Preliminary Technical Information
TrenchT2TM
Power MOSFET
IXTA300N04T2-7
VDSS
ID25
= 40V
= 300A
Ω
≤ 2.5mΩ
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (7-lead)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 175°C
40
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
40
V
VGSM
Transient
± 20
V
ID25
TC = 25°C
300
A
ILRMS
Lead Current Limit, RMS
160
A
IDM
TC = 25°C, pulse width limited by TJM
900
A
IA
TC = 25°C
100
A
EAS
TC = 25°C
600
mJ
PD
TC = 25°C
480
W
-55 ... +175
°C
TJM
175
°C
Tstg
-55 ... +175
°C
300
260
°C
°C
3
g
TJ
TL
Tsold
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Weight
1
7
(TAB)
Pins: 1 - Gate
2, 3 - Source
5,6,7 - Source
TAB (8) - Drain
Features
z
International standard package
175°C Operating Temperature
z
Avalanche rated
z
High current handling capability
z
Low RDS(on)
z
Advantages
z
z
z
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
40
VGS(th)
VDS = VGS, ID = 250μA
2.0
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
Easy to mount
Space savings
High power density
V
Applications
4.0
V
±200
nA
• Synchronous Buck Converters
• High Current Switching Power
5 μA
TJ = 150°C
VGS = 10V, ID = 50A, Notes 1, 2
© 2008 IXYS CORPORATION, All rights reserved
150 μA
2.5 mΩ
Supplies
• Battery Powered Electric Motors
• Resonant-mode power supplies
• Electronics Ballast Application
• Class D Audio Amplifiers
DS100072(11/08)
IXTA300N04T2-7
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Characteristic Values
Min. Typ.
Max.
VDS = 10V, ID = 60A, Note 1
55
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 2Ω (External)
tf
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
TO-263 (7-lead) (IXTA..7) Outline
94
S
10.7
nF
1630
pF
263
pF
22
ns
17
ns
32
ns
13
ns
145
nC
44
nC
36
nC
0.31 °C/W
RthJC
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
IS
VGS = 0V
300
A
ISM
Repetitive, Pulse width limited by TJM
1000
A
VSD
IF = 100A, VGS = 0V, Note 1
1.3
V
trr
IF = 150A, VGS = 0V
IRM
QRM
-di/dt = 100A/μs
VR = 20V
53
ns
1.8
A
47.7
nC
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA300N04T2-7
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
300
350
VGS = 15V
10V
9V
8V
275
250
225
VGS = 15V
10V
9V
8V
300
250
ID - Amperes
ID - Amperes
200
175
150
7V
125
100
6V
7V
200
150
6V
100
75
50
50
5V
25
5V
0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0
0.7
0.4
0.8
Fig. 3. Output Characteristics
@ 150ºC
1.9
VGS = 10V
1.7
200
7V
175
150
6V
125
100
75
1.6
I D = 300A
1.5
I D = 150A
1.4
1.3
1.2
1.1
1.0
0.9
50
5V
0.8
25
0.7
0
0.6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50
-25
0
VDS - Volts
180
VGS = 10V
75
100
125
150
175
External Lead Current Limit
160
15V - - - -
1.9
140
TJ = 175ºC
1.8
120
1.7
ID - Amperes
RDS(on) - Normalized
50
Fig. 6. Drain Current vs. Case Temperature
2.2
2.0
25
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 150A Value
vs. Drain Current
2.1
2.4
1.8
RDS(on) - Normalized
ID - Amperes
225
2.0
2.0
VGS = 15V
10V
9V
8V
250
1.6
Fig. 4. RDS(on) Normalized to ID = 150A Value
vs. Junction Temperature
300
275
1.2
VDS - Volts
VDS - Volts
1.6
1.5
1.4
1.3
100
80
60
1.2
TJ = 25ºC
1.1
40
1.0
20
0.9
0.8
0
0
50
100
150
200
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
250
300
350
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
200
IXTA300N04T2-7
Fig. 8. Transconductance
180
160
160
140
140
120
120
g f s - Siemens
ID - Amperes
Fig. 7. Input Admittance
100
TJ = 150ºC
25ºC
- 40ºC
80
60
TJ = - 40ºC
25ºC
150ºC
100
80
60
40
40
20
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
20
40
60
VGS - Volts
80
100
120
140
160
180
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
320
10
VDS = 20V
9
280
I D = 150A
8
240
I G = 10mA
200
6
VGS - Volts
IS - Amperes
7
160
120
5
4
TJ = 150ºC
3
80
2
TJ = 25ºC
40
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
1.3
20
VSD - Volts
40
60
80
100
120
140
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
1,000
RDS(on) Limit
25µs
Ciss
100µs
10,000
I D - Amperes
Capacitance - PicoFarads
f = 1 MHz
Coss
1,000
100
External Lead Current Limit
1ms
10
100
0
5
10
15
20
25
10ms
100ms
TJ = 175ºC
TC = 25ºC
Single Pulse
Crss
30
35
40
VDS - Volts
DC
1
1
10
100
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_300N04T2(V6)11-10-08-A
IXTA300N04T2-7
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
40
30
28
35
VGS = 10V
24
I
D
= 200A
22
20
I
18
D
= 100A
14
VDS = 20V
30
25
20
15
16
VGS = 10V
TJ = 125ºC
VDS = 20V
26
t r - Nanoseconds
t r - Nanoseconds
RG = 2Ω
RG = 2Ω
TJ = 25ºC
10
25
35
45
55
65
75
85
95
105
115
125
40
60
80
100
TJ - Degrees Centigrade
120
td(on) - - - -
TJ = 125ºC, VGS = 10V
45
40
35
20
t f - Nanoseconds
t r - Nanoseconds
I D = 200A, 100A
25
0
6
8
40
tf
10
12
14
td(off) - - - -
35
VDS = 20V
I D = 100A
35
20
15
25
10
20
25
16
35
45
95
105
115
15
125
20
40
35
30
TJ = 25ºC
12
25
8
140
160
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
180
20
200
t f - Nanoseconds
TJ = 125ºC
24
td(off) - - - -
200
TJ = 125ºC, VGS = 10V
200
45
120
85
220
tf
225
55
50
28
100
75
180
VDS = 20V
175
160
I D = 100A, 200A
150
140
125
120
100
100
75
80
50
60
25
40
0
20
2
4
6
8
10
RG - Ohms
12
14
16
t d(off) - Nanoseconds
VDS = 20V
80
65
250
t d(off) - Nanoseconds
t f - Nanoseconds
td(off) - - - -
RG = 2Ω, VGS = 10V
60
55
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
60
tf
40
30
I D = 200A
TJ - Degrees Centigrade
40
16
40
25
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
32
45
30
RG - Ohms
36
50
RG = 2Ω, VGS = 10V
5
15
4
200
t d(off) - Nanoseconds
55
t d(on) - Nanoseconds
80
2
180
55
65
VDS = 20V
60
160
45
75
tr
140
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
100
120
ID - Amperes
IXTA300N04T2-7
Fig. 19. Maximum Transient Thermal Impedance
1.000
Z (th )J C - ºC / W
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_300N04T2(V6)11-10-08-A
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.