IXTA2R4N120P

Polar TM Power MOSFET IXTA2R4N120P IXTP2R4N120P IXTH2R4N120P VDSS ID25 = 1200V = 2.4A  7.5  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 2.4 A IDM TC = 25C, Pulse Width Limited by TJM 6.0 A IA TC = 25C 2.4 A EAS TC = 25C 200 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 125 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 D (Tab) TO-220 (IXTP) G D S D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified)  Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1200 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 4.5 High Power Density Easy to Mount Space Savings Applications V DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Discharge Circiuts in Lasers, Spark Igniters, RF Generators  High Voltage Pulse Power Applications  100 nA 5 A 300 A TJ = 125C © 2018 IXYS CORPORATION, All rights reserved 6.5 7.5   DS99873B(6/18) IXTA2R4N120P IXTP2R4N120P IXTH2R4N120P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max VDS = 20V, ID = 0.5 • ID25, Note 1 1.2 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 18 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 2.0 S 1207 pF 57 pF 11 pF 22 ns 25 ns 70 ns 32 ns 37 nC 6 nC 20 nC 1.0 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 2.4 A ISM Repetitive, pulse Width Limited by TJM 7.2 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 2.4A, -di/dt = 100A/μs 920 ns VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA2R4N120P IXTP2R4N120P IXTH2R4N120P o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 3.6 2.4 VGS = 10V 7V 2 VGS = 10V 7V 3.2 1.6 2.4 6V I D - Amperes I D - Amperes 2.8 1.2 0.8 6V 2 1.6 1.2 0.8 0.4 5V 5V 0.4 0 0 0 2 4 6 8 10 12 14 16 18 0 5 10 3.2 2.4 VGS = 10V 7V RDS(on) - Normalized I D - Amperes 25 30 VGS = 10V 2.8 6V 1.6 1.2 5V 0.8 0.4 2.4 I D = 2.4A 2.0 I D = 1.2A 1.6 1.2 0.8 0 0.4 0 5 10 15 20 25 30 35 40 -50 45 -25 0 VDS - Volts 2.4 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 1.2A Value vs. Drain Current 2.6 Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 VGS = 10V 2.4 o TJ = 125 C 2.2 2.0 2.0 I D - Amperes RDS(on) - Normalized 20 Fig. 4. RDS(on) Normalized to ID = 1.2A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2 15 VDS - Volts VDS - Volts 1.8 1.6 1.4 1.6 1.2 0.8 1.2 0.4 o TJ = 25 C 1.0 0.0 0.8 0.0 0.5 1.0 1.5 2.0 I D - Amperes © 2018 IXYS CORPORATION, All rights reserved 2.5 3.0 3.5 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTA2R4N120P IXTP2R4N120P IXTH2R4N120P Fig. 7. Input Admittance Fig. 8. Transconductance 2.8 4 3.6 2.4 o TJ = - 40 C 3.2 2.8 g f s - Siemens I D - Amperes 2.0 1.6 o TJ = 125 C 1.2 o 25 C o - 40 C 0.8 o 25 C 2.4 2 o 1.6 125 C 1.2 0.8 0.4 0.4 0.0 0 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 0 6.4 0.4 0.8 1.2 VGS - Volts 1.6 2 2.4 2.8 3.2 30 35 40 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 8 10 9 7 VDS = 600V I D = 1.2A 8 6 I G = 10mA V GS - Volts I S - Amperes 7 5 4 o 3 TJ = 125 C 6 5 4 3 2 o TJ = 25 C 2 1 1 0 0 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0 5 VSD - Volts 10 15 20 25 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 10000 10 Ciss 1000 Z (th)JC - K / W Capacitance - PicoFarads f = 1 MHz Coss 100 1 0.1 10 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_2R4N120P(3C) 4-02-08-A IXTA2R4N120P IXTP2R4N120P IXTH2R4N120P TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source © 2018 IXYS CORPORATION, All rights reserved Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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