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IXTA26P10T

IXTA26P10T

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    SOT404

  • 描述:

    MOSFET P-CH 100V 26A TO-263

  • 数据手册
  • 价格&库存
IXTA26P10T 数据手册
IXTY26P10T IXTA26P10T IXTP26P10T TrenchPTM Power MOSFET VDSS ID25 RDS(on) = =  - 100V - 26A  90m P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 100 V VDGR TJ = 25C to 150C, RGS = 1M - 100 V VGSS Continuous 15 V VGSM Transient 25 V ID25 TC = 25C - 26 A IDM TC = 25C, Pulse Width Limited by TJM - 80 A IA EAS TC = 25C TC = 25C - 26 300 A mJ PD TC = 25C 150 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 0.35 2.50 3.00 g g g G S D (Tab) TO-220 (IXTP) GD S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  International Standard Packages Avalanche Rated  Extended FBSOA  Fast Intrinsic Diode  Low RDS(ON) and QG  Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A -100 VGS(th) VDS = VGS, ID = - 250A - 2.5 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = -10V, ID = 0.5 • ID25, Note 1   V  - 4.5 V Applications 50 nA -10 A - 250 A 90 m       © 2017 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS100291B(8/17) IXTY26P10T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 10 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 17 S 3820 pF 280 pF 93 pF 20 ns 15 ns 37 ns 11 ns 52 nC 18 nC 16 nC 0.83 C/W RthJC RthCS IXTA26P10T IXTP26P10T TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 26 A ISM Repetitive, Pulse Width Limited by TJM -104 A VSD IF = IS, VGS = 0V, Note 1 -1.5 V trr QRM IRM IF = 0.5 • ID25, -di/dt = -100A/s VR = - 50V, VGS = 0V Note 1: Pulse test, t  300s, duty cycle, d  2%. 70 210 -6  ns nC A IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY26P10T o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C -28 -100 VGS = -10V - 9V -24 -80 - 8V - 9V -70 - 7V I D - Amperes I D - Amperes VGS = -10V -90 -20 -16 -12 - 6V -8 - 8V -60 -50 -40 - 7V -30 - 6V -20 - 5V -4 -10 - 4V 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 - 5V 0 0 -2.4 -5 -10 -15 -25 -30 Fig. 4. RDS(on) Normalized to ID = -13A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.0 -28 VGS = -10V - 9V - 8V VGS = -10V 1.8 -20 RDS(on) - Normalized -24 -20 VDS - Volts VDS - Volts I D - Amperes IXTA26P10T IXTP26P10T - 7V -16 - 6V -12 - 5V -8 1.6 I D = - 26A I D = -13A 1.4 1.2 1.0 0.8 -4 - 4V 0 0.6 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = -13A Value vs. Drain Current 2.6 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 6. Maximum Drain Current vs. Case Temperature -30 VGS = -10V 2.4 -25 2.2 TJ = 125 C 2.0 I D - Amperes RDS(on) - Normalized o 1.8 1.6 1.4 -20 -15 -10 o TJ = 25 C 1.2 -5 1.0 0 0.8 0 -10 -20 -30 -40 -50 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved -60 -70 -80 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY26P10T Fig. 8. Transconductance Fig. 7. Input Admittance -40 IXTA26P10T IXTP26P10T 30 o TJ = - 40 C -35 25 o TJ = 125 C o -25 25 C 20 o 25 C o - 40 C g f s - Siemens I D - Amperes -30 -20 -15 o 125 C 15 10 -10 5 -5 0 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 0 -5 -10 -15 -20 -25 -30 -35 -40 I D - Amperes VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -80 -10 -9 -70 VDS = - 50V I D = -13A I G = -1mA -8 -60 VGS - Volts I S - Amperes -7 -50 -40 -30 -5 -4 -3 o TJ = 125 C -20 -6 -2 o TJ = 25 C -10 -1 0 -0.3 0 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 0 -1.4 5 10 15 20 Fig. 11. Capacitance 10,000 25 30 35 45 50 55 Fig. 12. Forward-Bias Safe Operating Area - 100 25μs RDS(on) Limit Ciss 100μs - 10 1,000 I D - Amperes Capacitance - PicoFarads 40 QG - NanoCoulombs VSD - Volts Coss 100 1ms 10ms 100ms -1 DC C rss o TJ = 150 C o TC = 25 C Single Pulse f = 1 MHz - 0.1 10 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 - 10 - 100 VDS - Volts - 1000 IXTY26P10T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 18 18 IXTA26P10T IXTP26P10T RG = 3Ω, VGS = -10V RG = 3Ω, VGS = -10V 16 I D = -13A 15 VDS = - 50V 17 VDS = - 50V t r - Nanoseconds t r - Nanoseconds 17 I D = - 26A 14 13 16 o TJ = 25 C 15 14 o TJ = 125 C 13 12 12 25 35 45 55 65 75 85 95 105 115 125 -12 -14 -16 -18 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 50 tr td(on) tf o I D = -13A, - 26A 20 20 10 t f - Nanoseconds 25 0 6 7 8 9 10 11 12 13 14 50 11 40 10 30 20 8 25 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf 48 35 44 30 td(off) tf RG = 3Ω, VGS = -10V td(off) 70 o o o TJ = 25 C, 125 C 32 9 8 -16 -18 -20 I D - Amperes -22 © 2017 IXYS CORPORATION, All Rights Reserved -24 -26 t f - Nanoseconds 36 25 60 I D = -13A 20 50 15 28 10 24 5 40 I D = - 26A 30 20 3 4 5 6 7 8 9 10 RG - Ohms 11 12 13 14 15 t d(off) - Nanoseconds 11 t d(off) - Nanoseconds 40 -14 80 VDS = - 50V 12 10 10 125 TJ = 125 C, VGS = -10V VDS = - 50V t f - Nanoseconds 60 12 15 14 -12 td(off) RG = 3Ω, VGS = -10V 9 10 13 70 I D = -13A, - 26A 15 5 -26 t d(off) - Nanoseconds 30 4 -24 VDS = - 50V t d(on) - Nanoseconds t r - Nanoseconds 13 30 VDS = - 50V 3 -22 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 14 35 TJ = 125 C, VGS = -10V 40 -20 I D - Amperes TJ - Degrees Centigrade IXTY26P10T IXTA26P10T IXTP26P10T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 BOTTOM VIEW 4 H 0.34 [8.7] 6.50MIN A oP D1 D H E L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_26P10T(A2-P11) 10-21-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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