IXTA150N15X4

Advance Technical Information IXTA150N15X4 IXTA150N15X4-7 X4-Class Power MOSFETTM VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 150V = 150A  6.9m  TO-263 G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 150 V VDGR TJ = 25C to 175C, RGS = 1M 150 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IL(RMS) TC = 25C External Lead Current Limit 150 120 A A IDM TC = 25C, Pulse Width Limited by TJM 260 A IA TC = 25C 75 A D (Tab) EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 480 W Pins: 1 - Gate 2, 3, 5 , 6 , 7 - Source 4 (Tab) - Drain -55 ... +175 C TJ TJM 175 C Tstg -55 ... +175 C 300 260 °C °C 10..65 / 2.2..14.6 N/lb 2.5 3.0 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting Force Weight TO-263 TO-263 (7Leads) G = Gate S = Source D = Drain Tab = Drain TO-263 (7-Leads) 1 7 Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 150 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V   V 4.5 V Applications  RDS(on) 100 nA TJ = 150C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2018 IXYS CORPORATION, All Rights Reserved. 10 500 A A 6.9 m High Power Density Easy to Mount Space Savings     Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100909A(6/18) IXTA150N15X4 IXTA150N15X4-7 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 70 Ciss Coss td(on) Resistive Switching Times tr td(off) tf  pF pF 4 pF 660 2100 pF pF 23 ns 5 ns 60 ns 6 ns 105 nC 30 nC 28 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs 1.3 900 Crss Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related S 5500 VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) 120 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.31 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 150 A ISM Repetitive, pulse Width Limited by TJM 600 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 75A, -di/dt = 100A/μs 100 350 7 VR = 75V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA150N15X4 IXTA150N15X4-7 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 500 VGS = 10V 8V 140 7V 120 9V 400 8V 350 I D - Amperes 100 I D - Amperes VGS = 10V 450 80 6V 60 300 250 7V 200 150 40 6V 100 20 5V 50 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 75A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 3.0 VGS = 10V 8V 140 15 VDS - Volts VGS = 10V 2.6 7V I D - Amperes 100 RDS(on) - Normalized 120 6V 80 60 40 5V 2.2 I D = 150A 1.8 I D = 75A 1.4 1.0 0.6 20 4V 0.2 0 0 4.5 0.5 1 2 2.5 -50 3 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 75A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 175 1.2 3.5 BVDSS / VGS(th) - Normalized 4.0 RDS(on) - Normalized 1.5 o TJ = 150 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 0.7 VGS(th) 0.6 1.0 0.5 0.5 0 50 100 150 200 250 300 350 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 400 450 500 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTA150N15X4 IXTA150N15X4-7 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 160 140 External Lead Current Limit 120 I D - Amperes 100 I D - Amperes VDS = 10V 140 120 80 60 100 80 60 o TJ = 150 C 40 o 40 25 C o 20 - 40 C 20 0 0 -50 -25 0 25 50 75 100 125 150 3.0 175 3.5 4.0 4.5 TC - Degrees Centigrade 6.0 6.5 500 200 o VDS = 10V 450 TJ = - 40 C 180 400 160 350 140 o I S - Amperes g f s - Siemens 5.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 220 25 C 120 100 o 150 C 80 300 250 200 150 60 o TJ = 150 C 40 100 20 50 0 o TJ = 25 C 0 0 20 40 60 80 100 120 140 160 180 0.2 0.4 0.6 0.8 I D - Amperes 1.0 1.2 1.4 1.6 1.8 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 75V Capacitance - PicoFarads I D = 75A 8 I G = 10mA 7 VGS - Volts 5.0 VGS - Volts 6 5 4 3 2 10,000 Ciss 1,000 Coss 100 C rss 10 f = 1 MHz 1 0 1 0 10 20 30 40 50 60 70 80 90 100 110 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXTA150N15X4 IXTA150N15X4-7 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 8 RDS(on) Limit 7 25μs 100 100μs External Lead Limit 5 I D - Amperes E OSS - MicroJoules 6 4 3 10 1ms 1 2 10ms o TJ = 175 C DC o TC = 25 C Single Pulse 1 0 0.1 0 20 40 60 80 100 VDS - Volts 1 120 1 140 10 Fig. 15. Maximum Transient Thermal Impedance 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.5 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_150N15X4 (17) 6-20-18 IXTA150N15X4 IXTA150N15X4-7 TO-263 (IXTA) Outline E A L2 E1 c2 D1 D 4 L 1 2 3 b2 L3 b e 1 = Gate 2,4 = Drain 3 = Source c A1 L4 0- 8 L1 TO-263 (7-lead) (IXTA..7) Outline A E OPTIONAL c2 L2 D1 D L 8 E1 1 2 3 4 5 6 7 L3 e L1 c b A1 0- 3 Pins: 1 - Gate 2,3,5,6,7 - Source 4,8 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.