IXTA1N80

High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS(on) = 800 V = 750 mA = 11 Ω Preliminary Data Maximum Ratings VDSS TJ = 25°C to 150°C 800 VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 VGS Continuous ±20 VGSM Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C EAS TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 47 Ω PD TC = 25°C Tstg Md Weight BS TJM V O V 750 mA 3 A 1.0 A 5 mJ 100 mJ W -55 ... +150 °C 150 °C -55 ... +150 °C 1.13/10 Nm/lb.in. TO-220 TO-252 TO-263 Test Conditions ±30 40 Mounting torque 4 0.8 3 g g g 300 °C D (TAB) GD S TO-263 AA (IXTA) G S D (TAB) TO-252 AA (IXTY) G S G = Gate, S = Source, D (TAB) D = Drain, TAB = Drain Features ! International standard packages ! High voltage, Low RDS (on) HDMOSTM process Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 800 VGS(th) VDS = VGS, ID = 25 µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 500 mA Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved V V/ns Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol V 3 O EAR TJ TO-220AB (IXTP) E Test Conditions LE T Symbol V TJ = 25°C TJ = 125°C 9.5 4.5 V ±100 nA 25 500 µA µA 11 Ω ! Rugged polysilicon gate ! Fast switching times cell structure Applications ! Switch-mode and resonant-mode power supplies Flyback inverters ! ! DC choppers ! High frequency matching Advantages ! Space savings ! High power density DS98822C(11/03) IXTP 1N80 IXTA 1N80 IXTY 1N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 500 mA, pulse test 0.7 Ciss Coss 0.8 S 220 pF 23 pF Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 4 pF td(on) 11 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A 19 ns td(off) RG = 47Ω, (External) ns 28 ns QG(on) 8.5 nC 2.5 nC 4.5 nC VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A QGS RthJC 3.1 RthCK (IXTP) 0.50 Source-Drain Diode Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side LE T QGD E 40 tf TO-220 AD Dimensions K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V O Symbol 750 mA 3 A 2 V BS 1.8 710 TO-263 AA Outline ns TO-252 AA Outline O Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 Millimeter Min. Max. Inches Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1