IXTA220N04T2-7

TrenchT2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V VGSM Transient ± 20 V ID25 TC = 25°C 220 A ILRMS Lead Current Limit, RMS 160 A IDM TC = 25°C, pulse width limited by TJM 660 A IAR TC = 25°C 110 A EAS TC = 25°C 600 mJ PD TC = 25°C 360 W 1 7 (TAB) Pins: 1 - Gate 2, 3 - Source 5,6,7 - Source TAB (8) - Drain Features -55 ... +175 °C z TJM 175 °C z Tstg -55 ... +175 °C z 300 260 °C °C 3 g TJ TL TSOLD 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Weight z z Advantages z z z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 40 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V 4.0 V ±200 nA 5 μA 50 μA TJ = 150°C VGS = 10V, ID = 50A, Notes 1, 2 © 2008 IXYS CORPORATION, All rights reserved 2.8 International standard package 175°C Operating Temperature High current handling capability Avalanche Rated Low RDS(on) Easy to mount Space savings High power density Applications • Synchronous Buck Converters • High Current Switching Power Supplies • Battery Powered Electric Motors • Resonant-mode power supplies • Electronics Ballast Application • Class D Audio Amplifiers 3.5 mΩ DS99962A(11/08) IXTA220N04T2-7 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 20V, ID = 50A RG = 3.3Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-263 (7-lead) (IXTA..7) Outline 66 S 6820 pF 1185 pF 250 pF 15 ns 21 ns 31 ns 21 ns 112 nC 33 nC 30 nC 0.42 °C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 220 A ISM Repetitive, Pulse width limited by TJM 660 A VSD IF = 50A, VGS = 0V, Note 1 1.0 V trr IF = 110A, VGS = 0V IRM QRM Pins: 1 - Gate 2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain -di/dt = 100A/μs VR = 20V 45 ns 1.4 A 32 nC Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA220N04T2-7 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 220 VGS = 15V 10V 9V 8V 200 180 300 160 8V 250 140 120 ID - Amperes ID - Amperes VGS = 15V 10V 9V 7V 100 80 6V 7V 200 150 6V 100 60 40 50 5V 20 5V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.0 0.5 1.0 1.5 220 3.5 VGS = 10V 1.8 RDS(on) - Normalized 160 ID - Amperes 3.0 2.0 VGS = 15V 10V 9V 8V 180 2.5 Fig. 4. RDS(on) Normalized to ID = 110A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 200 2.0 VDS - Volts VDS - Volts 7V 140 120 100 6V 80 60 40 5V 1.6 I D = 220A I D = 110A 1.4 1.2 1.0 0.8 20 0.6 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -50 1.4 -25 0 Fig. 5. RDS(on) Normalized to ID = 110A Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 2.2 180 External Lead Current Limit VGS = 10V 15V - - - - 2.0 160 140 TJ = 175ºC 1.8 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 1.6 1.4 120 100 80 60 1.2 TJ = 25ºC 40 1.0 20 0.8 0 0 40 80 120 160 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 240 280 320 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA220N04T2-7 Fig. 7. Input Admittance Fig. 8. Transconductance 120 160 TJ = - 40ºC 140 100 g f s - Siemens ID - Amperes 120 100 80 TJ =150ºC 25ºC - 40ºC 60 40 25ºC 80 150ºC 60 40 20 20 0 0 2.5 3 3.5 4 4.5 5 5.5 6 6.5 0 20 40 60 VGS - Volts 300 10 270 9 240 8 210 7 180 6 150 120 120 140 160 VDS = 20V I D = 110A I G = 10mA 5 4 3 TJ = 150ºC 60 2 TJ = 25ºC 30 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 VSD - Volts 40 60 80 100 120 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000 f = 1 MHz RDS(on) Limit 25µs Ciss 10,000 I D - Amperes Capacitance - PicoFarads 100 Fig. 10. Gate Charge VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 90 80 ID - Amperes Coss 1,000 100µs 100 External Lead Limit 1ms 10 DC TJ = 175ºC Crss 10ms 100ms TC = 25ºC Single Pulse 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_220N04T2(V5) 4-24-08-C IXTA220N04T2-7 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 28 27 RG = 3.3Ω 26 VGS = 10V 25 VDS = 20V 27 RG = 3.3Ω VGS = 10V 26 t r - Nanoseconds t r - Nanoseconds 28 24 23 22 I 21 D = 110A 20 I 19 D = 220A VDS = 20V 25 TJ = 125ºC 24 23 22 TJ = 25ºC 21 20 18 19 17 18 16 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 120 140 160 180 200 ID - Amperes Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 36 65 34 tf 60 32 RG = 3.3Ω, VGS = 10V 38 55 30 VDS = 20V 36 tr 110 TJ = 125ºC, VGS = 10V 100 VDS = 20V 90 50 80 45 70 40 60 35 I D = 220A, 110A 50 30 40 25 30 20 20 0 2 4 6 8 10 12 14 16 18 28 34 26 24 30 22 28 I D = 110A 20 24 22 10 14 20 5 12 25 20 35 45 55 65 75 85 95 105 115 18 125 TJ - Degrees Centigrade Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 200 50 tf td(off) - - - - RG = 3.3Ω, VGS = 10V 42 TJ = 125ºC 38 26 34 22 30 18 26 td(off) - - - - 180 TJ = 125ºC, VGS = 10V 160 160 VDS = 20V 140 140 120 120 100 100 80 80 I D = 110A 60 60 40 TJ = 25ºC 14 40 60 80 100 120 140 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 160 180 22 200 40 I 20 D = 220A 20 0 0 2 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 30 46 t d(off) - Nanoseconds VDS = 20V 200 tf 180 t f - Nanoseconds 42 t f - Nanoseconds 26 16 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 34 32 I D = 220A RG - Ohms 38 40 td(off) - - - - 18 15 10 42 t d(off) - Nanoseconds t r - Nanoseconds td(on) - - - - t f - Nanoseconds 70 120 t d(on) - Nanoseconds 130 IXTA220N04T2-7 Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_220N04T2(V5) 4-24-08-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.