IXTA230N04T4

Advance Technical Information IXTA230N04T4 IXTP230N04T4 TrenchT4TM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 40V = 230A  2.9m  TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 40 V VDGR TJ = 25C to 175C, RGS = 1M 40 V VGSM Transient 15 V ID25 ILRMS TC = 25C Lead Current Limit, RMS 230 160 A A IDM TC = 25C, Pulse Width Limited by TJM 700 A IA EAS TC = 25C TC = 25C 100 600 A mJ PD TC = 25C 340 W -55 ... +175 175 -55 ... +175 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight TO-263 TO-220 (TO-220) D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages 175°C Operating Temperature High Current Handling Capability Avalanche Rated Low RDS(on) Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 40 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V Applications V • Synchronous Buck Converters • High Current Switching Power             200 nA 5 TJ = 150C RDS(on) 4.0 VGS = 10V, ID = 0.5 • ID25, Notes 1,2 © 2016 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density A 250 A 2.9 m Supplies • Battery Powered Electric Motors • Resonant-Mode Power Supplies • Electronics Ballast Application • Class D Audio Amplifiers DS100729(5/16) IXTA230N04T4 IXTP230N04T4 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max. 100 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 170 S 1.2  7400 pF 1115 pF 760 pF 40 ns 143 ns Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS TO-263 (IXTA) Outline TO-220 85 ns 82 ns 140 nC 35 nC 53 nC 0.50 0.44 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 230 A ISM Repetitive, Pulse width limited by TJM 920 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr IF = 115A, VGS = 0V IRM QRM -di/dt = 100A/s VR = 30V 32 ns 1.6 A 25.6 nC Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 TO-220 (IXTP) Outline Pins: 1 - Gate 3 - Source 2 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA230N04T4 IXTP230N04T4 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 240 400 VGS = 15V 10V 9V 200 9V 300 8V I D - Amperes 160 I D - Amperes VGS = 10V 350 120 7V 8V 250 200 150 7V 80 100 40 50 6V 6V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 2 3 4 5 6 7 8 9 VDS - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Normalized RDS(on) to ID = 115A Value vs. Junction Temperature 240 2.0 VGS = 15V 10V 9V 10 VGS = 10V 8V 1.8 R DS(on) - Normalized 200 160 I D - Amperes 1 VDS - Volts 7V 120 80 6V 40 1.6 ID = 230A 1.4 ID = 115A 1.2 1.0 0.8 5V 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 -25 0 VDS - Volts VGS = 10V 15V 2.0 75 100 125 150 175 150 175 Fig. 6. Drain Current vs. Case Temperature 180 160 TJ = 175ºC External Lead Current Limit 140 1.8 120 1.6 I D - Amperes RDS(on) - Normalized 50 TJ - Degrees Centigrade Fig. 5. Normalized RDS(on) to ID = 115A vs. Drain Current 2.2 25 1.4 1.2 100 80 60 TJ = 25ºC 1.0 40 0.8 20 0 0.6 0 50 100 150 200 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 IXTA230N04T4 IXTP230N04T4 Fig. 8. Transconductance Fig. 7. Input Admittance 180 500 VDS = 10V 160 450 TJ = - 40ºC 400 140 350 g f s - Siemens 120 I D - Amperes VDS = 10V 100 80 TJ = 150ºC 25ºC 60 25ºC 300 250 150ºC 200 150 - 40ºC 40 100 20 50 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 20 40 60 VGS - Volts 100 120 140 160 180 200 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 300 10 VDS = 20V 9 250 I D = 115A 8 I G = 10mA 7 V GS - Volts 200 I S - Amperes 80 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 1.5 20 40 60 80 100 120 140 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 10,000 RDS(on) Limit 100µs 100 I D - Amperes Capacitance - PicoFarads Ciss Coss 1,000 Crss External Lead Current Limit 10 TJ = 175ºC TC = 25ºC f = 1 MHz Single Pulse DC 1 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 1ms 10ms 100 IXTA230N04T4 IXTP230N04T4 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 200 200 RG = 10Ω , VGS = 10V RG = 10Ω , VGS = 10V VDS = 20V VDS = 20V 180 t r - Nanoseconds t r - Nanoseconds 180 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current I D = 230A 160 140 I D = 115A 160 TJ = 25ºC 140 120 TJ = 150ºC 120 100 100 25 50 75 100 125 150 110 130 150 170 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 1000 tr 900 300 td(on) 140 VDS = 20V 180 I D = 115A 150 400 120 I D = 230A 90 200 60 100 30 130 td(off) 120 RG = 10Ω, VGS = 10V VDS = 20V 100 t f - Nanoseconds 600 300 230 110 I D = 115A 80 100 60 90 40 80 I D = 230A 20 0 110 20 30 40 50 60 70 25 80 50 75 100 125 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf 105 td(off) 600 140 tf 130 500 RG = 10Ω, VGS = 10V 100 85 90 80 80 TJ = 25ºC 75 t f - Nanoseconds TJ = 150ºC 90 td(off) 550 VDS = 20V t d(off) - Nanoseconds 110 650 TJ = 150ºC, VGS = 10V 120 95 60 150 400 450 I D = 230A I D = 115A 300 350 200 250 100 150 70 70 110 130 150 170 190 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 210 60 230 0 50 10 20 30 RG - Ohms 40 50 60 t d(off) - Nanoseconds VDS = 20V 100 t f - Nanoseconds 70 0 0 10 t d(off) - Nanoseconds 210 t d(on) - Nanoseconds t r - Nanoseconds tf 120 240 700 500 210 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 270 TJ = 150ºC, VGS = 10V 800 190 I D - Amperes IXTA230N04T4 IXTP230N04T4 Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_230N04T4 (T4-M04) 5-29-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.