IXTA05N100

High Voltage Power MOSFET IXTA05N100HV IXTA05N100 IXTP05N100 VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = =  1000V 750mA  17 TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 750 mA IDM TC = 25C, Pulse Width Limited by TJM 3 A IA EAS TC = 25C TC = 25C 1 100 A mJ dv/dt IS  IDM, VDD  VDSS, TJ 150C 3 V/ns PD TC = 25C 40 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in 3.0 2.5 2.5 g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-220 TO-263 TO-263HV TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features       High Voltage Package (TO-263HV) Fast Switching Times Avalanche Rated Rds(on) HDMOSTM Process Rugged Polysilicon Gate Cell structure Extended FBSOA Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 1000 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = 10V, ID = 375mA, Note 1 © 2014 IXYS CORPORATION, All rights reserved   V 4.5 V Applications 100 nA  25 A 500 A  17 High Power Density Space Savings  Switch-Mode and Resonant-Mode Power Supplies Flyback Inverters DC Choppers  DS98736F(5/14) IXTA05N100HV IXTA05N100 IXTP05N100 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 500mA, Note 1 0.55 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 1A RG = 47 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 1A Qgd 0.93 S 260 pF 22 pF 8 pF 11 ns 19 ns 40 ns 28 ns 7.8 nC 1.4 nC 4.1 nC PIN: 1 - Gate 2,4 - Source 3 - Drain 3.1 C/W RthJC RthCS TO-263AA Outline (TO-220) 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 750 mA ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IF = IS, -di/dt = 100A/s VR = 100V, VGS = 0V 710 3 A 1.5 V ns TO-220AB Outline Note 1: Pulse test, t  300s, duty cycle, d  2%. TO-263HV Outline Pins: 1 - Gate 3 - Source 2 - Drain PIN: 1 - Gate 2 - Source 3 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA05N100HV IXTA05N100 IXTP05N100 Fig. 2. Output Characteristics @ TJ = 125ºC Fig. 1. Output Characteristics @ TJ = 25ºC 0.9 1.6 VGS = 10V 8V 1.4 0.7 1.2 I D - Amperes 7V I D - Amperes VGS = 10V 7V 6V 0.8 1.0 6V 0.8 0.6 0.6 5.5V 0.5 0.4 0.3 5.5V 0.4 5V 0.2 5V 0.2 0.1 4.5V 0.0 0.0 0 5 10 15 20 25 30 0 5 10 VDS - Volts 15 20 25 30 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 375mA Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 375mA Value vs. Drain Current 2.6 3.0 VGS = 10V VGS = 10V 2.4 2.6 TJ = 125ºC RDS(on) - Normalized RDS(on) - Normalized 2.2 2.2 1.8 I D = 750mA 1.4 I D = 375mA 2.0 1.8 1.6 1.4 1.0 1.2 0.6 TJ = 25ºC 1.0 0.8 0.2 -50 -25 0 25 50 75 100 125 0.0 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 I D - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 1.1 0.8 1.0 0.7 0.8 0.5 0.7 I D - Amperes I D - Amperes 0.9 0.6 0.4 0.3 0.6 0.5 TJ = 125ºC 25ºC - 40ºC 0.4 0.3 0.2 0.2 0.1 0.1 0.0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2014 IXYS CORPORATION, All rights reserved 100 125 150 3.0 3.5 4.0 4.5 VGS - Volts 5.0 5.5 6.0 6.5 IXTA05N100HV IXTA05N100 IXTP05N100 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 1.6 2.4 TJ = - 40ºC 1.4 2.0 25ºC I S - Amperes g f s - Siemens 1.2 1.0 125ºC 0.8 0.6 1.6 1.2 0.8 TJ = 125ºC 0.4 TJ = 25ºC 0.4 0.2 0.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.4 0.45 0.5 0.55 I D - Amperes 0.6 0.65 0.7 0.75 0.8 0.85 0.9 VSD - Volts Fig. 9. Gate Charge Fig. 10. Capacitance 10 1,000 f = 1 MHz VDS = 500V 9 8 Capacitance - PicoFarads I D = 1A I G = 1mA VGS - Volts 7 6 5 4 3 C iss 100 Coss 10 Crss 2 1 1 0 0 1 2 3 4 5 6 7 0 8 5 10 QG - NanoCoulombs 15 20 25 30 35 40 VDS - Volts Fig. 12. Forward-Bias Safe Operating Area @ T C = 75ºC Fig. 11. Forward-Bias Safe Operating Area @ T C = 25ºC 10 10 RDS(on) Limit RDS(on) Limit 25µs 100µs 1ms 0.1 10ms 1 I C - Amperes I C - Amperes 1 100µs 1ms 0.1 10ms 100ms TJ = 150ºC TC = 25ºC Single Pulse TJ = 150ºC TC = 75ºC Single Pulse DC 0.01 100ms DC 0.01 10 100 1,000 VCE - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 VCE - Volts 1,000 IXTA05N100HV IXTA05N100 IXTP05N100 Fig. 13. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 10 1 0.1 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2014 IXYS CORPORATION, All rights reserved IXYS REF: T_05N100(1T) 5-13-14-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.