IXSX50N60BD1

IGBT with Diode IXSK 50N60BD1 IXSX 50N60BD1 VCES IC25 VCE(sat) = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C 50 A ICM TC = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH ICM = 100 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive 10 ms PC TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque 0.9/6 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions g 300 °C Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 3 mA, VGE = 0 V 600 VGE(th) IC = 4 mA, VCE = VGE 4 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC V TJ = 25°C TJ = 125°C = IC90; VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 10 2.2 8 V 350 5 mA mA ±100 nA 2.5 V G C E TO-264 AA (IXSK) G G = Gate, E = Emitter, C E C = Collector, TAB = Collector Features • International standard package JEDEC TO-264 AA, and hole-less TO-247 package for clip mounting • Guaranteed Short Circuit SOA capability • High frequency IGBT and antiparallel FRED in one package • Latest generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Space savings (two devices in one package) • Easy to mount with 1 screw (isolated mounting screw hole) • Reduces assembly time and cost 98619 (4/99) 1-5 IXSK 50N60BD1 IXSX 50N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % IC(on) VGE = 15 V, VCE = 10 V 16 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc 23 S 160 A 3850 pF 440 pF 50 pF 167 nC 45 nC Dim. 88 nC A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T td(on) Inductive load, TJ = 25°C 70 ns t ri IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W 70 ns td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 150 300 ns 150 300 ns 3.3 6.0 mJ 70 Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG TO-264 AA Outline ns 70 ns 2.5 mJ 230 ns 230 ns 4.8 mJ RthJC Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM (IXSX) 0.42 K/W RthCK 0.15 Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C RthJC © 2000 IXYS All rights reserved K/W 2 35 2.5 V 2.5 A ns 0.75 K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 2-5 IXSK 50N60BD1 IXSX 50N60BD1 160 100 VGE = 15V TJ = 25°C TJ = 25°C 13V VGE = 15V 120 IC - Amperes IC - Amperes 80 60 11V 40 13V 80 11V 40 20 9V 9V 7V 0 0 2 4 6 8 0 0 10 4 8 16 20 VCE - Volts VCE - Volts Figure 1. Saturation Voltage Characteristics Figure 2. Extended Output Characteristics 1.6 100 VGE = 15V TJ = 125°C IC = 100A 13V VCE (sat) - Normalized 80 IC - Amperes 12 60 11V 40 9V 20 1.4 VGE = 15V 1.2 1.0 IC = 50A 0.8 IC = 25A 0.6 7V 0.4 25 0 0 2 4 6 8 10 50 75 VCE - Volts 100 125 TJ - Degrees C Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of VCE(sat) 10000 100 f = 1Mhz VCE = 10V Ciss Capacitance - pF 80 IC - Amperes 150 60 40 TJ = 125°C 1000 Coss 100 20 Crss T J = 25°C 10 0 4 6 8 10 VGE - Volts Figure 5. Admittance Curves © 2000 IXYS All rights reserved 12 14 16 0 5 10 15 20 25 30 35 40 VCE-Volts Figure 6. Capacitance Curves 3-5 IXSK 50N60BD1 IXSX 50N60BD1 3.0 24 TJ = 125°C RG = 10
20 TJ = 125°C 20 E(OFF) 1.5 12 1.0 8 0.5 E(ON) - millijoules 16 3 2 0 20 40 60 IC = 50A E(ON) 1 5 E(OFF) E(ON) IC =25A 0 0 100 80 10 E(OFF) 4 0.0 15 IC = 100A E(ON) 0 E(OFF) - millijoules 2.0 E(OFF) E(OFF) - milliJoules E(ON) - millijoules 2.5 4 E(ON) 10 20 30 40 50 0 60 RG - Ohms IC - Amperes Figure 7. Dependence of EON and EOFF on IC. Figure 8. Dependence of EON and EOFF on RG. 600 20 IC =50A VCE = 250V 100 IC - Amperes 16 12 8 TJ = 125°C 10 RG = 6.2
dV/dt < 5V/ns 1 4 0.1 0 0 25 50 75 100 125 150 175 0 100 200 300 400 500 600 VCE - Volts Qg - nanocoulombs Figure 10. Turn-off Safe Operating Area Figure 9. Gate Charge ZthJC (K/W) 1 0.1 D=0.5 D=0.2 0.01 D=0.1 D=0.05 D=0.02 D = Duty Cycle D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-5 IXSK 50N60BD1 IXSX 50N60BD1 60 A 1000 50 IF 30 TVJ= 100°C nC VR = 300V 25 800 Qr 600 IF= 60A IF= 30A IF= 15A IRM IF= 60A IF= 30A IF= 15A 40 TVJ=150°C TVJ= 100°C VR = 300V A 20 30 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 0 1 0 100 3 V 2 5 A/ms 1000 -diF/dt VF Fig. 13 Reverse recovery charge Qr versus -diF/dt Fig. 12 Forward current IF versus VF 2.0 90 Kf 200 400 ms 1000 600 A/ 800 -diF/dt Fig. 14 Peak reverse current IRM versus -diF/dt 1.00 TVJ= 100°C V IF = 30A VFR 15 trr 1.5 0 20 TVJ= 100°C VR = 300V ns 0 µs tfr 0.75 V FR tfr 80 IF= 60A IF= 30A IF= 15A 1.0 I RM 10 0.50 5 0.25 70 0.5 Qr 0.0 60 0 40 80 120 °C 160 0 TVJ 200 400 800 A/ ms 1000 600 0 0 200 400 -diF/dt Fig. 15 Dynamic parameters Qr, IRM versus TVJ Fig. 16 Recovery time trr versus -diF/dt 0.00 ms 1000 600 A/ 800 diF/dt Fig. 17 Peak forward voltage VFR and tfr versus diF/dt 1 Constants for ZthJC calculation: K/W i 1 2 3 0.1 ZthJC Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0396 0.01 0.001 0.00001 DSEC 60-06B 0.0001 0.001 0.01 s 0.1 1 t Fig. 18 Transient thermal resistance junction to case © 2000 IXYS All rights reserved 5-5