IXSN50N60BD3

IXSN 50N60BD2 IXSN 50N60BD3 HIGH Speed IGBT with HiPerFRED Short Circuit SOA Capability Buck & boost configurations IGBT Preliminary data ...BD2 ...BD3 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A IC90 TC = 90°C ICM TC = 25°C, 1 ms SSOA VGE= 15 V, TVJ = 125°C, RG = 22 W (RBSOA) Clamped inductive load, L = 30 mH 50 A 200 A ICM = 100 @ 0.8 VCES A 10 ms 250 W 600 V 60 A tSC VGE = 15 V, VCE = 360 V, TJ = 125°C (SCSOA) RG = 22 W, non repetitive PC TC = 25°C Diode VRRM IFAVM TC = 70°C; rectangular, d = 50% IFRM tP z 0.8 • VCES, higher TJ or increased RG M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. 150 300 ns E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 150 300 ns G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 3.3 6.0 mJ J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 td(on) Inductive load, TJ = 125°C 70 ns L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 t ri IC = IC90, VGE = 15 V, L = 100 mH 70 ns N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 Eon VCE = 0.8 VCES, RG = Roff = 2.7 W 2.5 mJ P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 230 ns 230 ns R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 4.8 mJ T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 tfi Eoff RthJC 0.50 K/W RthCK 0.05 Reverse Diode (FRED) Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions IR TVJ = 25°C VR= VRRM TVJ = 150°C IF = 60 A Pulse test, t £ 300 ms, duty cycle d £ 2 % VF IRM t rr typ. IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 540 V, TJ = 100°C IF = 1 A, -di/dt = 50 A/ms, VR = 30 V RthJC © 2000 IXYS All rights reserved K/W 35 max. 650 2.5 1.75 2.40 uA mA V V 8.0 A ns 0.85 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-5 IXSN 50N60BD2 IXSN 50N60BD3 160 100 VGE = 15V TJ = 25°C TJ = 25°C 13V VGE = 15V 120 IC - Amperes IC - Amperes 80 60 11V 40 13V 80 11V 40 20 9V 9V 7V 0 0 2 4 6 8 0 0 10 4 8 16 20 VCE - Volts VCE - Volts Figure 1. Saturation Voltage Characteristics Figure 2. Extended Output Characteristics 1.6 100 VGE = 15V TJ = 125°C IC = 100A 13V VCE (sat) - Normalized 80 IC - Amperes 12 60 11V 40 9V 20 1.4 VGE = 15V 1.2 1.0 IC = 50A 0.8 IC = 25A 0.6 7V 0.4 25 0 0 2 4 6 8 10 50 75 VCE - Volts 100 125 TJ - Degrees C Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of VCE(sat) 10000 100 f = 1Mhz VCE = 10V Ciss Capacitance - pF 80 IC - Amperes 150 60 40 TJ = 125°C 1000 Coss 100 20 Crss T J = 25°C 10 0 4 6 8 10 VGE - Volts Figure 5. Admittance Curves © 2000 IXYS All rights reserved 12 14 16 0 5 10 15 20 25 30 35 40 VCE-Volts Figure 6. Capacitance Curves 3-5 IXSN 50N60BD2 IXSN 50N60BD3 3.0 24 TJ = 125°C RG = 10
20 TJ = 125°C 20 E(OFF) 1.5 12 1.0 8 0.5 E(ON) - millijoules 16 3 2 0 20 40 60 IC = 50A E(ON) 1 5 E(OFF) E(ON) IC =25A 0 0 100 80 10 E(OFF) 4 0.0 15 IC = 100A E(ON) 0 E(OFF) - millijoules 2.0 E(OFF) E(OFF) - milliJoules E(ON) - millijoules 2.5 4 E(ON) 10 20 30 40 50 0 60 RG - Ohms IC - Amperes Figure 7. Dependence of EON and EOFF on IC. Figure 8. Dependence of EON and EOFF on RG. 600 20 IC =50A VCE = 250V 100 IC - Amperes 16 12 8 TJ = 125°C 10 RG = 6.2
dV/dt < 5V/ns 1 4 0.1 0 0 25 50 75 100 125 150 175 0 100 200 300 400 500 600 VCE - Volts Qg - nanocoulombs Figure 9. Gate Charge Figure 10. Turn-off Safe Operating Area ZthJC (K/W) 1 0.1 D=0.5 D=0.2 0.01 D=0.1 D=0.05 D=0.02 D = Duty Cycle D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-5 IXSN 50N60BD2 IXSN 50N60BD3 60 A 1000 50 IF 30 TVJ= 100°C nC VR = 300V TVJ= 100°C VR = 300V A 25 800 Qr 40 IF= 60A IF= 30A IF= 15A IRM IF= 60A IF= 30A 20 600 TVJ=150°C 30 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 0 1 0 100 3 V 2 5 A/ms 1000 -diF/dt VF Fig. 13 Reverse recovery charge Qr versus -diF/dt Fig. 12 Forward current IF versus VF 2.0 90 Kf 200 400 ms 1000 600 A/ 800 -diF/dt Fig. 14 Peak reverse current IRM versus -diF/dt 1.00 TVJ= 100°C IF = 30A V VFR 15 trr 1.5 0 20 TVJ= 100°C VR = 300V ns 0 µs tfr 0.75 V FR tfr 80 IF= 60A IF= 30A IF= 15A 1.0 I RM 10 0.50 5 0.25 70 0.5 Qr 0.0 60 0 40 80 120 °C 160 0 TVJ 200 400 800 A/ ms 1000 600 0 0 200 400 -diF/dt Fig. 15 Dynamic parameters Qr, IRM versus TVJ Fig. 16 Recovery time trr versus -diF/dt 0.00 ms 1000 600 A/ 800 diF/dt Fig. 17 Peak forward voltage VFR and tfr versus diF/dt 1 Constants for ZthJC calculation: K/W i 1 2 3 0.1 ZthJC Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0396 0.01 0.001 0.00001 DSEC 60-06B 0.0001 0.001 0.01 s 0.1 1 t © 2000 IXYS All rights reserved 5-5