IXSN35N100U1

IGBT with Diode IXSN 35N100U1 VCES IC25 VCE(sat) = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 Symbol Test Conditions V CES TJ = 25°C to 150°C 1 Maximum Ratings 1000 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ V GES V GEM A Continuous ±20 V Transient ±30 V I C25 T C = 25°C 38 A I C90 T C = 90°C 25 A I CM T C = 25°C, 1 ms 50 A SSOA (RBSOA) V GE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH ICM = 50 @ 0.8 VCES A tSC (SCSOA) V GE = 15 V, VCE = 0.6 • V CES, TJ = 125°C RG = 22 Ω, non repetitive 10 µs PC T C = 25°C 205 W VISOL 50/60 Hz IISOL ≤ 1 mA 2500 3000 V~ V~ -40 ... +150 °C TJM 150 °C Tstg -40 ... +150 °C 2 4 3 1 = Emitter, 2 = Gate, 3 = Collector 4 = Kelvin Emitter Features International standard package miniBLOC (ISOTOP) compatible Isolation voltage 3000 V~ 2nd generation HDMOSTM process - for high short circuit SOA Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - short trr and IRM Low collector-to-case capacitance (< 50 pF) - reducesd RFI Low package inductance (< 10 nH) - easy to drive and to protect ● ● ● t = 1 min t=1s TJ ● ● ● Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight Symbol 1 V 1000 Md miniBLOC, SOT-227 B 30 Test Conditions BVCES IC = 6 mA, VGE = 0 V VGE(th) IC = 10 mA, VCE = VGE I CES V CE = 0.8 • VCES V GE = 0 V I GES V CE = 0 V, VGE = ±20 V VCE(sat) IC g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 V ● ● Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies ● ● 5 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V 8 V 750 15 µA mA ±500 nA 3.5 V ● ● ● Advantages Space savings Easy to mount with 2 screws High power density ● ● ● IXYS reserves the right to change limits, test conditions and dimensions. © IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 93005C (7/94) IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSN 35N100U1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 20 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I C(on) VGE = 15 V 20 S 300 A 4.5 nF 0.5 nF C res 0.09 nF Qg 180 nC 45 nC 120 nC 80 ns Cies C oes Q ge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Q gc Inductive load, TJ = 125°°C tri IC = IC90, VGE = 15 V, VCE = 0.6 • VCES, Ron = 6.8 Ω, Roff = 22 Ω tfi Eon Remarks: Switching times may increase for VCE (Clamp) > 0.6 • VCES, higher TJ or increased RG Eoff Inches Min. Max. A B C D E F G H 31.5 7.8 4.0 4.1 4.1 14.9 30.1 38.0 31.7 8.2 4.3 4.3 15.1 30.3 38.2 1.241 0.307 0.158 0.162 0.162 0.587 1.186 1.497 1.249 0.323 0.169 0.169 0.595 1.193 1.505 ns 800 ns 2000 ns 3.2 mJ 6.8 mJ J K 11.8 8.9 12.2 9.1 0.465 0.351 0.481 0.359 0.61 K/W L M N O P 0.75 12.6 25.2 1.95 - 0.85 12.8 25.4 2.05 5.0 0.030 0.496 0.993 0.077 - 0.033 0.504 1.001 0.081 0.197 0.05 RthCK Millimeter Min. Max. 150 RthJC Reverse Diode (FRED) M4 screws (4x) supplied Dim. td(on) td(off) 10 miniBLOC, SOT-227 B K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I RM trr IF = IC90, VGE = 0 V, -diF /dt = 480 A/µs TJ = 125°C, VR = 360 V RthJC 150 2.3 V 33 A ns 0.7 K/W IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSN 35N100U1 250 TJ = 25°C A IC 200 15 V 150 A IC 120 15 V 13 V TJ = 25°C 10 TJ = 25°C V VCE(sat) 8 IC = 12.5 A IC = 25 A IC = 50 A 13 V 150 90 6 11 V 100 11 V 50 60 4 30 2 9V 9V 0 0 0 5 10 15 V CE Fig. 1 Typ. V 20 output characteristics 0 0 VCE(sat) Fig. 2 1.1 1.0 0.9 6 V 8 Typ. output characteristics 6 Fig. 3 8 10 12 VGE 14 V 16 Typ. on-state characteristics 1.2 VGE (th ) TJ = 25°C 300 A norm . 4 VCE 350 IC 1.2 2 IC = 10 mA nor m . 1.1 VCE = 30 V 250 1.0 200 0.9 150 0.8 100 0.7 50 0.6 IC = 50 A IC = 25 A IC = 12.5 A 0.8 0.7 -50 Fig. 4 0 0 50 TJ 100 °C 150 Typ. temp. dependence of VCE(sat) 16 V 14 V GE 4 6 8 10 Fig. 5 Typ. transfer 12 14 V 16 VGE characteristics 12 50 Fig. 6 Typ. temp. TJ 100 °C 150 dependence of norm. VGE(th) A Cies C 10 TJ = 125°C dV/dt < 6 V/ns RG = 22Ω IC 10 8 0 100 10 nF IG = 40 mA IC = 1 A VCE = 25 V 0.5 -50 Coes 1 1 6 Cres 4 0.1 2 0 0.1 0 Fig. 7 50 100 QG 150 nC 200 Typ. turn-on gate charge characteristics, VGE = f(QG) 0.01 0 Fig. 8 Typ. 5 10 15 capacitances 20 V 25 VCE 0 Fig. 9 200 400 600 800 V 1000 VCE Reverse biased safe operating area © IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSN 35N100U1 10 50 14 A mJ 12 IRM mJ 40 IC = 50 A IC = 25 A 8 IRM IRM 10 Eoff 30 6 8 Eon IRM 4 IC = 50 A IC = 25 A 6 20 IC = 12.5 A 4 10 2 2 IC = 12.5 A 0 0 0 Fig. 10 10 mJ 25 50 75 100 Typ. turn-on energy per pulse TJ 0 125 °C 150 0 25 50 75 100 125 °C 150 TJ Fig. 11 65,5 A IRM Typ. turn-off energy per pulse 14 mJ IC = 50 A 12 50 8 IRM IRM IC = 50 A 6 37.5 8 IC = 25 A Eon 4 10 IC = 25 A Eoff 6 25 IRM IC = 12.5 A 4 12.5 2 2 IC = 12.5 A 0 0 0 Fig. 12 10 20 30 40 RGon 0 50 0 Typ. turn-on energy per pulse 10 Fig. 13 20 30 40 RGoff 50 Typ. turn-off energy per pulse 1 K/W Diode IGBT Single pulse 0.1 ZthJC 0.01 0.0001 0.001 0.01 0.1 s 10 1 t Fig. 14 Forward characteristic of reverse diode Fig. 15 Transient thermal resistance junction to case of IGBT and Diode IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 © IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627