IXST30N60BD1

High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Short Circuit SOA Capability Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 55 A IC90 TC = 90°C 30 A ICM TC = 25°C, 1 ms 110 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES ICM = 60 A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 W, non repetitive 10 ms PC TC = 25°C 200 W Maximum Ratings -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Mounting torque 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247/TO-268 TO-264 Symbol Test Conditions BVCES IC = 750 mA, VGE = 0 V 600 VGE(th) IC = 2.5 mA, VCE = VGE 4 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) VGE = 15 V 300 °C 6/4 10 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C IC = IC90 IC = IC25 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved = 600 V = 55 A = 2.0 V = 140 ns VCE(sat) tfi Symbol Md VCES IC25 V 7 V 200 3 mA mA ±100 nA 2.0 2.7 V V TO-247AD (IXSH) G C E TO-268 (D3) (IXST) C G E TO-264 (IXSK) G G = Gate E = Emitter C E C = Collector TAB = Collector Features • International standard packages: JEDEC TO-247, TO-264& TO-268 • Short Circuit SOA capability • Medium freqeuncy IGBT and antiparallel FRED in one package • New generation HDMOSTM process Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Space savings (two devices in one package) • Easy to mount with 1 screw (isolated mounting screw hole) • Surface mountable, high power case style • Reduces assembly time and cost • High power density 98517A (7/00) 1-5 IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % C ies Coes C res VCE = 25 V, VGE = 0 V, f = 1 MHz Qg Qge Qgc IC = IC90, VGE = 15 V, VCE = 0.5 VCES td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = IC90; VGE = 15 V VCE = 0.8 VCES; RG = 4.7 W Note 1. Inductive load, TJ = 125°C IC = IC90; VGE = 15 V VCE = 0.8 VCES; RG = 4.7 W Note 1 RthJC RthCK RthCK TO-247 TO-264 Reverse Diode (FRED) S 3100 240 30 pF pF pF 100 30 38 nC nC nC 30 30 150 140 1.5 ns ns ns ns mJ 270 270 2.5 30 35 0.5 270 250 2.5 ns ns mJ ns ns mJ 0.25 0.15 0.62 K/W K/W K/W Test Conditions VF IF = IC90, VGE = 0 V Note 2 IRM IF = 50A; VGE = 0 V; TJ = 100 °C VR = 100 V; -diF/dt = 100 A/ms TJ = 150 °C TJ = 25 °C 2 IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C 35 1.7 2.5 V V 2.5 A 50 ns .09 K/W RthJC Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % TO-268AA (IXST) (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-264 AA (IXSK) Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol t rr 10 TO-247 AD (IXSH) Outline Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-5 IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Fig.1 Saturation Characteristics Fig.2 Output Characterstics 200 100 VGE = 15V TJ = 25°C TJ = 25°C VGE = 15V 13V 160 IC - Amperes 80 IC - Amperes 11V 13V 11V 60 40 9V 120 80 7V 9V 40 20 7V 5V 0 0 0 1 2 3 4 0 5 2 4 8 10 VCE - Volts VCE - Volts Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage Fig.4 Temperature Dependence of Output Saturation Voltage 1.6 120 VGS=15V TJ = 125°C VCE (sat) - Normalized 80 11V 60 40 IC = 60A VGE = 15V 13V 100 IC - Amperes 6 9V 20 1.4 1.2 IC = 30A 1.0 IC = 15A 0.8 7V 0.6 0 0 2 4 6 8 25 10 50 75 VCE - Volts 125 Fig.6 Temperature Dependence of Breakdown and Threshold Voltage 10000 VCE = 10V f = 1Mhz Capacitance - pF IC - Amperes 120 100 80 60 TJ = 125°C 40 150 TJ - Degrees C Fig.5 Input Admittance 140 100 20 Ciss 1000 Coss 100 Crss TJ = 25°C 10 0 4 6 8 10 VGE - Volts © 2000 IXYS All rights reserved 12 14 16 0 5 10 15 20 25 30 35 40 VCE-Volts 3-5 IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 1.5 7.5 2.0 8 TJ = 125°C E(ON) E(OFF) 0.5 2.5 E(ON) - millijoules 5.0 IC = 60A 1.5 6 E(ON) 1.0 4 E(ON) IC = 30A E(OFF) 0.5 2 E(ON) E(OFF) IC = 15A 0.0 0 20 40 0.0 0.0 80 60 0 0 10 Fig.9 Gate Charge Characteristic Curve 30 40 50 Fig.10 Turn-Off Safe Operating Area 100 IC =30A VCE = 300V IC - Amperes 12 VGE - Volts 20 RG - Ohms IC - Amperes 15 E(OFF) - millijoules 1.0 E(OFF) - milliJoules RG = 10
E(ON) - millijoules E(OFF) TJ = 125°C 9 6 TJ = 125°C 10 RG = 4.7
dV/dt < 5V/ns 1 3 0 0.1 0 25 50 75 100 125 0 Qg - nanocoulombs 100 200 300 400 500 600 VCE - Volts Fig.11 Transient Thermal Resistance 1 D=0.5 ZthJC (K/W) D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D = Duty Cycle Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-5 IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 60 A 1000 50 IF TVJ= 100°C VR = 300V A 25 800 Qr 600 IF= 60A IF= 30A IF= 15A IRM IF= 60A IF= 30A IF= 15A 40 TVJ=150°C 30 TVJ= 100°C VR = 300V nC 20 30 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 0 1 2 5 0 100 3 V A/ms 1000 -diF/dt VF Fig. 12 Forward current IF versus VF Fig. 13 Reverse recovery charge Qr versus -diF/dt 2.0 200 ms 1000 600 A/ 800 -diF/dt 400 Fig. 14 Peak reverse current IRM versus -diF/dt trr I RM tfr 0.75 tfr 80 IF= 60A IF= 30A IF= 15A µs V FR VFR 15 1.0 1.00 TVJ= 100°C V IF = 30A TVJ= 100°C VR = 300V ns Kf 0 20 90 1.5 0 10 0.50 5 0.25 70 0.5 Qr 0.0 60 0 40 80 120 °C 160 0 TVJ 200 400 800 A/ ms 1000 600 0 0 200 400 -diF/dt Fig. 15 Dynamic parameters Qr, IRM versus TVJ Fig. 16 Recovery time trr versus -diF/dt 1 K/W 0.00 ms 1000 600 A/ 800 diF/dt Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 0.1 ZthJC Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 s 0.1 1 t Fig. 18 Transient thermal resistance junction to case © 2000 IXYS All rights reserved 5-5