IXTA130N15X4-7

Advance Technical Information IXTA130N15X4 IXTA130N15X4-7 X4-Class Power MOSFETTM N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) = 150V = 130A   8.0m TO-263 AA G S D (Tab) Maximum Ratings G = Gate S = Source D = Drain Tab = Drain Symbol Test Conditions VDSS TJ = 25C to 150C 150 V VDGR TJ = 25C to 150C, RGS = 1M 150 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 130 A IDM TC = 25C, Pulse Width Limited by TJM 240 A IA TC = 25C 65 A D (Tab) EAS TC = 25C 800 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns Pins: 1 - Gate 2, 3, 5 , 6 , 7 - Source 4 (Tab) - Drain PD TC = 25C 400 W TO-263 (7-Leads) 1 7 -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C  10.65 / 2.2..14.6 N/lb  2.5 3.0 g g TJ TL TSOLD FC Weight Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Force TO-263 TO-263 (7Leads) Features   International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 150 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) 4.5 V 5 A 200 A TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved.  High Power Density Easy to Mount Space Savings V 100 nA VGS = 10V, ID = 0.5 • ID25, Notes 1&2  7.0 8.0 m Applications      Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100894A(4/18) IXTA130N15X4 IXTA130N15X4-7 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 70 RGi Gate Input Resistance Ciss Coss 120 S 3.4  4770 pF 710 pF 3.5 pF 560 1850 pF pF 20 ns VGS = 0V, VDS = 25V, f = 1MHz Crss Co(er) Co(tr) Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 27 ns 100 ns 10 ns 87 nC 24 nC 23 nC 0.31 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 130 A ISM Repetitive, pulse Width Limited by TJM 520 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 65A, -di/dt = 100A/μs 93 310 6.7 VR = 75V ns nC A Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA130N15X4 IXTA130N15X4-7 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 400 VGS = 10V 9V 8V 120 8V 100 7V 300 80 I D - Amperes I D - Amperes VGS = 10V 9V 350 6V 60 250 7V 200 150 6V 40 100 5V 20 50 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 0 5 10 VDS - Volts 2.6 VGS = 10V 8V 7V 25 VGS = 10V 2.2 RDS(on) - Normalized 100 I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 65A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 120 15 VDS - Volts 6V 80 60 5V 40 I D = 130A 1.8 I D = 65A 1.4 1.0 20 4V 0 0 4.0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.6 2 -50 2.2 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 65A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 BVDSS / VGS(th) - Normalized 3.5 RDS(on) - Normalized 0.2 3.0 o TJ = 125 C 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 50 100 150 200 250 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 300 350 400 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTA130N15X4 IXTA130N15X4-7 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 140 160 120 140 120 I D - Amperes 100 I D - Amperes VDS = 10V 80 60 40 100 o TJ = 125 C 80 o 25 C o - 40 C 60 40 20 20 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 240 400 o TJ = - 40 C VDS = 10V 200 350 160 o 25 C I S - Amperes g f s - Siemens 300 120 o 125 C 80 250 200 150 o TJ = 125 C 100 o TJ = 25 C 40 50 0 0 0 20 40 60 80 100 120 140 160 180 0.4 0.5 0.6 0.7 0.8 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 9 VDS = 75V 8 I D = 65A Capacitance - PicoFarads 10 I G = 10mA 7 VGS - Volts 0.9 VSD - Volts I D - Amperes 6 5 4 3 2 10,000 C iss 1,000 C oss 100 C rss 10 1 f = 1 MHz 0 1 0 10 20 30 40 50 60 70 80 90 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXTA130N15X4 IXTA130N15X4-7 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 7 RDS(on) Limit 25μs 100 5 I D - Amperes EOSS - MicroJoules 6 4 3 2 100μs 10 1ms o 1 TJ = 150 C 10ms o TC = 25 C Single Pulse 1 0 DC 0.1 0 20 40 60 80 100 120 140 160 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_130N15X4 (16-S201) 4-19-18 IXTA130N15X4 IXTA130N15X4-7 TO-263 (7-lead) (IXTA..7) Outline TO-263 (IXTA) Outline E L2 D 1 2 3 A c2 D1 D1 D L b 8 E1 1 2 3 4 5 6 7 L3 c L3 1 = Gate 2,4 = Drain 3 = Source OPTIONAL c2 L2 4 L b2 e A E E1 A1 e L4 L1 c b 0- 8 L1 A1 Pins: IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 - Gate 2,3,5,6,7 - Source 4, 8 - Drain 0- 3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.