IXTA380N036T4-7

Advance Technical Information IXTA380N036T4-7 TrenchT4TM Power MOSFET VDSS ID25 RDS(on) = 36V = 380A   1.0m N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) 1 7 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 36 V VDGR TJ = 25C to 175C, RGS = 1M 36 V VGSM Transient 15 V ID25 TC = 25C 380 A ILRMS Lead Current Limit, RMS 160 A IDM TC = 25C, Pulse Width Limited by TJM 830 A IA TC = 25C 190 A EAS TC = 25C 1.4 J PD TC = 25C 480 W (Tab) Pins: 1 - Gate 2, 3, 5 , 6 , 7 - Source 4 (Tab) - Drain Features  -55 ... +175  C  TJM 175  C  Tstg -55 ... +175  C  TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Mounting Force 10.65 / 2.2..14.6 N/lb 3.0 g Weight  International Standard Package 175°C Operating Temperature High Current Handling Capability Avalanche Rated Low RDS(on) Advantages    Easy to Mount Space Savings High Power Density Applications Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 36 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V 4.0 V             200 nA 10 TJ = 150C RDS(on) V • DC-DC Converts & Off-Line UPS • High Current Switching Applications • Primary-Side Switch VGS = 10V, ID = 100A, Note 1 © 2016 IXYS CORPORATION, All Rights Reserved A 750 A 1.0 m DS100727(5/16) IXTA380N036T4-7 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs VDS = 10V, ID = 60A, Note 1 105 RGi Gate Input Resistance 175 S 1.0  13.4 nF 2400 pF 1650 pF 36 ns 78 ns 125 ns 80 ns 260 nC 60 nC 92 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.31C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse width limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IF = 150A, VGS = 0V IRM QRM Note 54 -di/dt = 100A/s VR = 30V 380 A 1520 A 1.4 V ns 2.6 A 70 nC 1: Pulse test, t  300s, duty cycle, d  2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA380N036T4-7 TO-263 (7-lead) (IXTA..7) Outline A E OPTIONAL c2 L2 D1 D L 8 E1 1 2 3 4 5 6 7 L3 e L1 c b A1 0- 3 Pins: 1 - Gate 2, 3, 5 , 6 , 7 - Source 4 - Drain © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: T_380N036T4 (T6) 5-15-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.