IXTA3N120HV

High Voltage Power MOSFET VDSS ID25 IXTA3N120HV = = 1200V 3A 4.5 RDS(on)  N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V G VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 3 A IDM TC = 25C, Pulse Width Limited by TJM 12 A IA EAS TC = 25C TC = 25C 3 700 A mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 5 V/ns PD TC = 25C 200 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 2.5 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Weight S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features      High Voltage Package Fast Intrinsic Diode Avalanche Rated Molding Epoxies meet UL 94 V-0 Flammability Classification High Blocking Voltage Advantages    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1200 VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 2.5 Applications V 5.0 V 100 nA TJ = 125C © 2015 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density    High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits 25 A 1 mA 4.5  DS100524B(5/15) IXTA3N120HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 1.5 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss 2.6 S 1100 pF 110 pF 40 pF 17 ns 15 ns 32 ns 18 ns 42 nC 8 nC 21 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 4.7 (External) Qg(on) Qgs TO-263 (HV) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd PIN: 1 - Gate 2 - Source 3 - Drain 0.62 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 3 A Repetitive, Pulse Width Limited by TJM 12 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = IS, -di/dt = 100A/s, V R = 100V Note: 700 ns 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA3N120HV Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 3.0 VGS = 10V 7V VGS = 10V 7V 6 2.5 6V 5 I D - Amperes I D - Amperes 2.0 1.5 4 6V 3 1.0 2 5V 0.5 1 0.0 0 5V 0 2 4 6 8 10 12 0 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 3.0 3.0 VGS = 10V 7V VGS = 10V 2.6 6V RDS(on) - Normalized 2.5 2.0 I D - Amperes 20 VDS - Volts 1.5 5V 1.0 0.5 2.2 I D = 3A 1.8 I D = 1.5A 1.4 1.0 0.6 0.2 0.0 0 5 10 15 20 -50 25 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 3.5 2.6 VGS = 10V 2.4 3.0 TJ = 125ºC 2.5 2.0 I D - Amperes RDS(on) - Normalized 2.2 1.8 1.6 1.4 TJ = 25ºC 2.0 1.5 1.0 1.2 0.5 1.0 0.8 0.0 0 1 2 3 4 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 5 6 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA3N120HV Fig. 8. Transconductance Fig. 7. Input Admittance 7 6 TJ = - 40ºC 6 5 TJ = 125ºC 25ºC - 40ºC 5 25ºC g f s - Siemens I D - Amperes 4 3 4 125ºC 3 2 2 1 1 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 1 2 3 4 5 6 7 8 40 45 I D - Amperes VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 9 10 VDS = 600V 8 I D = 1.5A 8 7 I G = 10mA VGS - Volts I S - Amperes 6 5 4 3 6 4 TJ = 125ºC TJ = 25ºC 2 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 5 10 VSD - Volts 15 20 25 30 35 QG - NanoCoulombs Fig.12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 RDS(on) Limit 10 Ciss 1,000 ID - Amperes Capacitance - PicoFarads f = 1 MHz Coss 25µs 100µs 1ms 1 10ms 100 0.1 DC TJ = 150ºC TC = 25ºC Single Pulse Crss 10 0.01 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 VDS - Volts 10,000 IXTA3N120HV Fig. 13. Maximum Transient Thermal Impedance 0.7 Z (th)JC - ºC / W 0.6 0.5 0.4 0.3 0.2 0.1 0.001 0.01 0.1 1 Pulse Width - Second © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_3N120(4U) 5-06-15-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.