IXTA110N055T7

Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA110N055T7 RDS(on) = 55 V = 110 A Ω ≤ 7.0 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ VGSM Maximum Ratings 55 55 V V Transient ± 20 V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 110 300 A A IAR EAS TC = 25° C TC = 25° C 25 750 A mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤175° C, RG = 5 Ω 3 V/ns PD TC = 25° C 230 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 3 g TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Weight Symbol Test Conditions (TJ = 25° C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 55 VGS(th) VDS = VGS, ID = 100 µA 2.0 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C VGS = 10 V, ID = 25 A, Note 1 RDS(on) © 2006 IXYS CORPORATION All rights reserved V 5.5 4.0 V ± 200 nA 2 250 7.0 µA µA mΩ TO-263 (7-lead) (IXTA..7) 1 7 Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain (TAB) Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS99680 (11/06) IXTA110N055T7 Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 0.5 ID25, Note 1 Typ. 38 65 S 3080 pF Ciss Coss TO-263 (7-lead) (IXTA...7) Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz Crss Max. 560 pF 140 pF td(on) Resistive Switching Times 20 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 30 ns td(off) RG = 5 Ω (External) 40 ns tf 24 ns Qg(on) 67 nC 17.5 nC 15 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd 0.65 °C/W RthJC Pins: 1 - Gate 2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain Source-Drain Diode Symbol Test Conditions TJ = 25° C unless otherwise specified) Min. Characteristic Values Typ. Max. IS VGS = 0 V 110 A ISM Pulse width limited by TJM 300 A VSD IF = 25 A A, VGS = 0 V, Note 1 1.0 V t rr IF = 25 A, -di/dt = 100 A/µs 70 ns VR = 25 V, VGS = 0 V Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTA110N055T7 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 110 350 VGS = 10V VGS = 10V 9V 8V 7V 100 90 80 250 I D - Amperes I D - Amperes 9V 300 70 60 50 6V 40 8V 200 7V 150 6V 100 30 20 5V 50 5V 10 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 2 4 6 8 14 16 18 20 2.4 110 VGS = 10V 9V 8V 7V 100 90 2.0 RDS(on) - Normalized 70 60 6V 50 40 30 VGS = 10V 2.2 80 I D - Amperes 12 Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 5V 1.8 I D = 110A 1.6 I D = 55A 1.4 1.2 1.0 20 0.8 10 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 3 120 VGS = 10V 15V - - - - 2.8 2.6 110 TJ = 175ºC 100 90 2.4 2.2 I D - Amperes RDS(on) - Normalized 10 VDS - Volts VDS - Volts 2 1.8 1.6 80 70 External Lead Current Limit for TO-263 & TO-220 60 50 40 TJ = 25ºC 1.4 30 1.2 20 1 10 0 0.8 0 40 80 120 160 200 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 240 280 320 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA110N055T7 Fig. 8. Transconductance Fig. 7. Input Admittance 90 180 TJ = - 40ºC 160 140 70 120 g f s - Siemens I D - Amperes 80 TJ = -40ºC 25ºC 150ºC 100 80 25ºC 60 50 150ºC 40 60 30 40 20 20 10 0 0 3 3.5 4 4.5 5 5.5 6 6.5 0 7 20 40 60 VGS - Volts 100 120 140 160 180 Fig. 10. Gate Charge 300 10 270 9 240 8 210 7 VGS - Volts I S - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 180 150 120 TJ = 150ºC 90 80 I D - Amperes VDS = 27.5V I D = 25A I G = 10mA 6 5 4 3 60 2 TJ = 25ºC 1 30 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 1.8 10 20 30 40 50 60 70 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 C iss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz C oss 0.10 C rss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA110N055T7 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 31 31 RG = 5Ω 30 29 28 27 26 25 I D = 40A 24 23 TJ = 25ºC 29 VDS = 27.5V t r - Nanoseconds t r - Nanoseconds 30 VGS = 10V RG = 5Ω 28 VGS = 10V 27 VDS = 27.5V 26 25 24 23 I D = 20A TJ = 125ºC 22 22 21 21 25 35 45 55 65 75 85 95 105 115 20 125 22 24 26 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 38.0 70 30.5 I D = 40A 28.0 I D = 20A 25.5 40 23.0 30 20.5 20 7 9 RG = 5Ω, VGS = 10V 25.0 24.5 42.5 24.0 40.0 23.5 37.5 23.0 25 35 td(off) - - - - 95 35.0 105 115 125 TJ = 125ºC, VGS = 10V 25 45.0 42.5 TJ = 25ºC 40.0 t f - Nanoseconds 47.5 TJ = 125ºC 150 VDS = 27.5V 90 80 120 I D = 20A 70 I D = 40A 60 50 40 37.5 23 35.0 28 30 32 34 36 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 38 40 90 t d ( o f f ) - Nanoseconds 50.0 t d ( o f f ) - Nanoseconds t f - Nanoseconds 85 td(off) - - - - tf 100 VDS = 27.5V 26 75 180 110 52.5 RG = 5Ω, VGS = 10V 24 65 120 55.0 22 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 27 20 45 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 24 40 47.5 45.0 I D = 40A RG - Ohms 26 I D = 20A VDS = 27.5V 11 13 15 17 19 21 23 25 27 29 31 33 tf 38 td(off) - - - - tf 18.0 5 36 50.0 25.5 t d ( o n ) - Nanoseconds 33.0 50 34 t d ( o f f ) - Nanoseconds VDS = 27.5V 60 32 26.0 35.5 TJ = 125ºC, VGS = 10V 80 t r - Nanoseconds td(on) - - - - t f - Nanoseconds 90 30 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 100 tr 28 I D - Amperes 60 30 20 30 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 RG - Ohms IXYS REF: T_110N055T (3V) 7-11-06.xls Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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