IXTA3N150HV

IXTA3N150HV High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 7.3 RDS(on)  N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M 1500 V G VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 3 A IDM TC = 25C, Pulse Width Limited by TJM 9 A IA EAS TC = 25C TC = 25C 3 250 A mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 5 V/ns PD TC = 25C 250 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 2.5 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Weight S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features      High Voltage package Fast Intrinsic Diode Avalanche Rated Molding Epoxies meet UL 94 V-0 Flammability Classification High Blocking Voltage Advantages    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 1500 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Applications V 5.0 V 100 nA TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density    High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits 10 A 100 A 7.3  DS100523B(1/18) IXTA3N150HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 2.2 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss 3.6 S 1375 pF VGS = 0V, VDS = 25V, f = 1MHz 90 pF 30 pF 19 ns 21 ns 42 ns 25 ns 38.6 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-263 (HV) Outline 6.5 nC 19.0 nC PIN: 1 - Gate 2 - Source 3 - Drain 0.50 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 3 A Repetitive, Pulse Width Limited by TJM 12 A VSD IF = IS, VGS = 0V, Note 1 1.3 V trr IF = ID = 0.5 • ID25, -di/dt = 100A/s IRM QRM Note: VR = 100V, VGS = 0V 0.9 μs 15.0 A 6.7 μC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA3N150HV Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Output Characteristics @ TJ = 125oC 4.5 3.0 VGS = 10V 7V 4.0 VGS = 10V 6V 2.5 6V 3.5 2.0 I D - Amperes I D - Amperes 3.0 2.5 5.5V 2.0 1.5 5V 1.5 1.0 1.0 5V 0.5 0.5 4V 4V 0.0 0.0 0 4 8 12 16 20 24 28 32 0 5 10 15 Fig. 3. RDS(on) Normalized to ID = 1.5A Value vs. Junction Temperature 3.0 30 40 o TJ = 125 C 2.2 I D = 3A 2.2 I D = 1.5A 1.8 1.4 1.0 2.0 1.8 1.6 1.4 o TJ = 25 C 1.2 0.6 1.0 0.2 0.8 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 TJ - Degrees Centigrade 2.0 2.5 3.0 3.5 4.0 4.5 I D - Amperes Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 3.0 3.5 VDS = 20V 3.0 2.5 2.5 2.0 I D - Amperes I D - Amperes 35 VGS = 10V 2.4 RDS(on) - Normalized RDS(on) - Normalized 25 Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current 2.6 VGS = 10V 2.6 20 VDS - Volts VDS - Volts 2.0 1.5 1.5 o TJ = 125 C o 25 C 1.0 o - 40 C 1.0 0.5 0.5 0.0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2018 IXYS CORPORATION, All Rights Reserved 100 125 150 3.2 3.6 4.0 4.4 4.8 VGS - Volts 5.2 5.6 6.0 IXTA3N150HV Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 9 7 o TJ = - 40 C 8 VDS = 20V 6 7 6 o 25 C I S - Amperes g f s - Siemens 5 4 3 o 125 C 5 4 o TJ = 125 C 3 2 o TJ = 25 C 2 1 1 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.3 3.5 0.4 0.5 0.6 Fig. 9. Gate Charge 0.8 0.9 1.0 Fig. 10. Capacitance 10,000 10 VDS = 750V f = 1 MHz I D = 1.5A 8 I G = 10mA Capacitance - PicoFarads VGS - Volts 0.7 VSD - Volts I D - Amperes 6 4 Ciss 1,000 Coss 100 2 Crss 0 10 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Maximum Transient Thermal Impedance 10 1 RDS(on) Limit 25μs 100μs I D - Amperes Z(th)JC - K / W 1 0.1 1ms 10ms 100ms 0.1 DC o TJ = 150 C o TC = 25 C Single Pulse 0.01 0.00001 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds 10 100 1,000 10,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_3N150(4N)5-02-16-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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