IXTA140P05T

IXTA140P05T IXTP140P05T IXTH140P05T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ RDS(on) P-Channel Enhancement Mode Avalanche Rated - 50V - 140A Ω 9mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 50 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 50 V VGSS Continuous ±15 V VGSM Transient ±25 V ID25 TC = 25°C (Chip Capability) -140 A ILRMS IDM Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM -120 - 420 A A IA EAS TC = 25°C TC = 25°C - 70 1 A J PD TC = 25°C 298 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G DS D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG z Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250μA - 50 VGS(th) VDS = VGS, ID = - 250μA - 2.0 IGSS VGS = ± 15V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS = 0V -10 μA - 750 μA RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 TJ = 125°C z z V - 4.0 V 9 mΩ z Applications z z z z z z © 2013 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS100027C(01/13) IXTA140P05T IXTP140P05T IXTH140P05T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = 0.5 • ID25, Note 1 44 Ciss VGS = 0V, VDS = - 25V, f = 1MHz Coss Crss td(on) Resistive Switching Times tr VGS = -10V, VDS = - 30V, ID = - 50A td(off) RG = 1Ω (External) tf Qg(on) VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs Qgd 72 S 13.5 nF 1640 pF 640 pF 28 ns 34 ns 38 ns 25 ns 200 nC 50 nC 65 nC TO-220 TO-247 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) °C/W °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V -140 A ISM Repetitive, Pulse Width Limited by TJM - 560 A VSD IF = - 70A, VGS = 0V, Note 1 -1.3 V trr QRM IRM IF = - 70A, -di/dt = -100A/μs VR = - 25V, VGS = 0V Note 1 = Gate 2 = Drain 3 = Source 0.42 °C/W RthJC RthCS TO-247 Outline 53 58 - 2.2 ns nC A TO-220 Outline 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 Outline Pins: 1 - Gate 3 - Source 2 - Drain Pins: 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA140P05T IXTP140P05T IXTH140P05T Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC -140 -350 VGS = -10V - 9V - 8V -120 - 9V -300 - 8V -250 ID - Amperes -100 ID - Amperes VGS = -10V - 7V -80 -60 - 6V -40 - 7V -200 -150 - 6V -100 -20 - 5V -50 - 5V 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 0 -4 -6 -8 -10 -12 -14 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = - 70A Value vs. Junction Temperature -16 1.6 -140 VGS = -10V - 9V - 8V -120 VGS = -10V I D = - 140A 1.4 R DS(on) - Normalized -100 ID - Amperes -2 VDS - Volts - 7V -80 - 6V -60 -40 I D = - 70A 1.2 1.0 0.8 - 5V -20 0 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = - 70A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 1.8 -140 VGS = -10V 1.7 -120 External Lead Current Limit TJ = 125ºC 1.6 -100 1.5 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 1.4 1.3 -80 -60 1.2 -40 TJ = 25ºC 1.1 -20 1.0 0.9 0 0 -50 -100 -150 -200 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -250 -300 -350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA140P05T IXTP140P05T IXTH140P05T Fig. 7. Input Admittance Fig. 8. Transconductance -180 TJ = - 40ºC 100 -160 -140 80 TJ = 125ºC 25ºC - 40ºC -100 g f s - Siemens ID - Amperes -120 -80 -60 -40 25ºC 125ºC 60 40 20 -20 0 -2.5 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 0 -20 -40 -60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -100 -120 -140 -160 -180 Fig. 10. Gate Charge -300 -10 VDS = - 25V -9 -250 I D = - 70A -8 I G = -1mA -7 VGS - Volts -200 IS - Amperes -80 ID - Amperes -150 -100 TJ = 125ºC -6 -5 -4 -3 TJ = 25ºC -2 -50 -1 0 -0.4 0 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 0 -1.5 20 40 Fig. 11. Capacitance 80 100 120 140 160 180 200 Fig. 12. Forward-Bias Safe Operating Area - 1,000 100,000 f = 1 MHz RDS(on) Limit 25µs Ciss 100µs - 100 10,000 ID - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs VSD - Volts Coss 1,000 External Lead Current Limit - 10 Crss 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1ms -1 -1 10ms TJ = 150ºC 100ms TC = 25ºC Single Pulse DC - 10 VDS - Volts - 100 IXTA140P05T IXTP140P05T IXTH140P05T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 38 38 RG = 1Ω, VGS = -10V 36 36 TJ = 25ºC VDS = - 30V 34 t r - Nanoseconds t r - Nanoseconds 34 32 30 I 28 I 26 D D = - 50A = - 25A 32 RG = 1Ω, VGS = -10V 30 VDS = - 30V 28 26 TJ = 125ºC 24 24 22 22 25 35 45 55 65 75 85 95 105 115 125 -24 -26 -28 -30 -32 -34 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 80 td(on) - - - 70 TJ = 125ºC, VGS = -10V t r - Nanoseconds I D = - 50A, - 25A 120 50 80 40 40 0 0 2 4 6 8 10 12 14 16 18 28 tf td(off) - - - - 27 VDS = - 30V 60 26 55 25 30 23 40 20 22 25 70 280 65 240 35 45 55 50 TJ = 25ºC, 125ºC 45 t f - Nanoseconds 26 95 105 115 35 125 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -46 -48 -50 180 I D = - 25A, - 50A 60 0 -44 220 100 30 22 VDS = - 30V 80 40 -42 260 140 35 -40 td(off) - - - - 120 23 -38 tf 160 40 -36 85 300 200 24 -34 75 20 0 2 4 6 8 10 RG - Ohms 12 14 16 18 20 t d(off) - Nanoseconds 60 55 -32 65 TJ = 125ºC, VGS = -10V 27 -30 50 I D = - 25A, - 50A 45 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - VDS = - 30V -28 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 1Ω, VGS = -10V -26 -50 TJ - Degrees Centigrade tf -24 -48 24 20 30 25 -46 RG = 1Ω, VGS = -10V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 28 -44 70 RG - Ohms 29 -42 t d(off) - Nanoseconds 60 t d(on) - Nanoseconds VDS = - 30V 160 -40 29 t f - Nanoseconds tr -38 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 240 200 -36 ID - Amperes IXTA140P05T IXTP140P05T IXTH140P05T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_140P05T(A6)11-08-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.