IXKN45N80C

IXKN 45N80C CoolMOS™ 1) Power MOSFET VDSS = 800 V ID25 = 44 A RDS(on) max = 74 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S E72873 S G = Gate S = Source D = Drain S D Either source terminal at miniBLOC can be used as main or Kelvin Source Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C dV/dt VDS < VDSS; IF = 17 A; | diF/dt | < 100 Aµs EAS EAR ID = 4 A; L = 80 mH; TC = 25°C ID = 17 A; L = 3 mH; TC = 25°C Symbol Conditions 800 V ± 20 V 44 30 A A 6 V/ns 670 0.5 mJ mJ Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon VGS = 10 V; ID = I25 VGS(th) VGS = VDS; ID = 4 mA IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C  TVJ = 125°C IGSS VGS = ± 20 V; VDS = 0 V Qg Qgs Qgd td(on) tr td(off) tf typ. max. 63 74 mW 3.9 V 50 µA µA 400 nA 2.1 200 VGS = 10 V; VDS = 640 V; ID = 70 A 360 48 184 nC nC nC VGS = 10 V; VDS = 400 V ID = 70 A; RG = 1.2 Ω; TVJ = 125°C 25 15 75 10 ns ns ns ns RthJC 0.33 • miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - International standard package SOT-227 - Easy screw assembly • CoolMOS™ 1) power MOSFET 3rd generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness • fast CoolMOS™ 1) power MOSFET 3rd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating K/W 1) IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved CoolMOS™ is a trademark of Infineon Technologies AG. 20080526a -4 IXKN 45N80C Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. IS VGS = 0 V VSD IF = 65 A; VGS = 0 V trr QRM IRM IF = 80 A; -diF /dt = 400 A/µs; VR = 480 V typ. max. 60 A 0.9 1.2 V 500 45 280 800 ns µC A Component Symbol Conditions TVJ Tstg operating storage VISOL IISOL < 1 mA, 50/60 Hz Md mounting torque terminal connection torque Symbol Conditions Maximum Ratings with heatsink compound Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved °C °C 2500 V~ 1.5 1.5 Nm Nm Characteristic Values min. RthCH -55...+150 -55...+125 typ. max. 0.1 K/W 30 g 20080526a -4 IXKN 45N80C miniBLOC, SOT-227 B SYM A B C D E F G H J K L M N O P Q R S T U V W 280 400 INCHES MIN MAX 1.240 1.255 .307 .323 .161 .169 .161 .169 .161 .169 .587 .595 1.186 1.193 1.489 1.505 .460 .481 .351 .378 .030 .033 .496 .506 .990 1.001 .078 .084 .195 .235 1.045 1.059 .155 .174 .186 .191 .968 .987 -.002 .004 .130 .180 .780 .830 140 260 20 V 10 V 8V 7V VGS = 20 V 240 120 10 V 220 300 MILLIMETERS MIN MAX 31.50 31.88 7.80 8.20 4.09 4.29 4.09 4.29 4.09 4.29 14.91 15.11 30.12 30.30 37.80 38.23 11.68 12.22 8.92 9.60 0.76 0.84 12.60 12.85 25.15 25.42 1.98 2.13 4.95 5.97 26.54 26.90 3.94 4.42 4.72 4.85 24.59 25.07 -.05 .10 3.30 4.57 19.81 21.08 TJ = 150°C TJ = 25°C 200 6.5 V 100 8V 200 6V 160 7V ID [A] ID [A] Ptot [ W] 180 140 120 100 6V 80 100 80 5.5 V 60 5V 40 60 40 4.5 V 20 5V 4V 20 0 0 40 80 120 160 0 0 5 10 TC [°C] Fig. 1 Power dissipation 20 25 VDS [V] Fig. 2 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 15 30 0 0 5 10 15 20 25 30 VDS [V] Fig. 3 Typ. output characteristics 20080526a -4 IXKN 45N80C 260 0.4 375 TJ = 150°C 350 ID = 44 A VGS = 10 V 200 0.3 5V 4.5 V 5.5 V 6V 180 6.5 V RDS(on) ;7= 275 250 225 7V 8V 10 V 20 V 200 175 160 ID [A] RDS(on) [m7] 4V 98% 0.2 typ 150°C 120 80 0.1 60 40 20 0 5 10 15 20 25 ID [A] 0 -60 35 30 -20 20 60 100 140 0 180 0 2 4 6 8 TJ [°C] Fig. 4 Typ. drain-source on-state resistance 10 140 100 150 125 25°C 220 325 300 VDS > 2x ID x RDS(on) 240 Fig. 5 Drain-source on-state resistance 12 14 16 18 20 Fig. 6 Typ. transfer characteristics 16 2 10 VGS [V] 10 5 10 4 10 3 10 2 VGS = 0 V, f = 1 MHz 14 12 0.8 VDS max T j = 150 °C typ 0 C [pc] VGS [V] 10 T j = 25 °C typ 10 0.2 VDS max 1 IF [A] 10 Ciss 8 6 Coss Crss T j = 25 °C (98%) T j = 150 °C (98%) 4 10 1 10 0 2 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 0 2.8 3 0 80 160 240 400 480 QG [nC] VSD [V] Fig. 7 Forward characteristic of reverse diode 560 640 0 100 200 300 400 500 600 700 800 VDS [V] Fig. 8 Typ. gate charge 700 Fig. 9 Typ. capacitances 980 650 960 ID = 4 A 600 940 550 920 500 900 V(BR)DSS [V] 450 EAS [mJ] 320 400 350 300 250 880 860 840 820 800 200 150 780 100 760 50 740 0 25 50 75 100 TJ [°C] Fig. 10 Avalanche energy 125 150 720 -60 -20 20 100 140 180 TJ [°C] Fig. 11 Drain-source breakdown voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 60 20080526a -4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.