IXSX50N60AU1

Preliminary data VCES = 600 V IXSX50N60AU1 = 75 A IXSX50N60AU1S I C25 VCE(sat) = 2.7 V IGBT with Diode Combi Pack Short Circuit SOA Capability Symbol TO-247 Hole-less SMD (50N60AU1S) Test Conditions C (TAB) G Maximum Ratings E VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C 50 A ICM TC = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, R G = 22 Ω Clamped inductive load, L = 30 µH ICM = 100 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive 10 µs PC TC = 25°C C (TAB) G W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 6 g 300 °C Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Test Conditions l l l l l Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 3 mA, VGE = 0 V 600 VGE(th) IC = 4 mA, VCE = VGE 4 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V V l l l TJ = 25°C TJ = 125°C 8 V 750 15 µA mA ±100 nA 2.7 V l Hole-less TO-247 package for clip mounting High current rating Guaranteed Short Circuit SOA capability High frequency IGBT and antiparallel FRED in one package Low V CE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages l l © 1997 IXYS All rights reserved C = Collector, TAB = Collector Applications l BVCES E Features l Symbol C G = Gate, E = Emitter, l 300 TJ TO-247 Hole-less (50N60AU1) Space savings (two devices in one package) High power density 97512 (5/97) IXSX50N60AU1 Symbol Test Conditions gfs I C = I C90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 20 23 190 Qg Q ge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IXSX50N60AU1S Inductive load, TJ = 25°°C IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = 2.7 Ω S 250 60 nC 88 120 nC 70 ns 220 ns 400 Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = 2.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG nC 45 200 Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG ns 600 ns 6 mJ 70 ns 230 ns 4.5 mJ 340 ns 400 ns 7 mJ RthJC TO-247 HOLE-LESS 0.42 K/W RthCK 0.15 K/W TO-247 HOLE-LESS SMD Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I RM trr IF = IC90, VGE = 0 V, -diF /dt = 480 A/µs VR = 360 V TJ = 125°C IF = 1 A; -di/dt = 200 A/µs; VR = 30 V TJ = 25°C RthJC 19 175 35 1.8 V 33 A ns ns 50 0.75 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXSX50N60AU1 Fig.1 Saturation Characteristics 80 TJ = 25°C Fig.2 Output Characterstics 200 13V VGE = 15V T J = 25°C 180 70 VGE = 15V 160 60 11V 50 IC - Amperes IC - Amperes IXSX50N60AU1S 40 30 20 9V 3 4 80 11V 60 9V 7V 0 0 2 100 20 7V 1 13V 120 40 10 0 140 5 0 2 4 6 VCE - Volts Fig. 4 VCE(sat) - Normalized 8 7 VCE - Volts VGE=15V 1.4 6 5 IC = 80A 4 IC = 40A 3 2 IC = 20A 1 9 10 IC = 80A 1.3 1.2 1.1 IC = 40A 1.0 0.9 IC = 20A 0.8 0 8 Temperature Dependence of Output Saturation Voltage 1.5 T J = 25°C 9 10 12 14 16 18 20 VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 8 11 12 13 14 0.7 -50 15 -25 0 VGE - Volts 25 50 75 100 125 150 TJ - Degrees C Fig.5 Input Admittance Fig.6 Temperature Dependence of Breakdown and Threshold Voltage 1.3 80 VCE = 10V BV / V GE(th) - Normalized 70 IC - Amperes 60 50 40 TJ = 25°C 30 TJ = 125°C 20 TJ = - 40°C 10 0 4 5 6 7 8 9 VGE - Volts © 1997 IXYS All rights reserved 10 11 12 13 BVCES 1.2 IC = 3mA 1.1 1.0 0.9 VGE8th) 0.8 0.7 -50 IC = 4mA -25 0 25 50 75 TJ - Degrees C 100 125 150 IXSX50N60AU1 Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 1000 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 12 1000 10 T J = 125°C IC = 50A T J = 125°C RG = 10Ω 800 500 6 tfi 250 3 0 600 400 4 200 2 0 10 20 30 40 50 60 70 6 tfi 0 80 Eoff - millijoules E off 8 Eoff tfi - nanoseconds 9 Eoff - millijoules tfi - nanoseconds 750 0 IXSX50N60AU1S 0 0 10 20 IC - Amperes 30 40 50 RG - Ohms Fig.9 Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area 1000 15 IC = 50A V CE = 480V 100 T J = 125°C IC - Amperes VGE - Volts 12 9 6 RG = 22Ω 10 dV/dt < 6V/ns 1 0.1 3 0.01 0 0 50 100 150 200 250 0 100 Qg - nCoulombs 200 300 400 500 600 700 VCE - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 Diode 0.1 IGBT Single Pulse 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Time - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXSX50N60AU1 Fig.13 180 20 1000 T J = 125°C 160 120 100 TJ = 100°C 80 60 TJ = 150°C 40 0 0.5 800 12 600 8 400 4 TJ = 25°C 20 0 1.0 1.5 2.0 2.5 200 tfr 0 200 400 Voltage Drop - Volts 1.4 VFR IF = 60A 16 140 VFR - Volts Current - Amperes Peak Forward Voltage VFR and Forward Recovery Time tfr 600 800 1000 0 1200 diF /dt - A/µs Fig.14 Junction Temperature Dependence off IRM and Qr Fig.15 Reverse Recovery Chargee 5 TJ = 100°C VR = 350V Qr - nanocoulombs Normalized IRM / Qr 1.2 1.0 0.8 IRM 0.6 Qr 0.4 4 I = 60A F 3 2 1 0.2 0.0 0 0 40 80 120 160 1 10 TJ - Degrees C Fig.17 Reverse Recovery Time 80 800 T J = 100°C TJ = 100°C VR = 350V VR = 350V IF = 60A trr - nanoseconds IRM - Amperes 1000 diF /dt - A/µs Fig.16 Peak Reverse Recovery Current 60 100 40 max 20 0 IF = 60A 600 400 200 0 200 400 600 diF /dt - A/µs © 1997 IXYS All rights reserved 800 1000 0 200 400 diF /dt - A/µs 600 tfr - nanoseconds Fig.12 Typical Forward Voltage Drop IXSX50N60AU1S