IXTA2N100

IXTA2N100 IXTP2N100 High Voltage MOSFET VDSS ID25 RDS(on) = 1000V = 2A ≤ 7Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 2 A IDM TC = 25°C, Pulse Width Limited by TJM 8 A IA EAS TC = 25°C TC = 25°C 2 150 A mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns PD TC = 25°C 100 W - 55 ... +150 150 - 55 ... +150 °C °C °C TJ TJM Tstg (TAB) TO-220 (IXTP) G z 300 °C TSOLD Plastic Body for 10s 260 °C z Md Mounting Torque 1.13 / 10 Nm/lb.in. z Weight TO-263 TO-220 2.5 3.0 g g z z z Applications V z VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ±20V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS = 0V 25 100 μA μΑ RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 7 Ω TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density V BVDSS 4.5 International Standard Packages Avalanche Rated Low Package Inductance (< 5nH) Fast Switching Times Advantages z Characteristic Values Min. Typ. Max. D = Drain TAB = Drain Features 1.6mm (0.062) from Case for 10s Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) (TAB) D S G = Gate S = Source TL (TO-220) S z z Switched-Mode and Resonant-Mode Power Supplies FlyBack Inverters DC Choppers DS97540B(04/09) IXTA2N100 IXTP2N100 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Characteristic Values Min. Typ. Max. 1.5 TO-220 (IXTP) Outline 2.5 S 825 58 15 pF pF pF Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 20Ω (External) 20 23 34 21 ns ns ns ns Qg(on) Qgs Qgd VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 18.0 3.7 8.2 nC nC nC RthJC RthCS (TO-220) 0.50 1.25 °C/W °C/W Pins: 1 - Gate 2 - Drain Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 2 A ISM Repetitive, pulse width limited by TJM 8 A VSD IF = 2A, VGS = 0V, Note 1 1.5 V trr IF = 2A, -di/dt = 100A/μs, VR = 100V 800 ns TO-263 (IXTA) Outline Note 1: Pulse Test, t ≤ 300 μs; Duty Cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA2N100 IXTP2N100 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 2.0 4.5 VGS = 10V 8V 7V 1.8 1.6 3.5 6V 1.2 ID - Amperes 1.4 ID - Amperes VGS = 10V 8V 7V 4.0 5V 1.0 0.8 3.0 6V 2.5 2.0 1.5 0.6 0.4 1.0 0.2 0.5 0.0 5V 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 1A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 2.0 3.0 VGS = 10V 6V 1.8 2.8 VGS = 10V 2.6 ID - Amperes 1.4 RDS(on) - Normalized 1.6 5V 1.2 1.0 0.8 0.6 2.4 2.2 I D = 2A 2.0 I D = 1A 1.8 1.6 1.4 1.2 1.0 0.4 0.8 0.2 0.6 0.0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 1A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.2 2.8 2.0 VGS = 10V 2.6 1.8 TJ = 125ºC 2.4 1.6 2.2 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.0 1.8 1.6 1.4 1.4 1.2 1.0 0.8 0.6 1.2 0.4 TJ = 25ºC 1.0 0.2 0.0 0.8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 3.5 4.0 4.5 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTA2N100 IXTP2N100 Fig. 7. Input Admittance Fig. 8. Transconductance 6.0 3.5 5.5 3.0 4.5 g f s - Siemens 2.5 ID - Amperes TJ = - 40ºC 5.0 TJ = 125ºC 25ºC - 40ºC 2.0 1.5 1.0 4.0 25ºC 3.5 125ºC 3.0 2.5 2.0 1.5 1.0 0.5 0.5 0.0 0.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.0 6.0 0.5 1.0 1.5 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 2.5 3.0 3.5 Fig. 10. Gate Charge 10 7 VDS = 500V 9 I D = 1A 6 8 5 I G = 10mA 7 VGS - Volts IS - Amperes 2.0 ID - Amperes 4 3 TJ = 125ºC 6 5 4 3 2 TJ = 25ºC 2 1 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 2 4 VSD - Volts 6 8 10 12 14 16 18 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 10.00 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 100 1.00 0.10 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_2N100(3X-G68)4-16-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.