IXKK85N60C

IXKK 85N60C CoolMOS™ 1) Power MOSFET VDSS = 600 V ID25 = 85 A RDS(on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET TO-264 D G G  D S E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C EAS EAR single pulse ID = 10 A; TC = 25°C repetitive ID = 20 A; TC = 25°C dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions 600 V ± 20 V 85 55 A A 1800 1 mJ mJ 50 V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon VGS = 10 V; ID = ID100  typ. max. 30 36 VGS(th) VDS = VGS; ID = 5.4 mA IDSS VDS = VDSS; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Ciss Coss Crss VGS = 0 V; VDS = 25 V f = 1 MHz 13.6 4.4 290 Qg Qgs Qgd VGS = 0 to 10 V; VDS = 350 V; ID = 85 A 500 50 240 td(on) tr td(off) tf VGS = 13 V; VDS = 380 V ID = 85 A; RG = 1.0 Ω 20 27 110 10 2 TVJ = 25°C TVJ = 125°C RthJC  tab S mW 4 V 50 500 µA µA ±200 nA • 3rd generation CoolMOS™ 1) power MOSFET - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating 1) CoolMOS™ is a trademark of Infineon Technologies AG. nF nF pF 640 nC nC nC ns ns ns ns 0.18 K/W Pulse test, t < 300 µs, duty cycle d < 2% IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100315c 1-4 IXKK 85N60C Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IS VGS = 0 V ISM VSD IF = 85 A; VGS = 0 V trr QRM IRM IF = 85 A; -diF/dt = 200 A/µs; VR = 350 V 85 A 250 A 1.2 V 580 46 140 ns µC A Component Symbol Conditions TVJ Tstg operating Md mounting torque Symbol Conditions Maximum Ratings with heatsink compound °C °C 0.8 ... 1.2 Nm Characteristic Values min. RthCH -55...+150 -55...+150 typ. max. 0.15 K/W 10 g Weight TO-264 Outline SYM A A1 b b1 b2 C D E e L L1 L2 L3 P Q Q1 R R1 S INCHES MIN MAX .185 .209 .102 .118 .037 .055 .087 .102 .110 .126 .017 .029 1.007 1.047 .760 .799 .215 BSC .193 .201 .096 .088 .075 .083 .000 .004 .122 .138 .240 .256 .330 .346 .155 .187 .085 .093 .243 .253 MILLIMETERS MIN MAX 4.70 5.31 2.59 3.00 0.94 1.40 2.21 2.59 2.79 3.20 0.43 0.74 25.58 26.59 19.30 20.29 5.46 BSC 4.90 5.10 2.24 2.44 1.90 2.10 0.00 0.10 3.10 3.51 6.10 6.50 8.38 8.79 3.94 4.75 2.16 2.36 6.43 6.17 NOTE: 1. This drawing meets all dimension s requirement of JEDEC outline s TO-264AAexcept L, L1, L2, L3. 2. All metal surface are solder plated except trimmed area. IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100315c 2-4 IXKK 85N60C Fig. 1. Output Characteristics @ 25 Deg. C 100 80 60 4.5V 40 30 240 200 160 120 5V 40 4V 10 0 0 0 0.5 1 1.5 2 2.5 V D S - Volts 3 0 3.5 Fig. 3. Output Characteristics @ 125 Deg. C 100 R D S (on) - Normalized 50 40 30 6 8 10 V D S - Volts 12 14 16 18 VGS = 10V 2.5 4.5V 60 4 2.8 80 70 2 Fig. 4. RDS(on) Norm alized to ID100 Value vs. Junction Tem perature VGS = 10V 5V tp = 300µs 90 I D - Amperes 6V 80 20 4V 20 tp = 300µs 2.2 1.9 I D = 60A 1.6 I D = 30A 1.3 1 0.7 10 0 0.4 0 1 2 3 4 5 V D S - Volts 6 7 -50 Fig. 5. RDS(on) Norm alized to ID100 Value vs. ID -25 0 25 50 75 100 TJ - Degrees Centigrade 125 150 Fig. 6. Drain Current vs. Case Tem perature 100 4 VGS = 10V 3.7 90 tp = 300µs 3.4 80 3.1 TJ = 125ºC 70 2.8 I D - Amperes R D S (on) - Normalized VGS = 10V 7V 280 70 50 tp = 300µs 320 I D - Amperes I D - Amperes 360 VGS = 10V 6V 5V tp = 300µs 90 Fig. 2. Extended Output Characteristics @ 25 deg. C 2.5 2.2 1.9 60 50 40 30 1.6 20 1.3 TJ = 25ºC 1 10 0.7 0 0 40 80 120 160 200 240 I D - Amperes 280 320 360 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 20100315c 3-4 IXKK 85N60C Fig. 8. Transconductance Fig. 7. Input Adm ittance 240 180 210 160 140 g f s - Siemens I D - Amperes 180 150 120 90 TJ = 125ºC 25ºC -40ºC 60 100 80 60 40 30 20 0 0 2 2.5 3 3.5 4 4.5 5 5.5 6 0 V G S - Volts Fig. 9. Source Current vs. Source-ToDrain Voltage 9 160 8 140 7 120 6 100 TJ = 125ºC 60 60 90 120 150 I D - Amperes 180 210 240 10 180 80 30 Fig. 10. Gate Charge VG S - Volts I S - Amperes 200 VDS = 350V I D = 80A I G = 10mA 5 4 3 TJ = 25ºC 40 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 V S D - Volts 0.9 1 0 1.1 60 120 180 240 300 360 Q G - nanoCoulombs 420 480 540 Fig. 12. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 0.18 100000 f = 1MHz 0.16 C iss 0.14 10000 R (th) J C - (ºC/W) Capacitance - pF TJ = -40ºC 25ºC 125ºC 120 C oss 1000 100 0.12 0.1 0.08 0.06 0.04 C rss 0.02 0 10 0 10 20 30 40 50 60 70 80 90 100 V limits, - Volts IXYS reserves the right to changeDS test conditions and dimensions. © 2010 IXYS All rights reserved 1 10 100 Pulse Width - milliseconds 1000 20100315c 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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