IXTA08N120P

PolarTM Power MOSFET IXTA08N120P IXTP08N120P VDSS ID25 RDS(on) = 1200V = 0.8A  25  N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 0.8 A IDM TC = 25C, pulse width limited by TJM 1.8 A IA EAS TC = 25C TC = 25C 0.8 80 A mJ dV/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 50 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-263 TO-220 D (Tab) TO-220 (IXTP) G D S G = Gate S = Source       BVDSS VGS = 0V, ID = 250μA 1200 VGS(th) VDS = VGS, ID = 100μA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V 50 nA 5 A 100 A TJ = 125C © 2018 IXYS CORPORATION, All rights reserved 20.5 25.0 High Power Density Easy to Mount Space Savings Applications V 4.5 International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages  Characteristic Values Min. Typ. Max. D = Drain Tab = Drain Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D (Tab) DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Discharge Circiuts in Lasers, Spark Igniters, RF Generators  High Voltage Pulse Power Applications    DS99868B(06/18) IXTA08N120P IXTP08N120P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max VDS = 30V, ID = 0.5 • ID25, Note 1 0.38 VGS = 0V, VDS = 25V, f = 1MHz Crss Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd td(on) tr td(off) tf C2 S Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 50 (External) 333 pF 20 pF 4.7 pF 14.0 nC 2.0 nC 8.2 nC 20 ns 26 ns 55 ns 24 ns A E1 L1 D1 1 2 L2 3 b b2 A1 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] 2.5 C/W RthJC RthCS E D Ciss Coss 0.63 TO-263 Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 0.8 A ISM Repetitive, Pulse Width Limited by TJM 2.4 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 0.8A, -di/dt = 100A/μs, VR = 100V TO-220 Outline E A oP A1 H1 Q D2 D 900 ns D1 E1 A2 EJECTOR PIN L1 L Note: 1. Pulse test, t  300s, duty cycle, d  2%. e 3X b c e1 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA08N120P IXTP08N120P o o Fig. 1. Extended Output Characteristics @ TJ = 25 C Fig. 2. Output Characteristics @ TJ = 125 C 0.8 1.2 VGS = 10V 7V 1.0 VGS = 10V 6V 0.7 I D - Amperes I D - Amperes 0.6 0.8 6V 0.6 0.4 0.5 0.4 0.3 5V 0.2 5V 0.2 0.1 0.0 0.0 0 3 6 9 12 15 18 21 24 27 30 0 33 5 10 15 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 0.4A Value vs. Junction Temperature 25 30 35 40 Fig. 4. RDS(on) Normalized to ID = 0.4A Value vs. Drain Current 3.0 2.6 VGS = 10V 2.6 VGS = 10V 2.4 o TJ = 125 C 2.2 2.2 RDS(on) - Normalized RDS(on) - Normalized 20 VDS - Volts I D = 0.8A 1.8 I D = 0.4A 1.4 1.0 2.0 1.8 1.6 1.4 1.2 o 0.6 TJ = 25 C 1.0 0.2 0.8 -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 TJ - Degrees Centigrade 0.8 1.0 1.2 Fig. 6. Input Admittance Fig. 5. Maximum Drain Current vs. Case Temperature 1.0 0.9 0.9 0.8 0.8 0.7 0.7 0.6 I D - Amperes I D - Amperes 0.6 I D - Amperes 0.5 0.4 0.3 0.6 TJ = 125 C 0.5 25 C o - 40 C o o 0.4 0.3 0.2 0.2 0.1 0.1 0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2018 IXYS CORPORATION, All rights reserved 100 125 150 3.0 3.5 4.0 4.5 VGS - Volts 5.0 5.5 6.0 6.5 IXTA08N120P IXTP08N120P Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 2.4 o TJ = - 40 C 1.0 2.0 o 25 C 0.6 I S - Amperes g f s - Siemens 0.8 o 125 C 0.4 1.6 1.2 o TJ = 125 C 0.8 0.2 o 0.4 0.0 TJ = 25 C 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.4 0.5 0.6 I D - Amperes 0.8 0.9 Fig. 10. Gate Charge Fig. 9. Capacitance 10 1,000 9 Capacitance - PicoFarads 0.7 VSD - Volts VDS = 600V I D = 0.4A 8 C iss I G = 1mA 7 VGS - Volts 100 C oss 10 6 5 4 3 2 C rss f = 1 MHz 1 0 1 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 QG - NanoCoulombs VDS - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - K / W 10 1 0.1 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_08N120P(1C) 4-02-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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