IXTA08N100D2

IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Depletion Mode MOSFET N-Channel VDSX ID(on) RDS(on) D = >  1000V 800mA 21  TO-252 (IXTY) G S G D (Tab) S TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25C to 150C VGSX Maximum Ratings G 1000 V Continuous 20 V VGSM Transient 30 V PD TC = 25C 60 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in. 0.35 2.50 3.00 g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 S D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 25A 1000 VGS(off) VDS = 25V, ID = 25A - 2.0 IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS= - 5V RDS(on) VGS = 0V, ID = 400mA, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 - 4.0 V Advantages V • Easy to Mount • Space Savings • High Power Density 50 nA 1 A 15 A TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 21 800  mA Applications • • • • • • Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100182C(9/17) IXTY08N100D2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 330 VDS = 30V, ID = 400mA, Note 1 Ciss Coss tr td(off) tf pF 24 pF 6.5 pF 28 ns 57 ns 34 ns 48 ns 14.6 nC 1.2 nC 8.3 nC 0.50 2.08 C/W C/W VGS = 5V, VDS = 500V, ID = 400mA RG = 10 (External) VGS = 5V, VDS = 500V, ID = 400mA Qgd RthJC RthCS 325 Resistive Switching Times Qg(on) Qgs mS VGS = -10V, VDS = 25V, f = 1MHz Crss td(on) 560 TO-220 IXTA08N100D2 IXTP08N100D2 Safe-Operating-Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 800V, ID = 45mA, TC = 75C, Tp = 5s Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD IF = 800mA, VGS = -10V, Note 1 trr IRM QRM IF = 800mA, -di/dt = 100A/s VR = 100V, VGS = -10V 36 W Characteristic Values Min. Typ. Max. 0.8 1.03 7.40 3.80 1.3 V μs A μC Note 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 o o Fig. 1. Output Characteristics @ TJ = 25 C 0.8 VGS = 5V 2V 1V 0.7 VGS = 5V 2V 1V 2.0 1.8 0.6 1.6 I D - Amperes 0V 0.5 I D - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25 C 2.2 0.4 - 1V 0.3 1.4 1.2 0V 1.0 0.8 0.6 0.2 - 2V 0.1 - 1V 0.4 0.2 0.0 - 2V 0.0 0 2 4 6 8 10 12 14 0 10 20 30 o 60 70 80 Fig. 4. Drain Current @ TJ = 25 C 1E-01 VGS = 5V 1V VGS = - 3.00V 1E-02 - 3.25V 0V 0.6 0.5 - 1V I D - Amperes I D - Amperes 50 o Fig. 3. Output Characteristics @ TJ = 125 C 0.8 0.7 40 VDS - Volts VDS - Volts 0.4 0.3 0.2 1E-03 - 3.50V 1E-04 - 3.75V 1E-05 - 4.00V 1E-06 - 4.25V 1E-07 - 4.50V - 2V 0.1 - 3V 0.0 1E-08 0 5 10 15 20 25 30 0 100 200 300 400 VDS - Volts 500 600 700 800 900 1000 1100 1200 VDS - Volts o Fig. 5. Drain Current @ TJ = 100 C Fig. 6. Dynamic Resistance vs. Gate Voltage 1.E+11 1.E-01 ∆VDS = 700V - 100V VGS = - 3.25V 1.E-02 1.E+10 - 3.50V - 3.75V - 4.00V 1.E-04 R O - Ohms I D - Amperes 1.E+09 1.E-03 1.E+08 o TJ = 25 C 1.E+07 - 4.25V 1.E-05 - 4.50V 1.E-06 o TJ = 100 C 1.E+06 1.E+05 0 100 200 300 400 500 600 700 800 VDS - Volts © 2017 IXYS CORPORATION, All Rights Reserved 900 1000 1100 1200 -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 VGS - Volts -3.4 -3.2 -3.0 -2.8 IXTY08N100D2 Fig. 8. RDS(on) Normalized to ID = 0.4A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.6 2.6 VGS = 0V VGS = 0V 5V 2.4 I D = 0.4A 2.2 RDS(on) - Normalized RDS(on) - Normalized 2.2 IXTA08N100D2 IXTP08N100D2 1.8 1.4 1.0 2.0 o 1.8 TJ = 125 C 1.6 1.4 1.2 1.0 0.6 0.8 0.2 o TJ = 25 C 0.6 -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 TJ - Degrees Centigrade 0.8 1.0 1.2 1.4 1.6 I D - Amperes Fig. 9. Input Admittance Fig. 10. Transconductance 1.4 1.2 VDS = 30V VDS = 30V 1.2 o TJ = - 40 C 1.0 g f s - Siemens I D - Amperes 1.0 0.8 o TJ = 125 C 0.6 o 25 C o - 40 C 0.4 0.8 o 25 C o 125 C 0.6 0.4 0.2 0.2 0.0 0.0 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 0.0 0.2 0.4 VGS - Volts Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature 1.3 1.0 1.2 1.4 Fig. 12. Forward Voltage Drop of Intrinsic Diode VGS(off) @ VDS = 25V VGS = -10V 2.0 I S - Amperes BV / VGS(off) - Normalized 0.8 2.8 2.4 1.2 0.6 I D - Amperes 1.1 BVDSX @ VGS = - 5V 1.0 1.6 1.2 o TJ = 125 C o TJ = 25 C 0.8 0.9 0.4 0.0 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Fig. 13. Capacitance Fig. 14. Gate Charge 1,000 5 VDS = 500V I D = 400mA 3 Ciss I G = 1mA 2 100 VGS - Volts Capacitance - PicoFarads 4 Coss 10 1 0 -1 -2 -3 Crss -4 f = 1 MHz -5 1 0 5 10 15 20 25 30 35 0 40 2 4 VDS - Volts Fig. 15. Forward-Bias Safe Operating Area 8 10 12 14 16 Fig. 16. Forward-Bias Safe Operating Area o @ TC = 75oC @ TC = 25 C 10.00 10.00 RDS(on) Limit RDS(on) Limit 25μs 100μs 1ms 10ms 0.10 100ms 1.00 I D - Amperes 1.00 I D - Amperes 6 QG - NanoCoulombs 25μs 100μs 1ms 0.10 10ms DC o TJ = 150 C o 100ms TJ = 150 C o TC = 25 C Single Pulse DC o TC = 75 C Single Pulse 0.01 0.01 10 100 1,000 10 100 VDS - Volts 1,000 VDS - Volts Fig. 17. Maximum Transient Thermal Impedance Z(th)JC - K / W 10 1 0.1 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_08N100D2(1C)8-25-09 IXTY08N100D2 TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 A oP 4 H 0.34 [8.7] 6.50MIN BOTTOM VIEW E D1 D H IXTA08N100D2 IXTP08N100D2 L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source