IXTA140N12T2

Advance Technical Information IXTA140N12T2 IXTP140N12T2 TrenchT2TM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 120V = 140A   10m TO-263AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 120 V VDGR TJ = 25C to 175C, RGS = 1M 120 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 140 A IDM TC = 25C, Pulse Width Limited by TJM 350 A IA TC = 25C 70 A EAS TC = 25C 1.3 J PD TC = 25C 577 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-263 TO-220 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 120 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) 500 A 8 D (Tab) D = Drain Tab = Drain Features         International Standard Packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Fast Intrinsic Rectifier High Current Handling Capability 10 m Easy to Mount Space Savings High Power Density Applications     © 2017 IXYS CORPORATION, All Rights Reserved DS G = Gate S = Source V 10 A VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 G              200 nA TJ = 150C TO-220AB (IXTP) Advantages V 4.5 D (Tab) Synchronous Rectification DC/DC Converters and Off-Line UPS Primary- Side Switch High Current Switching Applications DS100829A(5/17) IXTA140N12T2 IXTP140N12T2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 66 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 110 S 9700 pF 850 pF 58 pF 27 ns 30 ns 39 ns 17 ns 174 nC 52 nC 40 nC Crss td(on) tr td(off) Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd Pins: 1 - Gate 2,4 - Drain 3 - Source 0.26 C/W RthJC RthCH TO-263 Outline TO-220 0.50  C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 140 A ISM Repetitive, Pulse Width Limited by TJM 560 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr IF = 0.5 • ID25, VGS = 0V IRM QRM -di/dt = 100A/s VR = 60V 65 ns 13 A 430 nC TO-220 Outline Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA140N12T2 IXTP140N12T2 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 600 140 VGS = 10V 8V 120 VGS = 15V 10V 9V 500 7V 8V 100 I D - Amperes I D - Amperes 400 80 6V 60 300 7V 200 40 6V 20 100 5V 5V 0 0 0 0.5 1 0 1.5 10 15 20 25 30 VDS - Volts Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Normalized RDS(on) to ID = 70A Value vs. Junction Temperature 3.2 140 VGS = 10V 7V 120 VGS = 10V 2.8 RDS(on) - Normalized 6V 100 I D - Amperes 5 VDS - Volts 80 60 5V 40 20 2.4 ID = 140A 2.0 ID = 70A 1.6 1.2 0.8 4V 0 0.4 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 VDS - Volts 50 75 100 125 150 175 150 175 TJ - Degrees Centigrade Fig. 5. Normalized RDS(on) to ID = 70A vs. Drain Current 6 25 Fig. 6. Drain Current vs. Case Temperature 160 VGS = 10V 140 5 I D - Amperes RDS(on) - Normalized 120 o TJ = 175 C 4 3 2 100 80 60 o TJ = 25 C 40 1 20 0 0 0 100 200 300 400 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 500 600 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 IXTA140N12T2 IXTP140N12T2 Fig. 8. Transconductance Fig. 7. Input Admittance 240 240 VDS = 10V 200 160 160 g f s - Siemens I D - Amperes VDS = 10V 200 120 o TJ = 150 C 80 o TJ = - 40 C o 25 C o 120 150 C 80 o 25 C o - 40 C 40 40 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 Fig. 10. Gate Charge 800 10 VDS = 60V 700 I D = 70A 8 600 500 V GS - Volts I S - Amperes 100 I D - Amperes 400 300 I G = 10mA 6 4 o TJ = 150 C 200 2 o TJ = 25 C 100 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 20 40 60 100 120 140 160 180 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 f = 1 MHz Capacitance - PicoFarads 80 QG - NanoCoulombs VSD - Volts RDS(on) Limit Ciss 100μs 100 I D - Amperes 10,000 Coss 1,000 Crss 100 10 1ms 1 10ms o TJ = 175 C DC o TC = 25 C Single Pulse 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXTA140N12T2 IXTP140N12T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 40 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 40 RG = 2Ω , VGS = 10V RG = 2Ω , VGS = 10V VDS = 60V 36 36 VDS = 60V o t r - Nanoseconds TJ = 25 C 32 t r - Nanoseconds 32 28 I D = 280A 24 28 24 I D = 140A o TJ = 150 C 20 20 16 16 25 50 75 100 125 150 60 100 140 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 120 tr 100 70 40 60 35 tf t f - Nanoseconds t r - Nanoseconds td(off) 55 30 25 60 40 40 30 20 20 15 10 10 0 4 5 6 7 8 9 50 I D = 280A 45 I D = 140A 20 35 25 10 50 75 100 30 150 125 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf 22 60 140 td(off) 45 o TJ = 25 C 16 12 80 100 120 140 160 180 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 200 220 td(on) 140 o TJ = 150 C, VGS = 10V I D = 280A VDS = 60V 100 120 80 100 I D = 140A 60 80 40 60 35 20 40 30 240 0 40 14 t f - Nanoseconds t f - Nanoseconds o TJ = 150 C 18 t d(off) - Nanoseconds 50 160 20 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = 60V 20 tr 120 55 RG = 2Ω, VGS = 10V 40 t d(off) - Nanoseconds t d(on) - Nanoseconds 50 I D = 140A, 280A 60 60 VDS = 60V 80 24 260 RG = 2Ω, VGS = 10V VDS = 60V 3 220 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature td(on) o TJ = 150 C, VGS = 10V 2 180 I D - Amperes IXTA140N12T2 IXTP140N12T2 Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXT_140N12T2 (V6-N12)5-02-17 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.