IXTA120N075T2

IXTA120N075T2 IXTP120N075T2 TrenchT2TM Power MOSFET VDSS ID25 = 75V = 120A  7.7m  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 75 V VDGR TJ = 25C to 175C, RGS = 1M 75 V VGSM Transient 20 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 120 300 A A IA TC = 25C 60 A EAS TC = 25C 600 mJ PD TC = 25C 250 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Md Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 2.5 3.0 g g G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier 175°C Operating Temperature High Current Handling Capability ROHS Compliant High Performance Trench Technology for extremely low RDS(on)        Advantages High Power Density Easy to Mount Space Savings   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 75 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V Applications 4.0 V             200 nA 5 A TJ = 150C RDS(on)  VGS = 10V, ID = 60A, Notes 1 & 2 150 A 7.7 m Automotive Engine Control Synchronous Buck Converter (for Notebook SystemPower & General Purpose Point & Load)  DC/DC Converters  High Current Switching Applications  Power Train Management  Distributed Power Architecture   © 2018 IXYS CORPORATION, All Rights Reserved DS100051A(7/18) IXTA120N075T2 IXTP120N075T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 38 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 60A RG = 5 (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 60A Qgd E 62 S 4740 pF 585 pF 75 pF 13 ns 33 ns 21 ns 18 ns 78 nC 24 nC 23 nC C2 A E1 L1 D1 D 1 2 L2 3 A1 b b2 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 60.12 [3.0] 0.10 [2.5] 0.06 [1.6] 0.62 C/W RthJC RthCS TO-263 Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 120 A ISM Repetitive, Pulse Width Limited by TJM 480 A VSD trr IRM QRM IF = 60A, VGS = 0V, Note 1 1.3 IF = 60A, VGS = 0V, -di/dt = 100A/s, VR = 37V TO-220 Outline E A oP A1 V 50 ns 4 A 100 nC H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L ee Notes: 1. Pulse test, t  300s; duty cycle, d  2%. 3X b c e1 e1 3X b2 1 - Gate 2,4 - Drain 3 - Source 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA120N075T2 IXTP120N075T2 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 120 300 VGS = 15V 10V 9V 100 9V 250 8V 200 I D - Amperes 80 I D - Amperes 10V VGS = 15V 7V 60 40 8V 150 7V 100 6V 6V 50 20 5V 5V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 0 1.0 1 2 3 4 7 8 9 10 2.6 120 VGS = 15V 10V 9V 2.4 8V 7V 80 60 6V 40 VGS = 10V 2.2 RDS(on) - Normalized 100 I D - Amperes 6 Fig. 4. RDS(on) Normalized to ID = 60A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 2.0 I D = 120A 1.8 I D = 60A 1.6 1.4 1.2 1.0 0.8 20 0.6 5V 0 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 2.2 -25 0 VDS - Volts 50 75 100 125 150 175 150 175 Fig. 6. Drain Current vs. Case Temperature 140 VGS = 10V 15V 3.5 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Drain Current 4.0 120 3.0 100 o TJ = 175 C I D - Amperes RDS(on) - Normalized 5 VDS - Volts VDS - Volts 2.5 2.0 1.5 80 60 40 o TJ = 25 C 20 1.0 0 0.5 0 30 60 90 120 150 180 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 210 240 270 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 IXTA120N075T2 IXTP120N075T2 Fig. 7. Input Admittance Fig. 8. Transconductance 140 100 o 90 120 TJ = - 40 C 80 o 25 C 80 o 70 o TJ = 150 C g f s - Siemens I D - Amperes 100 o - 40 C 60 25 C 60 o 150 C 50 40 30 40 20 20 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 20 40 60 VGS - Volts 100 120 140 160 60 70 80 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 300 9 250 VDS = 38V I D = 60A 8 I G = 10mA 7 200 6 VGS - Volts I S - Amperes 80 I D - Amperes 150 o 5 4 TJ = 150 C 100 3 o TJ = 25 C 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 1.5 10 20 Fig. 11. Capacitance 40 50 Fig. 12. Forward-Bias Safe Operating Area 10,000 1000 RDS(on) Limit Ciss 1,000 100 I D - Amperes Capacitance - PicoFarads 30 QG - NanoCoulombs VSD - Volts Coss 100 25μs 100μs 10 1ms o Crss TJ = 175 C o TC = 25 C Single Pulse f = 1MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10ms DC 1 1 10 VDS - Volts 100ms 100 IXTA120N075T2 IXTP120N075T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 45 45 RG = 5Ω, VGS = 10V 40 VDS = 38V 40 35 o TJ = 25 C 35 t r - Nanoseconds t r - Nanoseconds 50 30 I D = 120A 25 20 I D = 60A 15 30 25 RG = 5Ω, VGS = 10V VDS = 38V 20 15 10 10 o TJ = 125 C 5 5 0 0 25 35 45 55 65 75 85 95 105 115 60 125 65 70 75 80 85 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 200 td(on) 10 I D = 120A, 60A 0 12 14 16 18 td(off) VDS = 38V 22 25 20 20 I D = 120A 18 14 25 20 35 45 55 tf 95 105 115 5 125 22 o TJ = 25 C 16 14 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 110 t f - Nanoseconds 18 td(off) 120 o TJ = 125 C, VGS = 10V VDS = 38V 100 I D = 60A,120A 80 80 60 60 40 40 18 20 20 14 120 0 0 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 26 t d(off) - Nanoseconds 20 100 tf 100 30 o TJ = 125 C 90 140 120 34 VDS = 38V t f - Nanoseconds 85 140 td(off) RG = 5Ω, VGS = 10V 80 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 38 70 65 TJ - Degrees Centigrade 26 60 15 10 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 22 30 I D = 60A RG - Ohms 24 120 35 16 0 10 115 RG = 5Ω, VGS = 10V 24 t f - Nanoseconds t r - Nanoseconds 20 8 110 t d(off) - Nanoseconds 80 t d(on) - Nanoseconds 30 6 tf 40 120 4 105 40 26 VDS = 38V 40 100 28 o TJ = 125 C, VGS = 10V 160 95 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 50 tr 90 I D - Amperes IXTA120N075T2 IXTP120N075T2 Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_120N075T2 (V4) 7-10-18-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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