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IXLF19N250A

IXLF19N250A

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    i4-PaK™5_3Pin

  • 描述:

    IGBT 2500V 32A 250W I4PAC

  • 数据手册
  • 价格&库存
IXLF19N250A 数据手册
IXLF 19N250A IC25 = 32 A VCES = 2500 V VCE(sat) = 3.2 V tf = 250 ns High Voltage IGBT in High Voltage ISOPLUS i4-PACTM 5 1 1 2 5 2 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 19 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff 2500 V ± 20 V 32 19 A A 70 1200 A V 250 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 3.2 4.7 5 3.9 V V 8 V 0.15 mA mA 500 nA 0.2 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 1500 V; IC = 19 A VGE = ±15 V; RG = 47 Ω 100 50 600 250 15 30 ns ns ns ns mJ mJ Cies Coes Cres VCE = 25 V; VGE = 0 V; f = 1 MHz 2.28 103 43 nF pF pF QGon VCE = 1500V; VGE = 15 V; IC = 19 A 142 nC RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved • High Voltage IGBT - substitute for high voltage MOSFETs with significantly lower voltage drop and comparable switching speed - substitute for high voltage thyristors with voltage control of turn on & turn off - substitute for electromechanical trigger and discharge relays • ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline - UL registered E72873 Applications • switched mode power supplies • DC-DC converters • resonant converters • laser generators, x ray generators • discharge circuits 0.5 K/W 0527 Symbol 1-4 IXLF 19N250A Component Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions dS,dA dS,dA C pin - E pin pin - backside metal RthCH with heatsink compound -55...+150 -55...+125 °C °C 2500 V~ 20...120 N Characteristic Values min. typ. max. 7.0 5.5 Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved mm mm 0.15 K/W 9 g 0527 Symbol Dimensions in mm (1 mm = 0.0394") 2-4 IXLF 19N250A 100 A IC 50 VGE = 17 V TJ = 25°C 80 13 V VGE = 17 V TJ = 125°C A 15 V 15 V 40 IC 13 V 11 V 60 30 40 20 11 V 20 9V 10 9V 0 0 0 1 2 3 4 5 6 7 8 9 0 V 1 2 3 4 5 6 VCE Fig. 1 Typ. Output Characteristics 8 9 V Fig. 2 Typ. Output Characteristics 10000 80 VCE = 20 V A 70 f = 1 Mhz pF 60 Capacitance 50 40 30 Coes 100 TJ = 125°C 20 Cies 1000 Cres 10 TJ = 25°C 10 0 6 7 8 9 10 11 12 13 0 14 V 15 10 20 V 30 40 VCE VGE Fig. 3 Typ. Transfer Characteristics Fig. 4 Capacitance curves 80 20 V A VCE = 1500 V IC = 19 A TJ = 25°C 15 VGE ICM 60 10 40 5 20 RG = 47Ω TJ = 125°C VCEK < VCES 0 0 0 50 100 QG 150 nC Fig. 5 Typ. Gate Charge characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 0 400 800 1200 1600 2000 2400 V VCE Fig. 6 Reverse Biased Safe Operating Area RBSOA 0527 IC 7 VCE 3-4 IXLF 19N250A 50 60 200 VCE = 1500 V VGE = ±15 V mJ 40 ns 160 RG = 47 Ω TJ = 125°C Eon t tr 30 Eoff mJ 50 VCE = 1500 V VGE = ±15 V 40 RG = 47 Ω TJ = 125°C 120 td(on) 20 1200 ns 1000 800 t 30 600 td(off) 80 20 10 40 Eon 0 0 0 10 20 30 40 10 tf Eoff 0 A 10 20 IC 35 mJ 30 Eon 25 350 ns 300 td(on) VCE = 1500 V VGE = ±15 V IC = 19 A TJ = 125°C 250 t tr 20 2000 ns mJ Eoff Eoff 30 100 5 1500 VCE = 1500 V VGE = ±15 V IC = 19 A TJ = 125°C 150 Eon 0 0 50 100 150 200 Ω 250 RG t td(off) 1000 10 500 tf 50 0 40 A 40 20 10 30 IC Fig. 8 Typ. turn off energy and switching times versus collector current 200 15 200 0 0 Fig. 7 Typ. turn on energy and switching times versus collector current 400 0 0 0 50 100 150 200 Ω 250 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig. 10 Typ. turn off energy and switching times versus gate resistor 1 K/W ZthJC 0.1 single pulse 0.01 0.001 0.01 IXLF19N250A 0.1 1 s 10 t IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 0527 Fig. 11 Typ. transient thermal impedance 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXLF19N250A 价格&库存

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