IXTA300N04T2

IXTA300N04T2 IXTP300N04T2 TrenchT2TM Power MOSFET VDSS ID25 = =  RDS(on) N-Channel Enhancement Mode Avalanche Rated 40V 300A  2.5m TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 40 V VDGR TJ = 25C to 175C, RGS = 1M 40 V VGSM Transient 20 V ID25 IL(RMS) IDM TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 300 120 900 A A A IA TC = 25C 100 A EAS TC = 25C 600 mJ PD TC = 25C 480 W -55 ... +175 TJ  C TJM 175  C Tstg -55 ... +175  C TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Md Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 2.5 3.0 g g G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier 175°C Operating Temperature High Current Handling Capability ROHS Compliant High Performance Trench Technology for extremely low RDS(on)        Advantages High Power Density Easy to Mount Space Savings  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 40 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 150A, Notes 1 & 2   V 4.0 V            200 nA 5 A Applications Automotive Engine Control Synchronous Buck Converter (for Notebook SystemPower & General Purpose Point & Load)  DC/DC Converters  High Current Switching Applications  Power Train Management  Distributed Power Architecture   150 A 2.5 m  © 2018 IXYS CORPORATION, All Rights Reserved DS100032A(7/18) IXTA300N04T2 IXTP300N04T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 55 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 20V, ID = 100A RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd E 94 S 10.7 nF 1630 pF 263 pF 22 ns 17 ns 32 ns 13 ns 145 nC 44 nC 36 nC C2 A E1 L1 D1 D 1 2 L2 3 A1 b b2 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 60.12 [3.0] 0.10 [2.5] 0.06 [1.6] 0.31 C/W RthJC RthCS TO-263 Outline TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD trr IRM QRM IF = 100A, VGS = 0V, Note 1 300 A 1000 A 1.1 IF = 150A, VGS = 0V, -di/dt = 100A/s, VR = 20V TO-220 Outline E A oP A1 V 53 ns 1.8 A 47.7 nC H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L ee Notes: 1. Pulse test, t  300s; duty cycle, d  2%. 3X b c e1 e1 3X b2 1 - Gate 2,4 - Drain 3 - Source 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA300N04T2 IXTP300N04T2 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 350 300 VGS = 15V 10V 9V 8V 250 VGS = 15V 10V 9V 300 8V 250 7V I D - Amperes I D - Amperes 200 150 6V 100 7V 200 150 6V 100 50 50 5V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.0 0.8 0.5 1.0 2.0 300 VGS = 15V 10V 9V 8V RDS(on) - Normalized I D - Amperes 2.5 VGS = 10V 1.8 200 7V 150 6V 100 50 5V 1.6 I D = 300A I D = 150A 1.4 1.2 1.0 0.8 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -50 1.4 -25 0 25 VDS - Volts 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 140 VGS = 10V 15V 2.0 50 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 150A Value vs. Drain Current 2.2 120 External Lead Current Limit o TJ = 175 C 1.8 100 I D - Amperes RDS(on) - Normalized 2.0 Fig. 4. RDS(on) Normalized to ID = 150A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 250 1.5 VDS - Volts VDS - Volts 1.6 1.4 80 60 40 1.2 o TJ = 25 C 20 1.0 0 0.8 0 50 100 150 200 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 200 IXTA300N04T2 IXTP300N04T2 Fig. 7. Input Admittance Fig. 8. Transconductance 180 160 160 o VDS = 10V 140 140 120 g f s - Siemens 120 I D - Amperes TJ = - 40 C VDS = 10V 100 o TJ = 150 C 80 o 25 C o - 40 C 60 o 25 C 100 o 150 C 80 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20 40 60 VGS - Volts 80 100 120 140 160 180 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 320 10 280 9 VDS = 20V I D = 150A 8 I G = 10mA 240 200 6 V GS - Volts I S - Amperes 7 160 120 5 4 o TJ = 150 C 3 80 2 o TJ = 25 C 40 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 20 40 60 80 100 120 140 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 100,000 RDS(on) Limit 25μs Ciss 100μs 10,000 - Amperes 100 External Lead Current Limit 1ms D C oss I Capacitance - PicoFarads f = 1 MHz 1,000 10 10ms 100ms o TJ = 175 C C rss DC o TC = 25 C Single Pulse 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXTA300N04T2 IXTP300N04T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 30 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 40 RG = 2Ω, VGS = 10V 28 RG = 2Ω, VGS = 10V VDS = 20V 35 TJ = 125 C t r - Nanoseconds 26 t r - Nanoseconds VDS = 20V o 24 I D = 200A 22 20 30 25 20 I D = 100A 18 o 15 16 14 TJ = 25 C 10 25 35 45 55 65 75 85 95 105 115 125 40 60 80 100 TJ - Degrees Centigrade 120 td(on) 20 t f - Nanoseconds t r - Nanoseconds 35 25 0 8 10 12 14 40 I D = 100A 25 35 20 30 I D = 200A 15 25 10 20 35 45 55 65 75 85 95 105 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf 36 td(off) 24 20 40 35 30 o TJ = 25 C 12 25 8 100 120 140 160 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 180 20 200 200 180 VDS = 20V 175 160 I D = 100A, 200A 150 140 125 120 100 100 75 80 50 60 25 40 0 20 2 4 6 8 10 RG - Ohms 12 14 16 t d(off) - Nanoseconds o TJ = 125 C t d(off) - Nanoseconds 45 td(off) o TJ = 125 C, VGS = 10V 200 28 80 tf 50 VDS = 20V 15 125 220 225 55 t f - Nanoseconds 32 115 250 RG = 2Ω, VGS = 10V t f - Nanoseconds 30 RG - Ohms 60 60 45 VDS = 20V 25 16 40 40 50 5 15 6 td(off) t d(off) - Nanoseconds 40 t d(on) - Nanoseconds 45 I D = 200A, 100A 16 tf 35 55 4 200 RG = 2Ω, VGS = 10V VDS = 20V 80 2 180 55 40 65 o TJ = 125 C, VGS = 10V 60 160 45 75 tr 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 100 120 I D - Amperes IXTA300N04T2 IXTP300N04T2 Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_300N04T2 (V6) 7-10-18-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.