IXKH70N60C5

IXKH 70N60C5 CoolMOS™ 1) Power MOSFET ID25 = 70 A VDSS = 600 V RDS(on) max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C EAS EAR single pulse repetitive dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions ID = 11 A; TC = 25°C 600 V ± 20 V 70 48 A A 1950 3 mJ mJ 50 V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 40 45 3 3.5 V 10 µA µA 100 nA RDSon VGS = 10 V; ID = 44 A VGS(th) VDS = VGS; ID = 3 mA IDSS VDS = 600 V; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 44 A 150 35 50 td(on) tr td(off) tf VGS = 10 V; VDS = 400 V ID = 44 A; RG = 3.3 Ω 30 20 100 10 2.5 TVJ = 25°C TVJ = 125°C 50 6800 320 RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved mΩ • fast CoolMOS™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter 1) CoolMOS™ is a trademark of Infineon Technologies AG. pF pF 190 nC nC nC ns ns ns ns 0.2 K/W 20090209d 1-4 IXKH 70N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. IS VGS = 0 V VSD IF = 44 A; VGS = 0 V 0.9 trr QRM IRM IF = 44 A; -diF/dt = 100 A/µs; VR = 400 V 600 17 60 max. 44 A 1.2 V ns µC A Component Symbol Conditions TVJ Tstg operating Md mounting torque Symbol Conditions Maximum Ratings with heatsink compound 0.8 ... 1.2 Nm typ. max. 0.25 K/W 6 g Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved °C °C Characteristic Values min. RthCH -55...+150 -55...+150 20090209d 2-4 IXKH 70N60C5 TO-247 AD Outline Symbol Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.291 A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 ØP1 250 700 TJ = 25°C VGS = 20 V 600 Millimeters min max 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 140 10 V 8 V 8V TJ = 150°C 10 V 120 7V 200 7V 6V VGS = 20 V 100 500 5.5 V 150 300 I D [A ] 80 I D [A ] Ptot [ W] 400 6V 100 60 5V 5.5 V 40 200 4.5 V 5V 50 20 100 4.5 V 0 0 0 40 80 120 TC [°C] Fig. 1 Power dissipation 160 0 0 5 10 V [V] Fig. 2 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved DS 15 20 0 5 10 V DS 15 20 [V] Fig. 3 Typ. output characteristics 20090209d 3-4 IXKH 70N60C5 0.16 0.12 TJV = 150°C 320 ID = 44 A VGS = 10 V 5.5 V VDS = 5 V 6V 6.5 V 7V 0.12 VDS > 2·RDS(on) max · ID 25 °C 280 0.1 240 0.08 200 I D [A ] [Ω] DS (on) 0.08 0.06 98 % 160 150 °C R R DS (on) [Ω] 20 V 120 typ TJ = 0.04 0.04 80 0.02 40 0 0 0 20 40 60 80 100 0 -60 -20 20 60 I D [A] 140 180 0 2 4 T j [°C] Fig. 4 Typ. drain-source on-state resistance characteristics of IGBT 10 100 8 10 [V] GS Fig. 6 Typ. transfer characteristics Fig. 5 Drain-source on-state resistance 3 6 V 12 10 5 ID = 11 A pulsed VGS = 0 V f = 1 MHz 10 10 4 10 3 Ciss VDS = 50 V 2 1 20 V 8 150 °C, 98% 25 °C 40 0V 6 V GS I F [A ] [V ] TJ = 150 °C C [pF ] 10 25 °C, 98% 10 1 10 2 10 1 10 0 4 2 10 Coss 0 0 0 0.5 1 V SD 1.5 2 0 50 100 Q [V] Fig. 7 Forward characteristic of reverse diode Fig. 8 2000 gate 0 150 Typ. gate charge 10 200 0 620 V E 1000 0.2 0.05 -2 0.02 580 0.01 0 540 100 140 T j [°C] Fig. 10 Avalanche energy 180 10 -60 -20 20 60 100 140 180 T j [°C] Fig. 11 Drain-source breakdown voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved D = tp/T 0.1 10 500 -1 Z thJ C [ K /W ] [V ] B R (DS S ) [m J ] 150 [V] 0.5 10 60 DS Fig. 9 Typ. capacitances 660 20 100 V ID = 0.25 mA 1500 AS 50 [nC] 700 ID = 11 A Crss single pulse -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p [s] Fig. 12 Max. transient thermal impedance 20090209d 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.