IXTA180N10T

IXTA180N10T IXTP180N10T TrenchTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 100V = 180A   6.4m TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C, RGS = 1M 100 V VGSS VGSM Continuous Transient  20  30 V V ID25 IL(RMS) IDM TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 180 120 450 A A A IA TC = 25C 25 A EAS TC = 25C 750 mJ PD TC = 25C 480 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-263 TO-220 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 g g TO-220 (IXTP) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      Ultra-Low On Resistance Avalanche Rated Low Package Inductance - Easy to Drive and to Protect 175C Operating Temperature Fast Intrinsic Diode Advantages    Easy to Mount Space Savings High Power Density Applications Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 100 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V 4.5 V             100 nA 5 A 100  A TJ = 150C RDS(on)  VGS = 10V, ID = 25A, Notes 1& 2 5.7 6.4 m       © 2018 IXYS CORPORATION, All rights reserved Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier DS99651B(11/18) IXTA180N10T IXTP180N10T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 70 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 25A RG = 3.3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A Qgd E 110 S 6900 pF 923 pF 162 pF 33 ns 54 ns 42 ns 31 ns 151 nC 39 nC 45 nC C2 A E1 L1 D1 D 1 2 L2 3 b b2 A1 4 H L3 c e 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] 0.31C/W RthJC RthCH TO-263 Outline TO-220 0.50  C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 180 A ISM Repetitive, Pulse Width Limited by TJM 450 A VSD IF = 25A, VGS = 0V, Note 1 0.95 V trr IRM QRM 72 5.1 0.18 IF = 90A, VGS = 0V -di/dt = 100A/s, VR = 50V TO-220 Outline E ns A μC A oP A1 H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L Notes: 1. Pulse test, t  300s; duty cycle, d  2%. e 3X b c e1 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA180N10T IXTP180N10T Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 180 300 VGS = 10V 9V 8V 160 VGS = 10V 9V 250 8V 7V 120 I D - Amperes I D - Amperes 140 100 80 60 200 7V 150 100 6V 40 6V 50 20 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 7 VGS = 10V 2.6 140 7V RDS(on) - Normalized I D - Amperes 6 3.0 VGS = 10V 9V 8V 160 5 Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150oC 180 4 VDS - Volts VDS - Volts 120 100 80 6V 60 2.2 I D = 180A 1.8 I D = 90A 1.4 1.0 40 0.6 20 5V 0 0.2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 90A Value vs. Drain Current 3.2 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 6. Drain Current vs. Case Temperature 140 o TJ = 175 C 2.8 120 100 I D - Amperes RDS(on) - Normalized External Lead Current Limit 2.4 2.0 VGS = 10V 15V 1.6 80 60 o TJ = 25 C 1.2 40 20 0.8 0 0.4 0 50 100 150 200 I D - Amperes © 2018 IXYS CORPORATION, All rights reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA180N10T IXTP180N10T Fig. 8. Transconductance 150 200 135 175 120 o TJ = - 40 C o 150 g f s - Siemens I D - Amperes Fig. 7. Input Admittance 225 125 100 o TJ = 150 C 75 o 25 C o - 40 C 50 25 C 105 90 75 o 150 C 60 45 30 25 15 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 50 100 VGS - Volts 150 200 250 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 250 VDS = 50V 9 I D = 25A 8 I G = 10mA 7 VGS - Volts I S - Amperes 200 150 100 6 5 4 3 o TJ = 150 C 50 2 o TJ = 25 C 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 VSD - Volts Fig. 11. Capacitance 80 100 120 140 160 Fig. 12. Forward-Bias Safe Operating Area 1000 10,000 RDS(on) Limit Ciss f = 1 MHz 10ms 100μs 1ms 25μs - Amperes 100 1,000 10 DC, 100ms D Coss External Lead Current Limit I Capacitance - PicoFarads 60 QG - NanoCoulombs 1 o TJ = 175 C o TC = 25 C Single Pulse Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 VDS - Volts 100 IXTA180N10T IXTP180N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 80 70 RG = 3.3Ω VGS = 10V o TJ = 25 C 70 VDS = 50V t r - Nanoseconds t r - Nanoseconds 60 50 40 I D = 50A 30 60 50 RG = 3.3Ω VGS = 10V 40 VDS = 50V 30 o I D = 25A TJ = 125 C 20 20 10 10 25 35 45 55 65 75 85 95 105 115 125 24 28 32 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance td(on) 70 o 60 100 55 80 50 I D = 25A 34 52 33 49 32 46 40 40 20 35 31 30 30 8 10 12 14 16 18 35 45 55 RG - Ohms 37 61 115 40 125 RG = 3.3Ω, VGS = 10V 52 VDS = 50V 33 49 32 46 30 40 I D - Amperes © 2018 IXYS CORPORATION, All rights reserved 45 50 120 190 100 160 25A < I D < 50A 80 130 I D = 25A, 50A 60 100 43 40 70 40 20 o TJ = 25 C 31 220 TJ = 125 C, VGS = 10V VDS = 50V t f - Nanoseconds 55 td(off) 40 2 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds t f - Nanoseconds 58 td(off) 35 105 o 140 t d(off) - Nanoseconds 36 30 95 250 tf o TJ = 125 C 25 85 160 64 34 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 38 tf 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 35 43 I D = 25A, 50A 25 20 58 55 45 6 61 25A < I D < 50A VDS = 50V 35 60 0 td(off) RG = 3.3Ω, VGS = 10V 36 t f - Nanoseconds 120 4 52 t d(off) - Nanoseconds I D = 50A t d(on) - Nanoseconds t r - Nanoseconds 65 VDS = 50V 48 64 tf 37 TJ = 125 C, VGS = 10V 140 44 38 75 160 40 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 180 tr 36 I D - Amperes IXTA180N10T IXTP180N10T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_180N10T (61)3-07-08-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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