Values min. RthCH -55...+150 -55...+150 with heatsink compound Weight typ. max. tbd K/W 2.7 g TO-247 Outline Symbol A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 ØP1 Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.291 Millimeters min max 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080523a 2-4 IXKH 47N60C Fig. 1. Output Characteristics @ 25 Deg. C 50 180 VGS = 10V 6V 5V tp = 300μs 45 Fig. 2. Extended Output Characteristics @ 25 deg. C 40 140 I D - Amperes I D - Amperes 35 30 25 4.5V 20 15 120 6V 100 80 60 5V 40 10 20 4V 5 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 2 4 Fig. 3. Output Characteristics @ 125 Deg. C 50 45 10 12 14 16 18 2.8 VGS = 10V 2.5 tp = 300μs R D S (on) - Normalized 40 I D - Amperes 8 Fig. 4. RDS(on) Norm alized to ID100 Value vs. Junction Tem perature VGS = 10V 5V tp = 300μs 6 V D S - Volts V D S - Volts 35 4.5V 30 25 20 15 4V 10 2.2 1.9 I D = 30A 1.6 I D = 15A 1.3 1 0.7 5 0 0.4 0 1 2 3 4 5 6 -50 7 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID100 Value vs. ID Fig. 6. Drain Current vs. Case Tem perature 4 50 VGS = 10V 3.7 45 tp = 300μs 3.4 40 3.1 TJ = 125ºC 35 I D - Amperes R D S (on) - Normalized VGS = 10V 7V tp = 300μs 160 2.8 2.5 2.2 1.9 30 25 20 15 1.6 10 1.3 TJ = 25ºC 1 5 0.7 0 0 20 40 60 80 100 120 140 160 180 I D - Amperes IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade 20080523a 3-4 IXKH 47N60C Fig. 8. Transconductance Fig. 7. Input Adm ittance 100 120 90 80 80 60 40 TJ = 125ºC 25ºC -40ºC 20 TJ = -40ºC 25ºC 125ºC 70 g f s - Siemens I D - Amperes 100 60 50 40 30 20 10 0 0 2 2.5 3 3.5 4 4.5 5 5.5 6 0 20 40 V G S - Volts 100 10 90 9 80 8 70 7 60 50 TJ = 125ºC 30 80 100 120 Fig. 10. Gate Charge VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-ToDrain Voltage 40 60 I D - Amperes VDS = 350V I D = 40A I G = 10mA 6 5 4 3 TJ = 25ºC 20 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1.1 30 60 90 120 150 180 210 240 270 Q G - nanoCoulombs V S D - Volts Fig. 12. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 1 100000 f = 1MHz Capacitance - pF 1000 R (th) J C - (ºC/W) C iss 10000 C oss 0.1 100 C rss 0.01 10 0 10 20 30 40 50 60 70 80 90 100 V DS - Volts IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 1 10 100 1000 Pulse Width - milliseconds 20080523a 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.