IXTA230N075T2

IXTA230N075T2 IXTP230N075T2 TrenchT2TM Power MOSFET VDSS ID25 = =  RDS(on) N-Channel Enhancement Mode Avalanche Rated 75V 230A  4.2m TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 75 V VDGR TJ = 25C to 175C, RGS = 1M 75 V VGSM Transient 20 V ID25 IL(RMS) IDM TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 230 120 700 A A A IA TC = 25C 115 A EAS TC = 25C 850 mJ PD TC = 25C 480 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Md Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 2.5 3.0 g g G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier 175°C Operating Temperature High Current Handling Capability ROHS Compliant High Performance Trench Technology for extremely low RDS(on)        Advantages High Power Density Easy to Mount Space Savings   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 75 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V Applications 4.0 V             200 nA 5 A TJ = 150C RDS(on)  VGS = 10V, ID = 50A, Notes 1 & 2 150 A 4.2 m Automotive Engine Control Synchronous Buck Converter (for Notebook SystemPower & General Purpose Point & Load)  DC/DC Converters  High Current Switching Applications  Power Train Management  Distributed Power Architecture   © 2018 IXYS CORPORATION, All Rights Reserved DS100042A(7/18) IXTA230N075T2 IXTP230N075T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 50 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 115A RG = 2 (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 115A Qgd E 85 S 10.5 nF 1165 pF 125 pF 23 ns 18 ns 33 ns 15 ns 178 nC 53 nC 41 nC C2 A E1 L1 D1 D 1 2 L2 3 A1 b b2 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 60.12 [3.0] 0.10 [2.5] 0.06 [1.6] 0.31 C/W RthJC RthCS TO-263 Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 230 A ISM Repetitive, Pulse Width Limited by TJM 900 A VSD trr IRM QRM IF = 100A, VGS = 0V, Note 1 1.3 IF = 115A, VGS = 0V, -di/dt = 100A/s, VR = 37V TO-220 Outline E A oP A1 V 60 ns 4.4 A 145 nC H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L ee Notes: 1. Pulse test, t  300s; duty cycle, d  2%. 3X b c e1 e1 3X b2 1 - Gate 2,4 - Drain 3 - Source 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA230N075T2 IXTP230N075T2 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 240 320 VGS = 15V 10V 9V 200 VGS = 15V 10V 9V 280 8V 8V 240 7V I D - Amperes I D - Amperes 160 120 6V 80 200 7V 160 120 6V 80 40 40 5V 0 5V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.0 0.5 1.0 1.5 2.5 3.0 3.5 4.0 4.5 Fig. 4. RDS(on) Normalized to ID = 115A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 2.6 240 VGS = 15V 10V 9V 8V 2.4 VGS = 10V 2.2 RDS(on) - Normalized 200 160 I D - Amperes 2.0 VDS - Volts VDS - Volts 7V 120 6V 80 2.0 1.8 I D = 230A 1.6 I D = 115A 1.4 1.2 1.0 0.8 40 0.6 5V 0 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 115A Value vs. Drain Current 2.6 25 Fig. 6. Drain Current vs. Case Temperature 140 2.4 120 External Lead Current Limit 2.2 2.0 100 I D - Amperes RDS(on) - Normalized o TJ = 175 C 1.8 VGS = 10V 15V 1.6 1.4 1.2 80 60 40 1.0 20 o TJ = 25 C 0.8 0 0.6 0 50 100 150 200 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA230N075T2 IXTP230N075T2 Fig. 8. Transconductance Fig. 7. Input Admittance 160 140 140 120 o TJ = - 40 C 120 100 o 25 C o - 40 C 80 60 o 100 25 C 80 150 C g f s - Siemens I D - Amperes o TJ = 150 C o 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 60 100 120 140 160 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 10 270 9 240 8 210 7 180 6 V GS - Volts I S - Amperes 80 I D - Amperes VGS - Volts 150 120 VDS = 38V I D = 115A I G = 10mA 5 4 o TJ = 150 C 90 3 60 2 o TJ = 25 C 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 Fig. 11. Capacitance 80 100 120 140 160 180 Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 RDS(on) Limit f = 1 MHz C iss 25μs 10,000 100 100μs I D - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs VSD - Volts C oss 1,000 Lead Current Limit 1ms 10 10ms Crss DC 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100ms 100 IXTA230N075T2 IXTP230N075T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 22 26 RG = 2Ω , VGS = 10V RG = 2Ω , VGS = 10V 24 VDS = 38V 20 VDS = 38V 20 t r - Nanoseconds t r - Nanoseconds 22 I D = 230A 18 16 I D = 115A 18 o TJ = 25 C 16 14 14 o TJ = 125 C 12 12 10 10 25 35 45 55 65 75 85 95 105 115 110 125 120 130 140 150 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr td(on) o TJ = 125 C, VGS = 10V 40 tf 26 RG = 2Ω, VGS = 10V 30 20 25 15 20 10 15 12 5 10 10 12 14 t f - Nanoseconds 25 10 I D = 115A 20 40 18 35 16 30 20 25 60 280 55 240 35 45 55 o TJ = 125 C 45 18 40 16 35 14 30 o TJ = 25 C 12 10 140 150 160 170 180 190 200 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 210 220 25 20 230 t f - Nanoseconds 20 130 65 75 85 95 105 115 15 125 280 tf td(off) 240 o TJ = 125 C, VGS = 10V VDS = 38V 200 200 I D = 115A 160 160 120 120 80 80 40 40 I D = 230A 0 0 2 4 6 8 10 RG - Ohms 12 14 16 t d(off) - Nanoseconds 50 t d(off) - Nanoseconds t f - Nanoseconds td(off) VDS = 38V 120 25 I D = 230A Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 2Ω, VGS = 10V 110 50 TJ - Degrees Centigrade 26 22 55 45 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 24 230 60 22 14 16 td(off) VDS = 38V RG - Ohms tf 220 65 24 35 8 210 t d(off) - Nanoseconds t d(on) - Nanoseconds t r - Nanoseconds 28 30 6 200 50 40 4 190 30 35 2 180 55 45 I D = 230A, 115A VDS = 38V 170 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 50 45 160 I D - Amperes IXTA230N075T2 IXTP230N075T2 Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_230N075T2 (V6) 7-10-18-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.