IXTA110N055T2

IXTA110N055T2 IXTP110N055T2 TrenchT2TM Power MOSFET VDSS ID25 = =  RDS(on) N-Channel Enhancement Mode Avalanche Rated 55V 110A  6.6m TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 55 V VDGR TJ = 25C to 175C, RGS = 1M 55 V VGSM Transient 20 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 110 300 A A IA TC = 25C 50 A EAS TC = 25C 400 mJ PD TC = 25C 180 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Md Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 2.5 3.0 g g G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier 175°C Operating Temperature High Current Handling Capability ROHS Compliant High Performance Trench Technology for extremely low RDS(on)        Advantages High Power Density Easy to Mount Space Savings   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 55 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V Applications 4.0 V             200 nA 2 A 200 A TJ = 150C RDS(on) VGS = 10V, ID = 25A, Notes 1 & 2  5.5 6.6 m Automotive Engine Control Synchronous Buck Converter (for Notebook SystemPower & General Purpose Point & Load)  DC/DC Converters  High Current Switching Applications  Power Train Management  Distributed Power Architecture   © 2018 IXYS CORPORATION, All Rights Reserved DS99955B(7/18) IXTA110N055T2 IXTP110N055T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 VDS = 10V, ID = 55A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 30V, ID = 25A RG = 5 (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 25A Qgd E 49 S 3060 pF 497 pF 105 pF 18 ns 25 ns 40 ns 23 ns 57 nC 16 nC 11 nC C2 A E1 L1 D1 D 1 2 L2 3 A1 b b2 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 60.12 [3.0] 0.10 [2.5] 0.06 [1.6] 0.82 C/W RthJC RthCS TO-263 Outline TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 110 A ISM Repetitive, Pulse Width Limited by TJM 300 A VSD trr IRM QRM IF = 25A, VGS = 0V, Note 1 0.84 IF = 50A, VGS = 0V, -di/dt = 100A/s, VR = 27V 1.00 TO-220 Outline E A oP A1 V 38 ns 2.4 A 46 nC H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L ee Notes: 1. Pulse test, t  300s; duty cycle, d  2%. 3X b c e1 e1 3X b2 1 - Gate 2,4 - Drain 3 - Source 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA110N055T2 IXTP110N055T2 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 350 VGS = 15V 10V 9V 8V 100 VGS = 15V 9V 80 250 7V I D - Amperes I D - Amperes 10V 300 60 6V 40 200 8V 150 7V 100 20 6V 50 5V 5V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 1 2 3 4 2.2 VGS = 15V 10V 9V 8V 7 8 9 10 VGS = 10V 2.0 1.8 80 7V RDS(on) - Normalized I D - Amperes 6 Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 100 5 VDS - Volts VDS - Volts 60 6V 40 I D = 110A 1.6 I D = 55A 1.4 1.2 1.0 20 5V 0.8 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 VDS - Volts 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 120 VGS = 10V 15V 2.6 o TJ = 175 C 100 2.2 80 I D - Amperes RDS(on) - Normalized 50 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current 3.0 25 1.8 1.4 60 40 1.0 20 o TJ = 25 C 0.6 0 0 50 100 150 200 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA110N055T2 IXTP110N055T2 Fig. 7. Input Admittance Fig. 8. Transconductance 100 70 o TJ = - 40 C 90 60 80 g f s - Siemens I D - Amperes 70 60 50 40 o TJ = 150 C o 50 25 C 40 150 C o 30 o 25 C 30 20 o - 40 C 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 10 20 30 40 VGS - Volts 60 70 80 90 100 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 300 VDS = 28V 9 250 I D = 55A 8 I G = 10mA 7 200 VGS - Volts I S - Amperes 50 I D - Amperes 150 100 o TJ = 150 C 6 5 4 3 2 o 50 TJ = 25 C 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 5 10 15 20 25 30 35 40 45 50 55 60 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 10,000 25μs 100 1,000 I D - Amperes Capacitance - PicoFarads RDS(on) Limit Ciss Coss 100 100μs 1ms 10 Crss o TJ = 175 C o TC = 25 C Single Pulse f = 1 MHz 10 10ms 100ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXTA110N055T2 IXTP110N055T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 27 26 RG = 5ΩVGS = 10V o VDS = 30V 25 24 I D = 50A 23 22 TJ = 25 C 25 t r - Nanoseconds t r - Nanoseconds 26 24 RG = 5Ω ,VGS = 10V VDS = 30V 23 22 o TJ = 125 C I D = 25A 21 21 20 20 25 35 45 55 65 75 85 95 105 115 25 125 30 35 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 29 tr td(on) 65 26 tf o 23 I D = 50A, 25A 22 23 21 22 20 21 19 20 t f - Nanoseconds t r - Nanoseconds 25 18 5 6 7 8 9 10 11 12 13 14 25 45 I D = 25A, 50A 24 35 23 25 22 15 25 35 45 55 RG - Ohms tf td(off) 95 105 115 15 125 tf 55 42 o TJ = 125 C 38 o 34 TJ = 25 C t f - Nanoseconds 24.0 45 55 I D = 25A I D = 50A 35 45 25 22.5 35 30 22.0 26 25 30 35 40 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 45 50 15 25 5 6 7 8 9 10 RG - Ohms 11 12 13 14 15 t d(off) - Nanoseconds 46 65 VDS = 30V t d(off) - Nanoseconds 24.5 td(off) o TJ = 125 C, VGS = 10V 50 VDS = 30V 23.5 75 54 RG = 5Ω, VGS = 10V t f - Nanoseconds 85 65 58 23.0 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 26.0 25.0 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 25.5 55 VDS = 30V t d(off) - Nanoseconds 24 t d(on) - Nanoseconds 26 td(off) RG = 5Ω, VGS = 10V 26 25 VDS = 30V 24 50 27 TJ = 125 C, VGS = 10V 27 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 27 28 40 I D - Amperes TJ - Degrees Centigrade IXTA110N055T2 IXTP110N055T2 Fig. 19. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_110N055T2 (V3) 7-10-18-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.