IXKP20N60C5

IXKH 20N60C5 IXKP 20N60C5 CoolMOS™ 1) Power MOSFET ID25 = 20 A VDSS = 600 V RDS(on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C EAS EAR single pulse repetitive dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions ID = 6.6 A; TC = 25°C 600 V ± 20 V 20 13 A A 435 0.66 mJ mJ 50 V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 180 200 3 3.5 V 1 µA µA RDSon VGS = 10 V; ID = 10 A VGS(th) VDS = VGS; ID = 1.1 mA IDSS VDS = 600 V; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 10 A 32 8 11 td(on) tr td(off) tf VGS = 10 V; VDS = 400 V ID = 10 A; RG = 3.3 Ω 10 5 50 5 2.5 TVJ = 25°C TVJ = 125°C 10 100 1520 72 RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved mΩ nA • fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter 1) CoolMOS™ is a trademark of Infineon Technologies AG. pF pF 45 nC nC nC ns ns ns ns 0.60 K/W 20080523d 1-4 IXKH 20N60C5 IXKP 20N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. IS VGS = 0 V VSD IF = 10 A; VGS = 0 V 0.9 trr QRM IRM IF = 10 A; -diF/dt = 100 A/µs; VR = 400 V 340 5.5 33 max. 10 A 1.2 V ns µC A Component Symbol Conditions TVJ Tstg operating Md mounting torque Symbol Conditions Maximum Ratings TO-247 TO-220 with heatsink compound Weight TO-247 TO-220 0.8 ... 1.2 0.4 ... 0.6 Nm Nm TO-247 TO-220 typ. max. 0.25 0.50 K/W K/W 6 2 g g IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved °C °C Characteristic Values min. RthCH -55...+150 -55...+150 20080523d 2-4 IXKH 20N60C5 IXKP 20N60C5 TO-247 AD Outline Symbol A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 ØP1 TO-220 AB Outline Millimeter Min. Max. Inches Min. Max. A B 12.70 13.97 14.73 16.00 0.500 0.550 0.580 0.630 C D 9.91 3.54 10.66 4.08 0.390 0.420 0.139 0.161 E F 5.85 2.54 6.85 3.18 0.230 0.270 0.100 0.125 G H 1.15 2.79 1.65 5.84 0.045 0.065 0.110 0.230 J K 0.64 2.54 1.01 BSC 0.025 0.040 0.100 BSC M N 4.32 1.14 4.82 1.39 0.170 0.190 0.045 0.055 Q R 0.35 2.29 0.56 2.79 0.014 0.022 0.090 0.110 F N B E D A H G J Q K R L 250 Millimeters min max 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Dim. M C Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.291 75 35 TJ = 125°C TJ = 25°C VGS = 20 V 10 V 60 200 20 V 30 10 V 7V VGS = 8 V 8V 6V 25 5.5 V 7V 45 150 Ptot [ W] I D [A ] I D [A ] 20 6V 15 5.5 V 10 30 100 5V 4.5 V 15 50 5V 5 4.5 V 0 0 0 40 80 120 TC [°C] Fig. 1 Power dissipation 160 0 0 5 10 V [V] Fig. 2 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved DS 15 20 0 5 10 15 20 V DS [V] Fig. 3 Typ. output characteristics 20080523d 3-4 IXKH 20N60C5 IXKP 20N60C5 1.2 VDS = 1 80 0.6 6.5 V TJV = 150°C ID = 10 A VGS = 10 V 6V 5.5 V 5V VDS > 2·RDS(on) max · ID 0.5 25 °C 10 V 60 0.4 0.8 I D [A ] [Ω] DS (on) 0.3 40 98 % R R DS (on) [Ω] 7V 0.6 0.4 0.2 0.2 0.1 TJ = 150 °C typ 20 0 0 0 0 10 20 30 -60 40 -20 20 60 140 0 180 2 Fig. 4 Typ. drain-source on-state resistance characteristics of IGBT 10 10 VDS 1=20120 V V 25 °C 1 10 4 10 3 10 2 10 1 40 0V 7 Ciss TJ =150 °C C [pF ] 5 V GS I F [A ] [V ] 6 4 10 10 VGS = 0 V f = 1 MHz 8 150 °C, 98% 8 [V] 5 9 25 °C, 98% GS Fig. 6 Typ. transfer characteristics Fig. 5 Drain-source on-state resistance 2 6 V ID = 10 A pulsed 10 4 T j [°C] I D [A] 10 100 Coss 0 3 2 Crss 1 10 -1 10 0 0 0.5 1 V SD 1.5 2 0 10 20 [V] Q Fig. 7 Forward characteristic of reverse diode Fig. 8 500 gate 30 0 100 200 [nC] V 300 DS 400 500 [V] Fig. 9 Typ. capacitances Typ. gate charge 700 10 ID = 6.6 A 0 40 0 ID = 0.25 mA 0.5 400 660 620 V E AS B R (DS S ) [m J ] [V ] 300 Z thJ C [ K /W ] 0.2 200 D = tp/T 0.1 10 -1 0.05 0.02 0.01 580 single pulse 100 0 10 540 20 60 100 140 T j [°C] Fig. 10 Avalanche energy 180 -60 -20 20 60 140 180 T j [°C] Fig. 11 Drain-source breakdown voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 100 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p [s] Fig. 12 Max. transient thermal impedance 20080523d 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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