IXTA24P085T

TrenchPTM Power MOSFETs IXTA24P085T IXTP24P085T VDSS ID25 = = ≤ RDS(on) - 85V - 24A Ω 65mΩ P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 85 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 85 V VGSS Continuous ±15 V VGSM Transient ±25 V ID25 TC = 25°C - 24 A IDM TC = 25°C, Pulse Width Limited by TJM - 80 A IA EAS TC = 25°C TC = 25°C - 24 200 A mJ PD TC = 25°C 83 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 3.0 2.5 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-220 TO-263 D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG z Advantages z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250μA - 85 VGS(th) VDS = VGS, ID = - 250μA - 2.5 IGSS Applications V z z V z VGS = ±15V, VDS = 0V ±50 nA z IDSS VDS = VDSS, VGS = 0V - 3 μA -100 μA RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 TJ = 125°C © 2013 IXYS CORPORATION, All Rights Reserved - 4.5 Easy to Mount Space Savings High Power Density z z High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications 65 mΩ DS99969B(01/13) IXTA24P085T IXTP24P085T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 10 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10Ω (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 16 S 2090 pF 243 pF 117 pF 18 ns 26 ns 53 ns 26 ns 41 nC 17 nC 11 nC Pins: 1 - Gate 2,4 - Drain 3 - Source 1.5 °C/W RthJC RthCS TO-263 Outline TO-220 0.50 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 24 A ISM Repetitive, Pulse Width Limited by TJM - 96 A VSD IF = - 24A, VGS = 0V, Note 1 -1.5 V trr QRM IRM IF = -12A, -di/dt = -100A/μs VR = - 43V, VGS = 0V Note 40 72 - 3.6 TO-220 Outline ns nC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA24P085T IXTP24P085T Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC -24 -100 VGS = -10V - 9V - 8V -20 -70 - 7V ID - Amperes ID - Amperes - 9V -80 -16 -12 - 6V -8 - 8V -60 - 7V -50 -40 - 6V -30 -20 -4 - 5V - 5V -10 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 0 -1.6 -2 -4 -6 -8 -10 -12 -14 -16 -18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = -12A Value vs. Junction Temperature -20 1.8 -24 VGS = -10V - 9V - 8V VGS = -10V 1.6 R DS(on) - Normalized -20 ID - Amperes VGS = -10V -90 - 7V -16 - 6V -12 -8 I D = - 24A 1.4 I D = -12A 1.2 1.0 - 5V 0.8 -4 0.6 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -50 -2.4 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = -12A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature -28 2.6 VGS = -10V 2.4 -24 2.2 TJ = 125ºC -20 2.0 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 TJ = 25ºC 1.4 -16 -12 -8 1.2 -4 1.0 0 0.8 0 -12 -24 -36 -48 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -60 -72 -84 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA24P085T IXTP24P085T Fig. 7. Input Admittance Fig. 8. Transconductance 28 -36 -32 24 TJ = - 40ºC -28 20 TJ = 125ºC 25ºC - 40ºC -20 g f s - Siemens ID - Amperes -24 -16 -12 25ºC 16 125ºC 12 8 -8 4 -4 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 0 -4 -8 -12 -16 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -24 -28 -32 -36 -40 Fig. 10. Gate Charge -70 -10 VDS = - 43V -9 -60 I D = -12A -8 -50 I G = -1mA -7 VGS - Volts IS - Amperes -20 ID - Amperes -40 -30 TJ = 125ºC -5 -4 -3 TJ = 25ºC -20 -6 -2 -10 -1 0 -0.4 0 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 0 -1.4 5 10 15 VSD - Volts 20 25 30 35 40 45 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100µs - 100 10,000 25µs 1ms RDS(on) Limit f = 1 MHz Ciss ID - Amperes Capacitance - PicoFarads 10ms 100ms 1,000 - 10 Coss TJ = 150ºC TC = 25ºC Single Pulse Crss 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 -1 - 10 VDS - Volts - 100 IXTA24P085T IXTP24P085T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 29 30 RG = 10Ω, VGS = -10V 29 TJ = 125ºC 28 VDS = - 43V 27 I t r - Nanoseconds t r - Nanoseconds 28 D = -12A 26 25 27 RG = 10Ω, VGS = -10V VDS = - 43V 26 TJ = 25ºC 25 24 I D = - 24A 24 23 23 22 25 35 45 55 65 75 85 95 105 115 -12 125 -13 -14 -15 -16 -17 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance td(on) - - - - t r - Nanoseconds I D = - 24A, -12A 60 20 40 18 20 0 12 14 16 18 20 22 24 26 28 30 32 28 tf 27 VDS = - 43V 26 23 14 22 100 54 90 34 35 45 55 65 75 85 95 105 115 30 125 42 25 38 24 34 TJ = 125ºC, 25ºC 23 22 -19 -20 -21 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -22 -23 -24 110 tf td(off) - - - - 100 TJ = 125ºC, VGS = -10V 80 t f - Nanoseconds 26 -18 38 I D = - 24A 90 VDS = - 43V 70 80 60 70 I D = -12A, - 24A 50 60 40 50 30 40 30 20 30 26 10 20 10 12 14 16 18 20 22 24 RG - Ohms 26 28 30 32 34 t d(off) - Nanoseconds 50 46 -17 46 42 25 58 27 -16 50 I D = -12A 24 16 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - VDS = - 43V -15 54 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 10Ω, VGS = - 10V -14 -24 TJ - Degrees Centigrade tf -13 td(off) - - - - 25 34 30 -12 -23 RG = 10Ω, VGS = -10V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 28 -22 58 RG - Ohms 29 -21 t d(off) - Nanoseconds 22 t d(on) - Nanoseconds VDS = - 43V 80 t f - Nanoseconds 24 TJ = 125ºC, VGS = -10V 10 -20 29 26 tr -19 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 120 100 -18 ID - Amperes IXTA24P085T IXTP24P085T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 10 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_24P085T(A1)11-05-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.