IXTA260N055T2-7

Preliminary Technical Information TrenchT2TM Power MOSFET IXTA260N055T2-7 VDSS ID25 = 55V = 260A Ω ≤ 3.3mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 55 V VGSM Transient ± 20 V ID25 TC = 25°C 260 A ILRMS Lead Current Limit, RMS 160 A IDM TC = 25°C, pulse width limited by TJM 780 A IA TC = 25°C 100 A EAS TC = 25°C 600 mJ PD TC = 25°C 480 W -55 ... +175 °C TJ TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 3 g TL Tsold 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Weight 1 7 (TAB) Pins: 1 - Gate 2, 3 - Source 5,6,7 - Source TAB (8) - Drain Features z z z z z International standard package 175°C Operating Temperature High current handling capability Avalanche rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 55 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) TJ = 150°C VGS = 10V, ID = 50A, Notes 1, 2 z z V 4.0 V ±200 nA 5 μA 150 μA 3.3 mΩ pplications z z z z © 2008 IXYS CORPORATION, All rights reserved Easy to mount Space savings High power density Automotive - Motor Drives - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS100071(11/08) IXTA260N055T2-7 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 55 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 2Ω (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-263 (7-lead) (IXTA..7) Outline 94 S 10.8 nF 1460 pF 215 pF 20 ns 27 ns 36 ns 24 ns 140 nC 52 nC 32 nC 0.31 °C/W RthJC Pins: 1 - Gate 2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse width limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IRM QRM 260 A 1000 A 1.3 V 60 IF = 130A, VGS = 0V -di/dt = 100A/μs VR = 27V ns 3.4 A 102 nC Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA260N055T2-7 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 260 VGS = 15V 10V 9V 8V 240 220 200 8V 250 ID - Amperes 180 ID - Amperes VGS = 15V 10V 9V 300 160 140 7V 120 100 80 40 7V 150 6V 100 6V 60 200 50 5V 5V 20 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.9 0.4 0.8 1.2 Fig. 3. Output Characteristics @ 150ºC 2.4 2.8 3.2 3.6 2.2 VGS = 15V 10V 9V 8V 240 220 200 VGS = 10V 2.0 RDS(on) - Normalized 1.8 180 ID - Amperes 2.0 Fig. 4. RDS(on) Normalized to ID = 130A Value vs. Junction Temperature 260 7V 160 140 120 100 6V 80 I D = 260A 1.6 I D = 130A 1.4 1.2 1.0 60 40 0.8 5V 20 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 130A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 180 2.2 External Lead Current Limit 2.1 160 TJ = 175ºC 2.0 140 1.9 1.8 120 1.7 ID - Amperes RDS(on) - Normalized 1.6 VDS - Volts VDS - Volts VGS = 10V 1.6 15V - - - - 1.5 1.4 1.3 100 80 60 1.2 TJ = 25ºC 1.1 40 1.0 20 0.9 0 0.8 0 50 100 150 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 200 IXTA260N055T2-7 Fig. 7. Input Admittance Fig. 8. Transconductance 200 140 TJ = - 40ºC 180 120 25ºC 160 100 g f s - Siemens ID - Amperes 140 120 100 TJ = 150ºC 25ºC - 40ºC 80 60 150ºC 80 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 80 VGS - Volts 100 120 140 160 180 200 220 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 360 VDS = 28V 9 320 I D = 130A 8 280 I G = 10mA 6 VGS - Volts IS - Amperes 7 240 200 160 5 4 TJ = 150ºC 120 3 80 TJ = 25ºC 2 40 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 10 20 30 Fig. 11. Capacitance 50 60 70 80 90 100 110 120 130 140 Fig. 12. Forward-Bias Safe Operating Area 1,000 100,000 RDS(on) Limit f = 1 MHz 25µs Ciss 10,000 I D - Amperes Capacitance - PicoFarads 40 QG - NanoCoulombs VSD - Volts Coss 1,000 100µs 100 External Lead Current Limit 1ms 10 TJ = 175ºC Crss 10ms 100ms TC = 25ºC Single Pulse 100 DC 1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_260N055T2(V6)11-10-08-A IXTA260N055T2-7 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 260 VGS = 15V 10V 9V 8V 240 220 200 8V 250 ID - Amperes 180 ID - Amperes VGS = 15V 10V 9V 300 160 140 7V 120 100 80 40 7V 150 6V 100 6V 60 200 50 5V 5V 20 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.9 0.4 0.8 1.2 Fig. 3. Output Characteristics @ 150ºC 2.4 2.8 3.2 3.6 2.2 VGS = 15V 10V 9V 8V 240 220 200 VGS = 10V 2.0 RDS(on) - Normalized 1.8 180 ID - Amperes 2.0 Fig. 4. RDS(on) Normalized to ID = 130A Value vs. Junction Temperature 260 7V 160 140 120 100 6V 80 I D = 260A 1.6 I D = 130A 1.4 1.2 1.0 60 40 0.8 5V 20 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 130A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 90 2.2 2.1 TJ = 175ºC 2.0 External Lead Current Limit 80 1.9 70 1.8 1.7 ID - Amperes RDS(on) - Normalized 1.6 VDS - Volts VDS - Volts VGS = 10V 1.6 15V - - - - 1.5 1.4 1.3 60 50 40 30 1.2 TJ = 25ºC 1.1 20 1.0 10 0.9 0 0.8 0 50 100 150 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 200 IXTA260N055T2-7 Fig. 19. Maximum Transient Thermal Impedance 1.000 Z (th )J C - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_260N055T2(V6)11-10-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.