IXTA230N075T2-7

Preliminary Technical Information TrenchT2TM Power MOSFET IXTA230N075T2-7 VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 75 V VGSM Transient ± 20 V ID25 TC = 25°C 230 A ILRMS Lead Current Limit, RMS 160 A IDM TC = 25°C, pulse width limited by TJM 700 A IA TC = 25°C 115 A EAS TC = 25°C 850 mJ PD TC = 25°C 480 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 3 g TJ TL Tsold 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Weight TO-263 1 7 (TAB) Pins: 1 - Gate 2, 3 - Source 5,6,7 - Source TAB (8) - Drain Features z z z z z International standard package 175°C Operating Temperature High current handling capability Avalanche rated Low RDS(on) Advantages z z z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 75 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) Easy to mount Space savings High power density V 4.0 V Applications z ±200 nA μA z 150 μA z 5 TJ = 150°C VGS = 10V, ID = 50A, Notes 1, 2 © 2008 IXYS CORPORATION, All rights reserved 4.2 mΩ z Automotive - Motor Drives - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS100070(11/08) IXTA230N075T2-7 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 50 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-263 (7-lead) (IXTA..7) Outline 85 S 10.5 nF 1165 pF 125 pF 23 ns 18 ns 33 ns 15 ns 178 nC 53 nC 41 nC 0.31 °C/W RthJC Pins: 1 - Gate 2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 230 A ISM Repetitive, Pulse width limited by TJM 900 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr IF = 115A, VGS = 0V IRM QRM 66 -di/dt = 100A/μs VR = 37V ns 4.4 A 145 nC Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA230N075T2-7 Fig. 1. Output Characteristics @ 25ºC 240 VGS = 15V 10V 9V 220 200 320 VGS = 15V 10V 9V 280 180 8V 140 7V 120 100 80 6V 60 200 7V 160 120 6V 80 40 40 5V 20 8V 240 160 ID - Amperes ID - Amperes Fig. 2. Extended Output Characteristics @ 25ºC 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 1.0 0.5 1.0 1.5 240 2.4 3.5 4.0 4.5 VGS = 10V 2.2 RDS(on) - Normalized ID - Amperes 180 3.0 2.6 VGS = 15V 10V 9V 8V 200 2.5 Fig. 4. RDS(on) Normalized to ID = 115A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 220 2.0 VDS - Volts VDS - Volts 160 7V 140 120 100 6V 80 60 2.0 I D = 230A 1.8 1.6 I D = 115A 1.4 1.2 1.0 0.8 40 0.6 5V 20 0 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 115A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.6 180 2.4 160 External Lead Current Limit 140 TJ = 175ºC 2.0 ID - Amperes RDS(on) - Normalized 2.2 1.8 VGS = 10V 1.6 15V - - - - 1.4 120 100 80 60 1.2 40 1.0 TJ = 25ºC 0.8 20 0 0.6 0 50 100 150 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 200 IXTA230N075T2-7 Fig. 7. Input Admittance Fig. 8. Transconductance 160 140 140 120 TJ = - 40ºC 100 25ºC 100 TJ = 150ºC 25ºC - 40ºC g f s - Siemens ID - Amperes 120 80 60 150ºC 80 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 60 VGS - Volts 300 270 9 240 8 210 7 180 6 150 120 TJ = 150ºC 120 140 160 VDS = 38V I D = 115A I G = 10mA 5 4 3 TJ = 25ºC 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 60 80 100 120 140 160 180 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 f = 1 MHz RDS(on) Limit Ciss 25µs 10,000 100 100µs ID - Amperes Capacitance - PicoFarads 100 Fig. 10. Gate Charge 10 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 90 80 ID - Amperes Coss 1,000 External Lead Current Limit 1ms 10 10ms Crss DC 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100ms 100 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_230N075T2(V6)11-10-08-A IXTA230N075T2-7 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 22 26 24 21 VGS = 10V 20 VDS = 38V I 20 D = 230A 18 16 I D RG = 2Ω VGS = 10V VDS = 38V 19 t r - Nanoseconds 22 t r - Nanoseconds RG = 2Ω = 115A TJ = 25ºC 18 17 16 15 14 13 14 TJ = 125ºC 12 12 11 10 110 10 25 35 45 55 65 75 85 95 105 115 125 120 130 140 150 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance TJ = 125ºC, VGS = 10V I D = 230A, 115A VDS = 38V 40 tf 26 RG = 2Ω, VGS = 10V 45 25 15 20 10 15 12 5 10 10 40 18 35 16 30 14 25 I D = 230A 25 16 35 45 45 18 40 16 35 14 30 t f - Nanoseconds t f - Nanoseconds 95 105 115 15 125 240 TJ = 125ºC, VGS = 10V VDS = 38V 200 160 200 160 I D = 115A 120 120 80 25 40 10 20 110 120 130 140 150 160 170 180 190 200 210 220 230 0 TJ = 25ºC td(off) - - - - 80 I D 40 = 230A 0 2 4 6 8 10 RG - Ohms 12 14 16 t d(off) - Nanoseconds TJ = 125ºC © 2008 IXYS CORPORATION, All rights reserved 85 280 tf 240 t d(off) - Nanoseconds 50 ID - Amperes 75 280 55 RG = 2Ω, VGS = 10V VDS = 38V 12 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 60 td(off) - - - - 20 55 20 TJ - Degrees Centigrade 26 22 50 45 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 24 55 I D = 115A RG - Ohms tf 60 VDS = 38V 20 20 14 td(off) - - - - 22 30 12 230 65 24 25 10 220 t d(off) - Nanoseconds 35 8 210 28 30 6 200 50 40 4 190 30 35 2 180 55 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - t f - Nanoseconds 45 170 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 50 tr 160 ID - Amperes IXTA230N075T2-7 Fig. 19. Maximum Transient Thermal Impedance 1.00 Z (th )JC - ºC / W 0.10 0.01 0.00 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_230N075T2(V6)11-10-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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